MCH6431-TL-H

MCH6431 Power MOSFET 30V, 55mΩ, 5A, Single N-Channel Features www.onsemi.com VDSS • Low On-Resistance • 4V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance 30V Parameter 5A N-Channel Symbol Value 1, 2, 5, 6 Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 5 A IDP 20 A PD 1.5 W 150 °C −55 to +150 °C 3 Power Dissipation When mounted on ceramic substrate 91mΩ@ 4.5V Electrical Connection Absolute Maximum Ratings at Ta = 25°C PW≤10μs, duty cycle≤1% ID Max 109mΩ@ 4V Specifications Drain Current (Pulse) RDS(on) Max 55mΩ@ 10V 4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 2 (1200mm × 0.8mm) Junction Temperature Tj Storage Temperature Tstg Packing Type : TL Symbol Value Unit Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.8mm) ZF LOT No. Parameter LOT No. Thermal Resistance Ratings Marking TL RθJA 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : MCH6431/D MCH6431 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ Unit max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=2.5A 2.2 RDS(on)1 ID=2.5A, VGS=10V 42 RDS(on)2 ID=1.2A, VGS=4.5V 65 91 mΩ RDS(on)3 ID=1.2A, VGS=4V 78 109 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 30 V 1.2 1 μA ±10 μA 2.6 V 55 mΩ S 280 pF 60 pF Crss 30 pF Turn-ON Delay Time td(on) 5.7 ns Rise Time tr 11 ns Turn-OFF Delay Time td(off) 21 ns Fall Time tf 10 ns Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs 1.2 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=10V, f=1MHz See specified Test Circuit VDS=15V, VGS=10V, ID=5A 0.8 IS=5A, VGS=0V 0.85 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=15V 10V 0V VIN PW=10μs D.C.≤1% ID=2A RL=7.5Ω VIN VOUT D G P.G 50Ω S MCH6431 www.onsemi.com 2 MCH6431 www.onsemi.com 3 MCH6431 www.onsemi.com 4 MCH6431 Package Dimensions MCH6431-TL-H / MCH6431-TL-W MCPH6 CASE 419AS ISSUE O unit : mm 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH6431-TL-H MCH6431-TL-W Package Shipping Note MCPH6 SC-88FL,SC-70-6,SOT-363 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6431 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5