MCT5201SR2M

MCT5201M, MCT5210M, MCT5211M Low Input Current Phototransistor Optocouplers Features Description ■ High CTRCE(SAT) comparable to Darlingtons The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. ■ CTR guaranteed 0°C to 70°C ■ High common mode transient rejection 5kV/µs ■ Data rates up to 150kbits/s (NRZ) ■ Underwriters Laboratory (UL) recognized, file #E90700, volume 2 ■ IEC60747-5-2 approved (ordering option V) Applications ■ CMOS to CMOS/LSTTL logic isolation The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1mA of LED input current. When an LED input current of 1.6mA is supplied data rates to 20K bits/s are possible. The MCT52XXM can easily interface LSTTL to LSTTL/ TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved. ■ LSTTL to CMOS/LSTTL logic isolation ■ RS-232 line receiver ■ Telephone ring detector ■ AC line voltage sensing ■ Switching power supply Schematic ANODE 1 CATHODE 2 3 ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 Package Outlines 6 BASE 5 COL 4 EMITTER www.fairchildsemi.com MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers September 2009 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Units TOTAL DEVICE TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL Lead Solder Temperature 260 for 10 sec °C 260 mW 3.5 mW/°C 50 mA PD Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C EMITTER IF Continuous Forward Current VR Reverse Input Voltage 6 V Forward Current - Peak (1 µs pulse, 300 pps) 3.0 A LED Power Dissipation 75 mW Derate Linearly From 25°C 1.0 mW/°C IC Continuous Collector Current 150 mA PD Detector Power Dissipation 150 mW 2.0 mW/°C IF(pk) PD DETECTOR Derate Linearly from 25°C ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 2 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Absolute Maximum Ratings Individual Component Characteristics Symbol Parameters Test Conditions Device Min. Typ.* Max. Units EMITTER VF Input Forward Voltage IF = 5mA All 1.25 ∆VF ∆TA Forward Voltage Temp. Coefficient IF = 2mA All -1.75 VR Reverse Voltage IR = 10µA All CJ Junction Capacitance VF = 0V, f = 1.0MHz All 1.5 V mV/°C 6 V 18 pF DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 All 30 100 V BVCBO Collector-Base Breakdown Voltage IC = 10µA, IF = 0 All 30 120 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IF = 0 All 5 10 V ICER Collector-Emitter Dark Current VCE = 10V, IF = 0, RBE = 1MΩ All 1 CCE Capacitance, Collector to Emitter VCE = 0, f = 1MHz All 10 pF CCB Capacitance, Collector to Base VCB = 0, f = 1MHz All 80 pF CEB Capacitance, Emitter to Base VEB = 0, f = 1MHz All 15 pF 100 nA Isolation Characteristics Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units VISO Input-Output Isolation Voltage(10) f = 60Hz, t = 1 sec. All 7500 Vac(peak) RISO Isolation Resistance(10) VI-O = 500 VDC, TA = 25°C All 1011 Ω CISO Isolation Capacitance (9) CMH Common Mode Transient VCM = 50 VP-P1, RL= 750Ω, IF = 0 Rejection – Output HIGH VCM = 50 VP-P , RL= 1KΩ, IF = 0 Common Mode Transient VCM = 50 VP-P1, RL = 750Ω, IF =1.6mA Rejection – Output LOW VCM = 50 VP-P1, RL= 1KΩ, IF = 5mA CML VI-O = 0, f = 1 MHz All 0.4 MCT5210M/11M 5000 0.6 V/µs pF 5000 V/µs MCT5201M MCT5210M/11M MCT5201M *All typical TA = 25°C ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 3 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified) Transfer Characteristics Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units DC CHARACTERISTICS CTRCE(SAT) Saturated Current Transfer Ratio(1) (Collector to Emitter) IF = 5mA, VCE = 0.4V MCT5201M 120 IF = 3.0mA, VCE = 0.4V MCT5210M 60 IF = 1.6mA, VCE = 0.4V MCT5211M 100 MCT5210M 70 MCT5211M 150 IF = 1.0mA, VCE = 0.4V CTR(CE) 75 Current Transfer Ratio IF = 3.0mA, VCE = 5.0V (Collector to Emitter)(1) I = 1.6mA, V = 5.0V F CE IF = 1.0mA, VCE = 5.0V CTR(CB) Current Transfer Ratio Collector to Base(2) Saturation Voltage % 110 IF = 5mA, VCB = 4.3V MCT5201M 0.28 IF = 3.0mA, VCE = 4.3V MCT5210M 0.2 IF = 1.6mA, VCE = 4.3V MCT5211M 0.3 IF = 1.0mA, VCE = 4.3V VCE(SAT) % % 0.25 IF = 5mA, ICE = 6mA MCT5201M 0.4 IF = 3.0mA, ICE = 1.8mA MCT5210M 0.4 IF = 1.6mA, ICE = 1.6mA MCT5211M 0.4 V AC CHARACTERISTICS TPHL Propagation Delay HIGH-to-LOW(3) RL = 330 Ω, RBE = ∞ RL = 3.3 kΩ, RBE = 39kΩ RL = 750 Ω, RBE = ∞ RL = 4.7 kΩ, RBE = 91kΩ IF = 3.0mA, VCC = 5.0V MCT5210M 10 IF = 1.6mA, VCC = 5.0V MCT5211M 14 7 15 IF = 1.0mA, RL = 1.5 kΩ, RBE = ∞ RL = 10 kΩ, RBE = 160kΩ VCC = 5.0V TPLH Propagation Delay LOW-to-HIGH(4) 17 24 IF = 5mA VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330kΩ MCT5201M 3 RL = 330 Ω, RBE = ∞ IF = 3.0mA, VCC = 5.0V MCT5210M 0.4 IF = 1.6mA, VCC = 5.0V MCT5211M 2.5 RL = 3.3 kΩ, RBE = 39kΩ RL = 750 Ω, RBE = ∞ RL = 4.7 kΩ, RBE = 91kΩ µs 30 µs 8 11 RL = 1.5 kΩ, RBE = ∞ 7 IF = 1.0mA, RL = 10 kΩ, RBE = 160kΩ VCC = 5.0V 16 IF = 5mA VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330kΩ MCT5201M 12 13 td Delay Time(5) VCE = 0.4V, RBE = 330kΩ, IF = 5mA RL = 1 kΩ, VCC = 5V MCT5201M 1.1 15 µs tr Rise Time(6) VCE = 0.4V, RBE = 330kΩ, IF = 5mA RL = 1 kΩ, VCC = 5V MCT5201M 2.5 20 µs ts Storage Time(7) VCE = 0.4V, RBE = 330 kΩ, IF = 5mA RL = 1 kΩ, VCC = 5V MCT5201M 10 13 µs tf Fall Time(8) VCE = 0.4V, RBE = 330 kΩ, IF = 5mA RL = 1 kΩ, VCC = 5V MCT5201M 16 30 µs *All typicals at TA = 25°C ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 4 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified) 2. The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent(ICB) divided by the input LED current (IF) time 100%. 3. Referring to Figure 14 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3V point on the falling edge of the output pulse. 4. Referring to Figure 14 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3V point on the rising edge of the output pulse. 5. Delay time (td) is measured from 50% of rising edge of LED current to 90% of Vo falling edge. 6. Rise time (tr) is measured from 90% to 10% of Vo falling edge. 7. Storage time (ts) is measured from 50% of falling edge of LED current to 10% of Vo rising edge. 8. Fall time (tf) is measured from 10% to 90% of Vo rising edge. 9. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected). 10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together. ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 5 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Notes: 1. DC Current Transfer Ratio (CTRCE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x 100%, at a specified voltage between the collector and emitter (VCE). As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 Ω RIO ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 6 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Safety and Insulation Ratings NORMALIZED CURRENT TRANSFER RATIO Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.6 1.4 TA = -40°C 1.2 1.0 0.8 0.1 NORMALIZED CURRENT TRANSFER RATIO TA = 25°C TA = 100°C 1 10 IF – LED FORWARD CURRENT (mA) 100 1.4 1.2 1.0 0.8 0.6 0.4 Normalized to: IF = 5mA VCE = 5V TA = 25°C 0.2 0.0 0.1 Fig. 4 Normalized Collector vs. Collector-Emitter Voltage 1.4 1.2 1.0 Normalized to: IF = 5mA VCE = 5V TA = 25°C IF = 10mA IF = 5mA 0.8 IF = 2mA 0.6 IF = 1mA 0.4 IF = 0.5mA 0.2 IF = 0.2mA 0.0 -40 -20 -20 0 20 40 60 100 10 IF = 10mA 1 IF = 5mA IF = 2mA 0.1 IF = 1mA IF = 0.5mA 0.01 IF = 0.2mA 0.0001 0.1 120 1 10 VCE – COLLECTOR-EMITTER VOLTAGE (V) Fig. 5 Normalized Collector Base Photocurrent Ratio vs. Forward Current Fig. 6 Normalized Collector-Base Current vs. Temperature 10 NORMALIZED COLLECTOR-BASE CURRENT 100 10 1 Normalized to: IF = 5mA VCB = 4.3V TA = 25°C 0.1 0.01 0.1 Normalized to: IF = 5mA VCE = 5V TA = 25°C 0.001 TA – AMBIENT TEMPERATURE (°C) NORMALIZED ICB – COLLECTOR-BASE PHOTO CURRENT 1 10 IF – FORWARD CURRENT (mA) Fig. 3 Normalized CTR vs. Temperature NORMALIZED ICE – COLLECTOR-EMITTER CURRENT VF – FORWARD VOLTAGE (V) 2.0 Fig. 2 Normalized Current Transfer Ratio vs. Forward Current 1 10 100 IF = 5mA 1 IF = 2mA 0.1 IF = 1mA IF = 0.5mA 0.01 Normalized to: IF = 0.2mA IF = 5mA VCB = 4.3V TA = 25°C 0.001 -60 -40 -20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) IF – FORWARD CURRENT (mA) ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 IF = 10mA www.fairchildsemi.com 7 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Typical Performance Curves Fig. 7 Collector-Emitter Dark Current vs. Ambient Temperature Fig. 8 Switching Time vs. Ambient Temperature 30 IF = 0mA VCE = 10V t – SWITCHING TIME (µs) ICEO – DARK CURRENT (nA) 10000 1000 100 10 1 RBE = 330kΩ 20 tf ts 10 5 0 10 20 30 40 50 60 70 80 90 TA – AMBIENT TEMPERATURE (°C) 0 -40 100 0 40 60 80 100 120 Fig. 10 Switching Time vs. Ambient Temperature 20 t – SWITCHING TIME (µs) IF = 10mA Refer to Figure 13 for switching time circuit VCC = 5V RL = 1kΩ RBE = 100kΩ 20 tf tPLH 15 10 ts 5 tr 0 -40 -20 tPHL 0 20 40 16 IF = 5mA VCC = 5V RL = 1kΩ RBE = 330kΩ Refer to Figure 13 for switching time circuit tf 12 tPLH ts 8 4 tr tPHL td td 60 80 100 0 -40 120 TA – AMBIENT TEMPERATURE (°C) -20 0 20 40 60 80 100 120 TA – AMBIENT TEMPERATURE (°C) Fig. 11 Switching Time vs. Ambient Temperature Fig. 12 Switching Time vs. Base-Emitter Resistance 20 100 IF = 5mA Refer to Figure 13 for switching time circuit VCC = 5V RL = 1kΩ RBE = 100kΩ t – SWITCHING TIME (µs) 16 20 td TA – AMBIENT TEMPERATURE (°C) 30 25 tPHL -20 Fig. 9 Switching Time vs. Ambient Temperature t – SWITCHING TIME (µs) tPLH 15 tr 0.1 t – SWITCHING TIME (µs) Refer to Figure 13 for switching time circuit IF = 10mA VCC = 5V 25 RL = 1kΩ 12 tf tPLH 8 ts 4 tr tPHL t PLH I F = 1.6mA R L = 4.7kΩ -20 0 20 40 60 80 100 tPHL, I F = 1.6mA, RL = 4.7kΩ t PHL, I F = 3mA, RL = 3.3kΩ VCC = 5V TA = 25°C 1 10 120 TA – AMBIENT TEMPERATURE (°C) ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 t PHL, I F = 1mA, RL = 10kΩ 10 td 0 -40 t PLH, I F = 1mA, RL = 10kΩ t PLH I F = 3mA R L = 3.3kΩ 100 1000 10000 RBE – BASE-EMITTER RESISTANCE (kΩ) www.fairchildsemi.com 8 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Typical Performance Curves (Continued) VCC = 5.0 V VCC = 5.0 V Pulse Gen ZO = 50Ω f = 10KHz 10% D.F. Pulse Gen ZO = 50Ω f = 10KHz 10% D.F. 1K VO 1K 4.7K D1 IF monitor VO IF monitor 330K 100 Ω D2 D3 330K 100 Ω D4 tr, tf, td, ts TEST CIRCUIT tPHL, tPLH TEST CIRCUIT Figure 13. INPUT 50% (IF) 0 td 90% OUTPUT (VO) 90% tPHL tPLH 1.3 V 10% 1.3 V 10% 0 ts tr tf Figure 14. Switching Circuit Waveforms ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 9 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Typical Electro-Optical Characteristics (TA = 25°C unless otherwise specified) Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25–0.36 3.28–3.53 5.08 (Max.) 0.38 (Min.) 0.20–0.30 2.54 (Bsc) (0.86) 0.16–0.88 (8.13) 0.41–0.51 1.02–1.78 0.76–1.14 Note: All dimensions in mm. ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 10 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Package Dimensions Option Order Entry Identifier (Example) No suffix MCT5201M S MCT5201SM SR2 MCT5201SR2M T MCT5201TM 0.4" Lead Spacing V MCT5201VM IEC60747-5-2 TV MCT5201TVM IEC60747-5-2, 0.4" Lead Spacing SV MCT5201SVM IEC60747-5-2, Surface Mount SR2V MCT5201SR2VM Description Standard Through Hole Device (50 units per tube) Surface Mount Lead Bend Surface Mount; Tape and Reel (1,000 units per reel) IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel) Marking Information 1 V 3 MCT5201 2 X YY Q 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 11 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 12 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers Carrier Tape Specification Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 www.fairchildsemi.com 13 MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.