MCH6445-TL-W

Ordering number : ENA1566B MCH6445 N-Channel Power MOSFET http://onsemi.com 60V, 4A, 78mΩ, Single MCPH6 Features • 4V drive • Low ON-resistance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V V Drain Current (DC) ID 4 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 16 A Allowable Power Dissipation PD When mounted on ceramic substrate (1500mm2×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 4 0 to 0.02 1 2 0.3 0.85 1 6 2 5 3 4 ZU TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6445-TL-E MCH6445-TL-W 0.15 2.1 1.6 0.25 2.0 Electrical Connection 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 1, 2, 5, 6 3 MCPH6 4 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 March, 2014 32514HK TC-00002974/62012TKIM/D2409TKIM PE No. A1566-1/5 MCH6445 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=2A 3 RDS(on)1 RDS(on)2 ID=2A, VGS=10V ID=1A, VGS=4.5V 60 78 mW Static Drain-to-Source On-State Resistance 74 104 mW RDS(on)3 ID=1A, VGS=4V 81 114 mW Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 60 V 1.2 1 mA ±10 mA 2.6 V S 505 pF 57 pF Crss 37 pF Turn-ON Delay Time td(on) 7.3 ns Rise Time tr 9.8 ns Turn-OFF Delay Time td(off) 40 ns Fall Time tf 24 ns Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=4A IS=4A, VGS=0V 1.6 nC 2.1 nC 0.82 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=30V 10V 0V VIN ID=2A RL=15Ω PW=10ms D.C.≤1% VIN VOUT D G P.G 50Ω S MCH6445 Ordering Information Device MCH6445-TL-E MCH6445-TL-W Package MCPH6 Shipping 3,000pcs./reel memo Pb-Free Pb-Free and Halogen Free No. A1566-2/5 MCH6445 ID -- VDS V 3.5 1.5 VGS=2.5V 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 2.0 1.5 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS ID=1A 120 110 100 90 80 70 60 50 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 7 5 16 Source Current, IS -- A °C 25 5 3 2 3.5 4.0 IT13790 120 110 A =1 , ID V .0 100 A =1 , ID A V =2 .5 =4 , ID V S 0 . VG 0 =1 V GS =4 V GS 90 80 70 60 50 40 --40 --20 0 20 40 60 80 100 120 140 160 IT13792 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 7 10 5 1.0 1.2 IT13794 Ciss 5 tr 0.8 f=1MHz 7 td(on) 7 0.6 Ciss, Coss, Crss -- VDS 1000 tf 2 0.4 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 3 0.01 0.2 5 7 10 IT13793 VDD=30V VGS=10V td(off) 5 3 2 100 7 Coss 5 Crss 3 2 3 2 0.1 3.0 130 10 7 5 2 7 0.01 2.5 Ambient Temperature, Ta -- °C 3 7 2.0 140 30 20 --60 VDS=10V 1.0 1.5 RDS(on) -- Ta IT13791 | yfs | -- ID °C -25 = Ta °C 75 1.0 Gate-to-Source Voltage, VGS -- V 150 2A 130 0.5 160 Ta=25°C 140 0 IT13789 150 40 30 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2.5 Ta=7 5°C 25° C --25 °C 0 160 Forward Transfer Admittance, | yfs | -- S 3.0 0.5 170 Switching Time, SW Time -- ns 3.5 1.0 0.5 0 4.0 25°C 2.0 4.5 5°C 3.0V --25 °C 2.5 5.0 Ta= 7 3.0 ID -- VGS VDS=10V 5.5 Drain Current, ID -- A Drain Current, ID -- A 3.5 6.0 4 .5 15.0 V 10.0V 4.0 V 4 .0V 7.0V 4.5 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT13795 10 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT13796 No. A1566-3/5 MCH6445 VGS -- Qg 10 9 10 7 5 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 VDS=30V ID=4A 7 6 5 4 3 3 2 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 3 2 1 1 9 10 IT13797 10 ID=4A 0m 1m s s DC 1.0 7 5 2 0 PW≤10ms 3 2 0.1 7 5 0 ASO IDP=16A 10 op era Operation in this area is limited by RDS(on). ms 10 tio 0m s n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1500mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT15073 When mounted on ceramic substrate (1500mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15074 No. A1566-4/5 MCH6445 Outline Drawing MCH6445-TL-E, MCH6445-TL-W Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 Note on usage : Since the MCH6445 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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