Ordering number : ENA2280A
MCH6661
N-Channel Power MOSFET
30V, 1.8A, 188mΩ, Dual MCPH6
http://onsemi.com
Features
• ON-resistance Nch : RDS(on)1=145mW (typ.)
• 4V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Value
Conditions
Unit
Drain to Source Voltage
VDSS
30
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
1.8
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
7.2
A
Power Dissipation
PD
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
0.8
W
Junction Temperature
Tj
Storage Temperature Purposes,
Tstg
Lead Temperature for Soldering Purposes,
3mm from Case for 10 Seconds
V
150
°C
--55 to +150
°C
260
°C
TL
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Symbol
Junction to Ambient
RθJA
Value
Unit
156.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
Gate to Source Leakage Current
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
Forward Transconductance
IGSS
VGS(th)
gFS
VDS=10V, ID=0.9A
1.1
RDS(on)1
RDS(on)2
ID=0.9A, VGS=10V
ID=0.5A, VGS=4.5V
145
188
mW
Static Drain to Source On-State Resistance
245
343
mW
RDS(on)3
ID=0.5A, VGS=4V
270
378
mW
Gate Threshold Voltage
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
30
V
1.2
1
mA
±10
mA
2.6
V
S
88
pF
19
pF
Crss
11
pF
Turn-ON Delay Time
td(on)
3.4
ns
Rise Time
tr
3.6
ns
Turn-OFF Delay Time
td(off)
10.5
ns
Fall Time
tf
4.0
ns
Total Gate Charge
Qg
2.0
nC
0.33
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=10V, ID=1.8A
0.29
IS=1.8A, VGS=0V
0.86
nC
1.2
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2014
January, 2014
12114HK TC-00003088/11014HK PE No. A2280-1/5
MCH6661
ID -- VDS
V
1.6
0.4
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
ID=0.5A
0.9A
350
300
250
200
150
100
50
0
2
4
6
8
10
12
14
Gate to Source Voltage, VGS -- V
2
Ta
0.1
7
5
°C
25
°C
75
3
2
3.5
4.0
IT13108
450
400
0.5A
, I D=
V
0
.
=4
VGS
0.5A
, I D=
4.5V
=
V GS
=0.9A
0.0V, I D
V GS=1
350
300
250
200
150
100
50
--40 --20
0
20
40
60
80
100
120
140
160
IT16668
IS -- VSD
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.01
7
0.001
3.0
Ambient Temperature, Ta -- °C
Forward Diode Current, IS -- A
°C
-25
=-
3
2.5
500
3
2
1.0
7
5
2.0
550
0
--60
16
VDS=10V
2
1.5
RDS(on) -- Ta
IT16667
gFS -- ID
3
1.0
600
500
400
0.5
Gate to Source Voltage, VGS -- V
Ta=25°C
450
0
IT16666
RDS(on) -- VGS
550
0
0
1.0
75°C
0.1
Ta=
--25
°C
25°C
0
600
Forward Transfer Admittance, | yfs | -- S
0.2
VGS=2.5V
Drain to Source Voltage, VDS -- V
2
3
5 7 0.01
2
3
5 7 0.1
2
3
SW Time -- ID
5
0.001
0.2
5 7 1.0
IT13111
Drain Current, ID -- A
Ciss, Coss, Crss -- pF
td(off)
10
7
tf
td(on)
tr
3
0.6
0.8
1.0
Ciss, Coss, Crss -- VDS
1.2
IT13112
f=1MHz
2
2
5
0.4
Forward Diode to Source Voltage, VSD -- V
3
VDD=15V
VGS=10V
3
Switching Time, SW Time -- ns
0.6
0.4
3.0V
0.2
0
0.8
C
0.6
1.0
25°
C
0.8
1.2
--25
°
3.5V
15.0V
1.0
1.4
Ta=
75°
C
Drain Current, ID -- A
10.0V
1.2
VDS=10V
1.8
4.0
4.5
6.0V
1.4
ID -- VGS(th)
2.0
Ta=25°C
8.0V
1.6
Drain Current, ID -- A
V
1.8
2
Ciss
100
7
5
3
Coss
2
Crss
10
7
1.0
0.1
2
3
5
7
1.0
Drain Current, ID -- A
2
3
5
IT13113
5
0
5
10
15
20
25
Drain to Source Voltage, VDS -- V
30
IT13114
No. A2280-2/5
MCH6661
VGS -- Qg
10
9
Drain Current, ID -- A
8
7
5
4
3
3
2
3
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
0.01
0.01
2.0
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5
10
2 3
Drain to Source Voltage, VDS -- V
5 7 100
IT16670
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
100
160
IT16613
RθJA -- Pulse Time
1000
Thermal Resistance, RθJA -- ºC/W
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
IT16669
PD -- Ta
1.0
1.8
s
Operation in this
area is limited by RDS(on).
0.1
7
5
1
0
0μ
ID=1.8A
1.0
7
5
2
0
10
DC
6
IDP=7.2A (PW≤10μs)
s
1m
s
m
n
s
10
io
0m erat
op
3
2
SOA
10
Gate to Source Voltage, VGS -- V
10
7
5
VDS=15V
ID=1.8A
Duty Cycle=0.5
0.2
0.1
10
1
0.1
0.05
0.02
0.01
ulse
le P
Sing
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
2
0.000001
3
5 7
2
0.00001
3
5 7
0.0001
2
3
5
7
0.001
2
3
5
7
Pulse Time, PT -- s
0.01
2
3
5 7
0,1
2
3
5
7
1.0
2
3
5 7
10
HD140108
No. A2280-3/5
MCH6661
Package Dimensions
MCH6661-TL-W
SC-88FL / MCPH6
CASE 419AS
ISSUE O
unit : mm
1:Source1
2:Gate1
3:Drain2
4:Source2
5:Gate2
6:Drain1
2.1
0.6
Recommended
Soldering Footprint
0.4
0.65 0.65
Ordering & Package Information
Device
Shipping
note
MCPH6,
SC-88,SOT-363
3,000
pcs. / reel
Pb-Free
and
Halogen Free
Electrical Connection
6
5
TL
Switching Time Test Circuit
10V
0V
4
XN
LOT No.
Package
Marking
LOT No.
MCH6661-TL-W
Packing Type:TL
VDD=15V
VIN
ID=0.8A
RL=18.6Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
1
2
3
Top view
P.G
MCH6661
50Ω
S
No. A2280-4/5
MCH6661
Note on usage : Since the MCH6661 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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PS No. A2280-5/5
