Ordering number : ENA2206
MCH6353
P-Channel Power MOSFET
-12V, -6.0A, 35mΩ, Single MCPH6
http://onsemi.com
Features
• On-resistance RDS(on)1=29mΩ(typ.)
• Halogen free compliance
• 1.5V drive
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
VDSS
Unit
-12
V
Gate to Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
-6.0
A
Drain Current (Pulse)
IDP
-24
A
PW≤10μs, duty cycle≤1%
2
When mounted on ceramic substrate (1500mm ×0.8mm)
Allowable Power Dissipation
PD
1.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
- 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
7022A-009
6
5
0.15
0 to 0.02
0.65
1
6
2
5
MCH6353-TL-W
MCPH6
SC-88,SC-70-6,
SOT-363
3,000
pcs. / reel
Pb-Free
and
Halogen Free
Packing Type: TL
Marking
3
0.3
0.85
0.25
2
note
3
4
NC
LOT No.
1
Shipping
LOT No.
0.07
MCH6353-TL-W
Package
4
2.1
1.6
0.25
2.0
Device
TL
1: Drain
2: Drain
3: Gate
4: Source
5: Drain
6: Drain
Electrical Connection
1, 2, 5, 6
MCPH6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
72413 TKIM TC-00002993 No.A2206-1/6
MCH6353
Electrical Characteristics at Ta = 25°C
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=-1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=-12V, VGS=0V
-12
-1
μA
V
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±1
μA
Cutoff Voltage
VGS(off)
VDS=-6V, ID=-1mA
Forward Transfer Admittance
| yfs |
VDS=-6V, ID=-3A
11
RDS(on)1
ID=-3A, VGS=-4.5V
29
Static Drain to Source On-State
RDS(on)2
ID=-1.5A, VGS=-2.5V
38
48
mΩ
Resistance
RDS(on)3
ID=-0.5A, VGS=-1.8V
52
78
mΩ
RDS(on)4
ID=-0.5A, VGS=-1.5V
70
140
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
-0.4
-1.4
V
S
35
1250
mΩ
pF
160
pF
Crss
150
pF
Turn-ON Delay Time
td(on)
8.4
ns
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=-6V, f=1MHz
48
ns
165
ns
68
ns
See specified Test Circuit.
VDS=-6V, VGS=-4.5V, ID=-6A
IS=-6A, VGS=0V
12
nC
1.7
nC
2.1
nC
-0.9
-1.2
V
Switching Time Test Circuit
No.A2206-2/6
MCH6353
No.A2206-3/6
MCH6353
No.A2206-4/6
MCH6353
Outline Drawing
Land Pattern Example
MCH6353-TL-W
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.A2206-5/6
MCH6353
Note on usage : Since the MCH6353 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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PS No.A2206-6/6