MCT52103S

LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 Description The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. 6 6 The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1 mA of LED input current. When an LED input current of 1.6 mA is supplied data rates to 20K bits/s are possible. 1 1 The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved. 6 Features 1 • • • • • • High CTRCE(SAT) comparable to Darlingtons CTR guaranteed 0°C to 70°C High common mode transient rejection 5kV/µs Data rates up to 150 kbits/s (NRZ) Underwriters Laboratory (UL) recognized (file #E90700) VDE recognized (file #94766) – Add option 300 (e.g., MCT5211.300) SCHEMATIC ANODE 1 6 BASE Applications • • • • • • CATHODE 2 CMOS to CMOS/LSTTL logic isolation LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver Telephone ring detector AC line voltage sensing Switching power supply 5 COL 3 Parameters 4 EMITTER Symbol Device Value Units Storage Temperature TSTG All -55 to +150 °C Operating Temperature TOPR All -55 to +100 °C Lead Solder Temperature TSOL All 260 for 10 sec °C PD All 260 mW 3.5 mW/°C Continuous Forward Current IF All 50 mA Reverse Input Voltage VR All 6 V TOTAL DEVICE Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C EMITTER IF(pk) Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation PD Derate Linearly From 25°C All 3.0 A All 75 mW All 1.0 mW/°C All 150 mA All 150 mW All 2.0 mW/°C DETECTOR Continuous Collector Current IC Detector Power Dissipation PD Derate Linearly from 25°C © 2003 Fairchild Semiconductor Corporation Page 1 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameters Test Conditions Symbol Device All Min Typ** Max 1.25 1.5 Units EMITTER Input Forward Voltage (IF = 5 mA) VF Forward Voltage Temp. Coefficient (IF = 2 mA) ∆VF ∆TA All Reverse Voltage (IR = 10 µA) VR All Junction Capacitance (VF = 0 V, f = 1.0 MHz) CJ All V mV/ °C -1.75 6 V 18 pF DETECTOR Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO All 30 100 V Collector-Base Breakdown Voltage (IC = 10 µA, IF = 0) BVCBO All 30 120 V Emitter-Base Breakdown Voltage (IC = 10 µA, IF = 0) BVEBO All 5 10 V Collector-Emitter Dark Current (VCE = 10V, IF = 0, RBE = 1MΩ) ICER All 1 Capacitance Collector to Emitter (VCE = 0, f = 1 MHz) CCE All 10 pF Collector to Base (VCB = 0, f = 1 MHz) CCB All 80 pF Emitter to Base (VEB = 0, f = 1 MHz) CEB All 15 pF 100 nA ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Units Input-Output Isolation Voltage(10) (f = 60Hz, t = 1 min.) VISO All 5300 Vac(rms) Isolation Resistance(10) VI-O = 500 VDC, TA = 25°C RISO All 1011 Ω VI-O = 0, f = 1 MHz CISO Isolation Capacitance(9) Common Mode Transient VCM = 50 VP-P1, RL= 750Ω, IF = 0 Rejection – Output High VCM = 50 VP-P , RL= 1KΩ, IF = 0 Common Mode Transient VCM = 50 VP-P1, RL = 750Ω, IF =1.6mA Rejection – Output Low VCM = 50 VP-P1, RL= 1KΩ, IF = 5 mA CMH CML All MCT5210/11 MCT5200/01 MCT5210/11 MCT5200/01 0.7 pF 5000 V/µs 5000 V/µs **All typical TA=25°C © 2003 Fairchild Semiconductor Corporation Page 2 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.) DC Characteristics Test Conditions IF = 10 mA, VCE = 0.4 V IF = 5 mA, VCE = 0.4 V Saturated Current IF = 3.0 mA, VCE = 0.4 V Transfer Ratio(1) (Collector to Emitter) IF = 1.6 mA, VCE = 0.4 V IF = 1.0 mA, VCE = 0.4 V IF = 3.0 mA, VCE = 5.0 V Current Transfer Ratio I = 1.6 mA, VCE = 5.0 V (Collector to Emitter)(1) F IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCB = 4.3 V IF = 5 mA, VCB = 4.3 V Current Transfer Ratio IF = 3.0 mA, VCE = 4.3 V Collector to Base(2) IF = 1.6 mA, VCE = 4.3 V IF = 1.0 mA, VCE = 4.3 V IF = 10 mA, ICE = 7.5 mA IF = 5 mA, ICE = 6 mA Saturation Voltage IF = 3.0 mA, ICE = 1.8 mA IF = 1.6 mA, ICE = 1.6 mA AC Characteristics Propagation Delay High to Low(3) VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330 kΩ Propagation Delay Low to High(4) RL = 330 Ω, RBE = ∞ RL = 3.3 kΩ, RBE = 39 kΩ RL = 750 Ω, RBE = ∞ RL = 4.7 kΩ, RBE = 91 kΩ RL = 1.5 kΩ, RBE = ∞ RL = 10 kΩ, RBE = 160 kΩ VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330 kΩ Delay Time(5) Rise Time(6) VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V © 2003 Fairchild Semiconductor Corporation Device Min CTRCE(SAT) MCT5200 MCT5201 MCT5210 75 120 60 100 75 70 150 110 0.2 0.28 0.2 0.3 0.25 MCT5211 MCT5210 CTR(CE) CTR(CB) MCT5211 MCT5200 MCT5201 MCT5210 MCT5211 Test Conditions RL = 330 Ω, RBE = ∞ RL = 3.3 kΩ, RBE = 39 kΩ RL = 750 Ω, RBE = ∞ RL = 4.7 kΩ, RBE = 91 kΩ RL = 1.5 kΩ, RBE = ∞ RL = 10 kΩ, RBE = 160 kΩ Symbol IF = 3.0 mA VCC = 5.0 V IF = 1.6mA VCC = 5.0V IF = 1.0mA VCC = 5.0V IF = 10mA IF = 5mA IF = 3.0 mA VCC = 5.0 V IF = 1.6mA VCC = 5.0V IF = 1.0mA VCC = 5.0 V IF = 10mA IF = 5mA IF = 10mA IF = 5mA VCE(SAT) MCT5200 MCT5201 MCT5210 MCT5211 Symbol Device td IF = 10mA IF = 5mA Page 3 of 11 tr % % Typ 0.4 0.4 0.4 0.4 V Max Units MCT5201 1.1 15 MCT5200 1.3 6 MCT5201 2.5 20 MCT5210 MCT5211 Units % MCT5200 MCT5201 MCT5200 MCT5211 MCT5200 MCT5201 TPLH Max 10 7 14 15 17 24 1.6 3 0.4 8 2.5 11 7 16 18 12 0.5 MCT5210 TPHL Min Typ** µs 12 30 µs 20 13 7 µs µs 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.) (Continued) DC Characteristics Storage Time(7) Fall Time(8) Test Conditions VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V VCE = 0.4V, RBE = 330 kΩ, RL = 1 kΩ, VCC = 5V Symbol IF = 10mA IF = 5mA ts IF = 10mA IF = 5mA tf Typ** Max MCT5200 Device Min 15 18 MCT5201 10 13 MCT5200 16 30 MCT5201 16 30 Units µs µs **All typicals at TA = 25°C Notes 1. DC Current Transfer Ratio (CTRCE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x 100%, at a specified voltage between the collector and emitter (VCE). 2. The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent(ICB) divided by the input LED current (IF) time 100%. 3. Referring to Figure 14 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3V point on the falling edge of the output pulse. 4. Referring to Figure 14 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3V point on the rising edge of the output pulse. 5. Delay time (td) is measured from 50% of rising edge of LED current to 90% of Vo falling edge. 6. Rise time (tr) is measured from 90% to 10% of Vo falling edge. 7. Storage time (ts) is measured from 50% of falling edge of LED current to 10% of Vo rising edge. 8. Fall time (tf) is measured from 10% to 90% of Vo rising edge. 9. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected). 10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together. © 2003 Fairchild Semiconductor Corporation Page 4 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 TYPICAL PERFORMANCE GRAPHS 2.0 1.2 1.8 1.0 NORMALIZED CTRCE VF - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 1.6 1.4 TA = -55°C 1.2 TA = 25°C 1.0 0.8 0.6 0.4 Normalized to: IF = 5mA VCE = 5V TA = 25°C 0.2 TA = 100°C 0.8 0.1 Fig. 2 Normalized Current Transfer Ratio vs. Forward Current 0 0.1 100 1 10 IF - LED FORWARD CURRENT (mA) 1 10 IF - FORWARD CURRENT (mA) Fig. 4 Normalized Collector vs. Collector - Emitter Voltage Fig. 3 Normalized CTR vs. Temperature NORMALIZED CTRCE 1.2 10 Normalized to: IF = 5mA VCE = 5V TA = 25°C NORMALIZED ICE - COLLECTOR - EMITTER CURRENT 1.6 1.4 IF = 10mA IF = 2mA IF = 5mA 1.0 0.8 IF = 1mA 0.6 IF = 0.5 mA 0.4 IF = 0.2 mA 0.2 0.0 -60 -40 -20 0 20 40 60 80 IF = 10 mA 1 IF = 5 mA IF = 2 mA 0.1 IF = 1 mA IF = 0.5 mA 0.01 IF = 0.2 mA Normalized to: IF = 5mA : VCE = 5V TA = 25°C 0.001 0.0001 0.1 100 1 Fig. 5 Normalized Collector Base Photocurrent Ratio vs. Forward Current Fig. 6 Normalized Collector Base Current vs. Temperature 10 10 1 0.1 Normalized to: IF = 5mA VCB = 4.3V TA = 25°C 1 10 NORMALIZED - COLLECTOR BASE CURRENT 100 NORMALIZED ICB - COLLECTOR BASE PHOTO CURRENT 10 VCE - COLLECTOR - EMITTER VOLTAGE - V TA - AMBIENT TEMPERATURE - °C 0.01 0.1 100 100 IF = 5 mA 1 IF = 2 mA 0.1 IF = 1 mA IF = 0.5 mA 0.01 Normalized to: IF = 0.2 mA IF = 5mA VCB = 4.3V TA = 25°C 0.001 -60 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE - °C IF - FORWARD CURRENT - mA © 2003 Fairchild Semiconductor Corporation IF = 10 mA Page 5 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 TYPICAL PERFORMANCE GRAPHS (Continued) Fig. 7 Collector-Emitter Dark Current vs. Ambient Temperature Fig. 8 Switching Time vs. Ambient Temperature 30 IF = 0mA VCE = 10V SWITCHING TIME - t(µs) ICEO - DARK CURRENT (nA) 10000 1000 100 10 1 20 tPLH ts 15 tf 10 5 tPHL 0.1 0 10 20 30 40 50 60 70 80 90 TA - AMBIENT TEMPERATURE (°C) 0 -60 100 -40 -20 Refer to Figure 13 for switching time circuit SWITCHING TIME - t(µs) SWITCHING TIME - t(µs) 0 20 40 60 80 100 30 IF = 10mA VCC = 5V RL = 1K RBE = 100K tPLH 15 ts tf 10 5 tPHL 0 -60 -40 tr -20 td 0 20 40 60 80 25 IF = 5mA VCC = 5V RL = 1K RBE = 330K tf 15 tPLH ts 10 5 tr tPHL 0 -60 100 Refer to Figure 13 for switching time circuit 20 TA - AMBIENT TEMPERATURE (°C) -40 -20 0 td 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) Fig. 11 Switching Time vs. Ambient Temperature Fig. 12 Turn-on Time vs. Base-Emitter Resistance 100 IF = 5mA VCC = 5V RL = 1K RBE = 100K SWITCHING TIME - tPHL, tPLH (µs) 20 15 td Fig. 10 Switching Time vs. Ambient Temperature 25 20 tr TA - AMBIENT TEMPERATURE (°C) Fig. 9 Switching Time vs. Ambient Temperature SWITCHING TIME - t(µs) Refer to Figure 13 for switching time circuit IF = 10mA VCC = 5V RL = 1K RBE = 330K 25 Refer to Figure 13 for switching time circuit tPLH tf 10 ts 5 tr tPHL 0 -60 -40 -20 0 td 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) © 2003 Fairchild Semiconductor Corporation tPLH, IF=3mA, RL=3.3K tPLH, IF=1.6mA, RL=4.7K tPLH, IF=1mA, RL=10K tPHL, IF=1mA, RL=10K 10 tPHL, IF=1.6mA, RL=4.7K tPHL, IF=3mA, RL=3.3K VCC = 5V VCE = 0.4V TA = 25°C 1 10 100 1000 10000 BASE RESISTANCE - RBE (kΩ) Page 6 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 TYPICAL ELECTRO-OPTICAL CHARACTERISTICS (TA = 25°C Unless Otherwise Specified) VCC = 5.0 V VCC = 5.0 V Pulse Gen ZO = 50Ω f = 10KHz 10% D.F. 1K VO Pulse Gen ZO = 50Ω f = 10KHz 10% D.F. 1K 4.7K D1 IF monitor VO IF monitor 330K 100 Ω D2 D3 330K 100 Ω D4 tr, tf, td, ts TEST CIRCUIT tPHL, tPLH TEST CIRCUIT Figure 13. INPUT 50% (IF) 0 td 90% OUTPUT (VO) 90% tPHL tPLH 1.3 V 10% 1.3 V 10% 0 ts tr tf Figure 14. Switching Circuit Waveforms © 2003 Fairchild Semiconductor Corporation Page 7 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 Package Dimensions (Through Hole) MCT5211 Package Dimensions (Surface Mount) 0.350 (8.89) 0.330 (8.38) PIN 1 ID. 3 2 PIN 1 ID. 1 0.270 (6.86) 0.240 (6.10) SEATING PLANE 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 4 0.070 (1.78) 0.045 (1.14) 5 6 0.300 (7.62) TYP 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.115 (2.92) 0.200 (5.08) 0.165 (4.18) 0.020 (0.51) MIN 0.154 (3.90) 0.100 (2.54) 0.016 (0.41) 0.008 (0.20) 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0° to 15° 0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX 0.300 (7.62) TYP Lead Coplanarity : 0.004 (0.10) MAX 0.100 (2.54) TYP Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.070 (1.78) 0.270 (6.86) 0.240 (6.10) 0.060 (1.52) SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.415 (10.54) 0.070 (1.78) 0.045 (1.14) 0.100 (2.54) 0.295 (7.49) 0.030 (0.76) 0.200 (5.08) 0.135 (3.43) 0.154 (3.90) 0.100 (2.54) 0.004 (0.10) MIN 0.016 (0.40) 0.008 (0.20) 0° to 15° 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.400 (10.16) TYP Note All dimensions are in inches (millimeters) © 2003 Fairchild Semiconductor Corporation Page 8 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 ORDERING INFORMATION Option Order Entry Identifier Description .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and Reel W .W 0.4" Lead Spacing .300 VDE 0884 .300W VDE 0884, 0.4" Lead Spacing S 300 300W 3S 3SD .3S VDE 0884, Surface Mount .3SD VDE 0884, Surface Mount, Tape and Reel MARKING INFORMATION 1 MCT5200 2 V XX YY K 6 3 4 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code © 2003 Fairchild Semiconductor Corporation Page 9 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 Carrier Tape Specifications 12.0 ± 0.1 4.85 ± 0.20 4.0 ± 0.1 Ø1.55 ± 0.05 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 7.5 ± 0.1 13.2 ± 0.2 9.55 ± 0.20 Ø1.6 ± 0.1 10.30 ± 0.20 0.1 MAX 16.0 ± 0.3 User Direction of Feed NOTE All dimensions are in inches (millimeters) Reflow Profile (Black Package, No Suffix) Temperature (°C) 300 215°C, 10–30 s 250 225°C peak 200 150 Time above 183°C, 60–150 sec 100 50 Ramp up = 3°C/sec • Peak reflow temperature: 225°C (package surface temperature) • Time of temperature higher than 183°C for 60–150 seconds • One time soldering reflow is recommended 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) © 2003 Fairchild Semiconductor Corporation Page 10 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 11 of 11 6/10/03