MCH6613-TL-E

Ordering number : EN6920C MCH6613 Power MOSFET http://onsemi.com 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6 Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting Excellent ON-resistance characteristic 1.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions N-channel VDSS VGSS Gate to Source Voltage Drain Current (DC) Allowable Power Dissipation ID IDP PD Channel Temperature Storage Temperature Drain Current (Pulse) PW≤10μs, duty cycle≤1% P-channel Unit 30 --30 V ±10 ±10 V 0.35 --0.2 A 1.4 --0.8 When mounted on ceramic substrate (900mm2×0.8mm) 1unit A 0.8 W Tch 150 °C Tstg --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7022A-006 6 5 Package Shipping memo MCH6613-TL-E MCPH6 SC-88, SC-70-6, SOT-363 3,000 pcs./reel Pb-Free Packing Type : TL 2 TL 3 0.65 FM LOT No. 0 to 0.02 1 Marking 4 LOT No. 0.25 MCH6613-TL-E 0.15 2.1 1.6 0.25 2.0 Device 0.3 0.07 0.85 Electrical Connection 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 MCPH6 6 5 4 1 2 3 Semiconductor Components Industries, LLC, 2013 July, 2013 71013 TKIM TC-00002962/71112 TKIM/52506PE MSIM TB-00002278/52101 TSIM TA-324 No.6920-1/8 MCH6613 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) | yfs | ID=1mA, VGS=0V VDS=30V, VGS=0V 30 VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 VDS=10V, ID=80mA 150 V 1 μA ±10 μA 1.3 220 V mS RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Ω 7.0 pF 5.9 pF 2.3 pF td(on) 19 ns Rise Time tr 65 ns Turn-OFF Delay Time td(off) 155 ns Fall Time tf 120 ns Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs 0.26 nC Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=150mA, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 0.31 0.87 nC 1.2 V --1 μA ±10 μA [P-channel] Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance --30 V VDS=--30V, VGS=0V VGS=±8V, VDS=0V VGS(off) | yfs | VDS=--10V, ID=--100μA --0.4 VDS=--10V, ID=--50mA 80 RDS(on)1 ID=--50mA, VGS=--4V 8 10.4 Ω RDS(on)2 ID=--30mA, VGS=--2.5V 11 15.4 Ω RDS(on)3 ID=--1mA, VGS=--1.5V 27 54 Ciss --1.4 110 V mS Ω 7.5 pF Output Capacitance Coss 5.7 pF Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time td(on) 24 ns Rise Time tr 55 ns Turn-OFF Delay Time td(off) 120 ns Fall Time tf 130 ns Total Gate Charge Qg 1.43 nC Gate to Source Charge Qgs 0.18 nC Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--10V, ID=--100mA 0.25 IS=--100mA, VGS=0V --0.83 nC --1.2 V No.6920-2/8 MCH6613 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN ID=80mA RL=187.5Ω D VIN VOUT VIN PW=10μs D.C.≤1% G ID= --50mA RL=300Ω P.G ID -- VDS ID -- VDS --0.10 2. --3.5V V 0.10 0.08 VGS=1.5V 0.06 0.04 --4 . V .5 --2 V Drain Current, ID -- A --0.08 [Pch] --0.07 --6.0 V 2 3.0 4.0V --0.09 .0V 6.0 Drain Current, ID -- A 3.5V S [Nch] 5V 0.16 MCH6613 50Ω S 0V MCH6613 50Ω 0.12 VOUT G P.G 0.14 D VIN --3 . PW=10μs D.C.≤1% 0V --4V 0V 4V 0V VDD= --15V --2.0V --0.06 --0.05 --0.04 --0.03 VGS= --1.5V --0.02 0.02 --0.01 0 0 0.4 0.5 0.6 0.7 0.8 0.9 Drain to Source Voltage, VDS -- V °C --25 Drain Current, ID -- A °C --0.8 --1.0 --1.2 --1.4 --1.6 ID -- VGS --1.8 --2.0 IT00077 [Pch] VDS= --10V --0.16 25 °C Ta= 0.20 --0.6 --0.20 --0.18 75 Drain Current, ID -- A 0.25 --0.4 Drain to Source Voltage, VDS -- V [Nch] VDS=10V --0.2 IT00029 ID -- VGS 0.30 0 1.0 0.15 0.10 --25 °C 0.3 --0.14 25°C --0.12 C 0.2 Ta= 0.1 --0.10 75° 0 --0.08 --0.06 --0.04 0.05 --0.02 0 0 0 0.5 1.0 1.5 2.0 Gate to Source Voltage, VGS -- V 2.5 3.0 IT00030 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate to Source Voltage, VGS -- V --3.5 --4.0 IT00078 No.6920-3/8 MCH6613 RDS(on) -- VGS 10 [Nch] RDS(on) -- VGS 30 [Pch] Ta=25°C Ta=25°C Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 80mA 5 4 ID=40mA 3 2 1 0 1 2 3 4 5 6 7 8 9 IT00031 ID= --30mA --50mA 10 5 RDS(on) -- ID [Nch] 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω 5 Ta=75°C 25°C --25°C 2 1.0 0.01 2 3 5 7 0.1 2 3 Drain Current, ID -- A --25°C 2 3 5 7 2 0.1 3 Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- Ω 3 2 Ta=75°C 7 5 --25°C 3 25°C 2 1.0 0.001 2 3 5 7 0.01 Drain Current, ID -- A 2 Ta=75°C 10 7 --25°C 5 2 3 25°C 3 2 2 3 5 7 --0.1 5 IT00034 2 3 IT00080 RDS(on) -- ID [Pch] VGS= --2.5V 5 3 2 Ta=75°C 25°C 10 --25°C 7 5 3 2 2 3 5 7 --0.1 2 3 IT00081 RDS(on) -- ID [Pch] VGS= --1.5V 7 5 10 [Pch] 1000 VGS=1.5V 7 --10 VGS= --4V Drain Current, ID -- A [Nch] --9 3 1.0 --0.01 5 --8 RDS(on) -- ID IT00033 RDS(on) -- ID 100 --7 IT00079 100 Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=75°C 2 --6 7 25°C 1.0 0.01 --5 Drain Current, ID -- A [Nch] 7 3 --4 5 1.0 --0.01 5 VGS=2.5V 5 --3 Gate to Source Voltage, VGS -- V IT00032 RDS(on) -- ID 10 --2 7 7 3 --1 100 VGS=4V Static Drain to Source On-State Resistance, RDS(on) -- Ω 15 10 Gate to Source Voltage, VGS -- V 10 Static Drain to Source On-State Resistance, RDS(on) -- Ω 20 0 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω 25 5 3 2 100 7 5 Ta=75°C 3 2 10 --0.0001 --25°C 2 3 25°C 5 7 --0.001 Drain Current, ID -- A 2 3 IT00082 No.6920-4/8 MCH6613 RDS(on) -- Ta 18 Static Drain to Source On-State Resistance, RDS(on) -- Ω 6 5 V 5 =2. V GS A, V 40m =4.0 I D= , VGS A 80m I D= 4 3 2 1 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 5 25°C 25°C Ta= -75°C 2 0.1 7 5 3 2 0.01 0.01 2 3 5 7 2 0.1 3 Drain Current, ID -- A 4 --40 --20 0 20 40 60 80 100 120 140 160 IT00083 | yfs | -- ID [Pch] VDS= --10V 3 2 0.1 25°C 5°C 2 Ta= -- 7 75°C 5 3 2 0.01 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A IS -- VSD 5 3 IT00084 [Pch] VGS=0V VGS=0V 3 7 5 3 --0.1 7 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 [Nch] VDD=15V VGS=4V 3 td (off) tf 2 100 7 tr 5 3 td(on) 2 2 3 5 7 Drain Current, ID -- A 0.1 2 IT00038 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V IT00037 --1.1 IT00085 SW Time -- ID 1000 [Pch] VDD= --15V VGS= --4V 7 Switching Time, SW Time -- ns 5 --0.01 --0.5 1.2 C 0.1 --25° 75 °C 25 °C --2 5°C 2 2 25°C Source Current, IS -- A 3 Ta = Source Current, IS -- A 6 5 5 2 Switching Time, SW Time -- ns A, = -V GS 7 5 10 0.01 V 4.0 50m -I D= 8 1.0 [Nch] 7 0.01 0.5 10 IT00036 IS -- VSD 1.0 30m -I D= 5°C Forward Transfer Admittance, | yfs | -- S 7 = -V GS Ambient Temperature, Ta -- °C [Nch] VDS=10V 3 A, 12 IT00035 | yfs | -- ID 1.0 V 2.5 14 2 --60 160 [Pch] 16 Ta= 7 0 --60 RDS(on) -- Ta [Nch] Forward Transfer Admittance, | yfs | -- S Static Drain to Source On-State Resistance, RDS(on) -- Ω 7 5 3 2 tf td(off) 100 7 tr 5 td(on) 3 2 10 --0.01 2 3 5 Drain Current, ID -- A 7 --0.1 IT00086 No.6920-5/8 MCH6613 Ciss, Coss, Crss -- VDS 100 7 100 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 5 3 2 10 Ciss 7 Coss 5 3 2 10 Ciss 7 Coss 5 3 3 Crss 2 2 Crss 1.0 1.0 0 2 4 6 8 10 12 14 16 18 Drain to Source Voltage, VDS -- V --5 Gate to Source Voltage, VGS -- V 7 6 5 4 3 2 1 --20 --30 IT00087 [Pch] VDS= --10V ID= --100mA --8 --7 --6 --5 --4 --3 --2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC IT00040 ASO [Nch] 2 0.2 0 1.6 7 IDP=1.4A(PW≤10μs) 0.6 0.8 1.0 1.2 10m ID=0.35A s 3 DC 2 7 5 3 100 ms ope rat Operation in this area is limited by RDS(on). 0.1 Drain Current, ID -- A 7 ion ASO [Pch] 1m 0.01 2 1.0 3 0.8 Wh en 5 mo ms 3 ID= --0.2A 2 10 DC --0.1 0m s op era tio 7 n Operation in this area is limited by RDS(on). 5 7 2 10 2 3 5 IT02877 Drain to Source Voltage, VDS -- V PD -- Ta [Pch, Nch] 1.0 s 10 3 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm)1unit 2 1.6 IT00088 1m s 1.4 Total Gate Charge, Qg -- nC IDP= --0.8A(PW≤10μs) 5 1.0 0.4 --1.0 3 5 --25 --1 0 Drain Current, ID -- A --15 VGS -- Qg --10 --9 8 --10 Drain to Source Voltage, VDS -- V [Nch] VDS=10V ID=150mA 9 0 20 IT00039 VGS -- Qg 10 Allowable Power Dissipation, PD -- W [Pch] f=1MHz 7 5 Gate to Source Voltage, VGS -- V Ciss, Coss, Crss -- VDS [Nch] f=1MHz Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm)1unit --0.01 --1.0 2 3 5 7 --10 2 Drain to Source Voltage, VDS -- V 3 5 IT02878 un 0.6 ted on cer am ic s ub 0.4 str ate (90 0m m2 ✕0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02879 No.6920-6/8 MCH6613 Outline Drawing MCH6613-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.6920-7/8 MCH6613 Note on usage : Since the MCH6613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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