MCH6421-TL-E

MCH6421 Power MOSFET 20V, 38mΩ, 5.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V drive • High Speed Switching • ESD Diode-Protected Gate • Pb-Free and RoHS compliance • Halogen Free compliance : MCH6421-TL-W www.onsemi.com VDSS RDS(on) Max 38mΩ@ 4.5V ID Max 20V 61mΩ@ 2.5V 5.5A 99mΩ@ 1.8V ELECTRICAL CONNECTION N-Channel Typical Applications • Load Switch • Synchronous Boost Converter 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit 20 VGSS ±12 V V Drain Current (DC) ID 5.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 22 A Power Dissipation When mounted on ceramic substrate 2 (1200mm × 0.8mm) PD 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 PACKING TYPE : TL MARKING KV LOT No. VDSS Gate to Source Voltage 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain LOT No. Drain to Source Voltage 3 TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (1200mm × 0.8mm) Symbol RθJA © Semiconductor Components Industries, LLC, 2015 July 2015 - Rev. 2 Value 83.3 1 Unit °C/W Publication Order Number : MCH6421/D MCH6421 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V 20 VDS=10V, ID=1mA 0.4 VDS=10V, ID=2A 2.0 typ max Unit V 1 μA ±10 μA 1.3 V 3.8 S RDS(on)1 RDS(on)2 ID=2A, VGS=4.5V 29 38 mΩ ID=1A, VGS=2.5V 43 61 mΩ RDS(on)3 Ciss ID=0.5A, VGS=1.8V 69 99 mΩ Output Capacitance Coss VDS=10V, f=1MHz 84 pF Reverse Transfer Capacitance Crss 59 pF Turn-ON Delay Time td(on) 7.5 ns Rise Time tr 26 ns Turn-OFF Delay Time td(off) 38 ns Fall Time tf 32 ns 5.1 nC Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 410 See specified Test Circuit VDS=10V, VGS=4.5V, ID=5.5A pF 0.7 nC 1.7 nC VSD Forward Diode Voltage IS=5.5A, VGS=0V 0.8 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=2A RL=5Ω VIN D VOUT PW=10μs D.C.≤1% G P.G 50Ω S MCH6421 www.onsemi.com 2 MCH6421 www.onsemi.com 3 MCH6421 www.onsemi.com 4 MCH6421 PACKAGE DIMENSIONS unit : mm SC-88FL / MCPH6 CASE 419AS ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device Marking MCH6421-TL-E KV MCH6421-TL-W Package SC-88FL / MCPH6 (Pb-Free) SC-88FL / MCPH6 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6421 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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