MCH6664-TL-W

Ordering number : ENA2281A MCH6664 P-Channel Power MOSFET –30V, –1.5A, 325mΩ, Dual MCPH6 http://onsemi.com Features • ON-resistance Pch : RDS(on)1=250mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS --30 Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID --1.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --6 A Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.8 W Junction Temperature Tj Storage Temperature Tstg Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds V 150 °C --55 to +150 °C 260 °C TL This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Thermal Resistance Ratings Parameter Symbol Junction to Ambient RθJA Value Unit 156.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Drain to Source Breakdown Voltage Symbol Conditions Value min. V(BR)DSS IDSS Gate to Source Leakage Current IGSS Gate Threshold Voltage Forward Transconductance VGS(th) gFS VDS=--10V, ID=--0.8A 1.3 RDS(on)1 RDS(on)2 ID=--0.8A, VGS=--10V ID=--0.4A, VGS=--4.5V 250 325 Static Drain-to-Source On-State Resistance 397 555 RDS(on)3 ID=--0.4A, VGS=--4V 458 641 Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time --30 VDS=--10V, ID=--1mA --1.2 max. Zero-Gate Voltage Drain Current Input Capacitance ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V typ. Unit V --1 mA ±10 mA --2.6 V S mW mW mW 82 pF 22 pF Crss 16 pF td(on) tr 4 ns 3.3 ns 12 ns Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--1.5A IS=--1.5A, VGS=0V 5.4 ns 2.2 nC 0.36 nC 0.49 nC --0.9 --1.5 V ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2014 January, 2014 12114HK TC-00003089/11014HK PE No. A2281-1/5 MCH6664 ID -- VDS --1.4 ID -- VGS(th) --2.0 Ta=25°C --4 .5V --4 .0V --8. 0V --6 .0V --1.6 VDS= --10V --1.8 --0.6 --3.0V --0.4 --1.2 --1.0 --0.8 --0.6 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.8A 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 Gate to Source Voltage, VGS -- V 3 2 °C -25 =Ta 1.0 7 5 25 3 C 75° °C 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A SW Time -- ID 100 5 7 --10 IT16630 5 2 td(off) 10 7 tf td(on) 5 3 tr 2 1.0 --0.01 25 500 400 300 200 100 --40 --20 0 20 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT16632 40 60 80 100 120 140 160 IT16672 IS -- VSD --10 7 5 3 2 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Forward Diode to Source Voltage, VSD -- V Ciss, Coss, Crss -- VDS --1.2 IT16631 f=1MHz 7 5 3 2 100 Ciss 7 5 3 Coss Crss 2 2 --4.0 IT16627 .4A = --0 V, I D 0 . 4 = -A VGS --0.4 I D= , V 5 . = --4 VGS 0.8A , I D= ---10.0V = V GS 600 1000 Ciss, Coss, Crss -- pF 3 --3.5 700 --0.001 VDD= --15V VGS= --10V 7 --3.0 800 --0.01 7 5 3 2 2 --2.5 Ambient Temperature, Ta -- °C Forward Diode Current, IS -- A 5 --2.0 900 IT16671 VDS= --10V 7 --1.5 RDS(on) -- Ta 0 --60 --16 gFS -- ID 10 --1.0 1000 Static Drain to Source On-State Resistance, RDS(on) -- mΩ Static Drain to Source On-State Resistance, RDS(on) -- mΩ 700 --0.5 Gate to Source Voltage, VGS -- V Ta=25°C ID= --0.4A 0 IT16626 900 800 0 --1.0 RDS(on) -- VGS 1000 Forward Transfer Admittance, | yfs | -- S --0.9 C 25°C 0 Drain to Source Voltage, VDS -- V Switching Time, SW Time -- ns --0.2 VGS= --2.5V Ta=7 5° 0 Ta =7 --0.4 --0.2 °C --25 °C --0.8 --1.4 5°C V --3.5 --25°C --1.0 Drain Current, ID -- A .0V --10 Drain Current, ID -- A --1.6 --1.2 10 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT16633 No. A2281-2/5 MCH6664 VGS -- Qg --10 Drain Current, ID -- A --5 --4 --3 --2 --1.0 7 5 3 2 --0.1 7 5 3 2 --1 0 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 3.0 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain to Source Voltage, VDS -- V 5 7--100 IT16674 When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 100 160 IT16675 RθJA -- Pulse Time 1000 Thermal Resistance, RθJA -- ºC/W Operation in this area is limited by RDS(on). IT16673 PD -- Ta 1.0 s m 10 s on 0m ati er 10 op DC --6 ID= --1.5A s 2 --7 s 0μ 3 --8 1m Gate to Source Voltage, VGS -- V --9 SOA IDP= --6A (PW≤10μs) 10 --10 7 5 VDS= --15V ID= --1.5A Duty Cycle=0.5 0.2 0.1 10 1 0.1 0.05 0.02 0.01 lse e Pu l Sing When mounted on ceramic substrate (900mm2×0.8mm) 1unit 2 0.000001 3 5 7 2 0.00001 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 Pulse Time, PT -- s 0.01 2 3 5 7 0,1 2 3 5 7 1.0 2 3 5 7 10 HD140108 No. A2281-3/5 MCH6664 Package Dimensions MCH6664-TL-W SC-88FL / MCPH6 CASE 419AS ISSUE O unit : mm 1:Source1 2:Gate1 3:Drain2 4:Source2 5:Gate2 6:Drain1 2.1 0.6 Recommended Soldering Footprint 0.4 0.65 0.65 Ordering & Package Information Shipping note MCPH6, SC-88,SOT-363 3,000 pcs. / reel Pb-Free and Halogen Free Electrical Connection 6 5 4 XR LOT No. MCH6664-TL-W Package Marking LOT No. Device Packing Type:TL TL Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --0.8A RL=18.5Ω VIN D PW=10μs D.C.≤1% VOUT G 1 2 3 P.G MCH6664 50Ω S No. A2281-4/5 MCH6664 Note on usage : Since the MCH6664 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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