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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MCT5210M, MCT5211M
6-Pin DIP Low Input Current Phototransistor Optocouplers
Features
Description
■ High CTRCE(SAT) Comparable to Darlingtons
The MCT5210M and MCT5211M devices consist of a
high-efficiency AlGaAs infrared emitting diode coupled
with an NPN phototransistor in a six-pin dual-in-line
package.
■ High Common Mode Transient Rejection: 5 kV/µs
■ Data Rates Up to 150 kbits/s (NRZ)
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■ CMOS to CMOS/LSTTL Logic Isolation
■ LSTTL to CMOS/LSTTL Logic Isolation
The devices are well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1 mA of LED input
current. With an LED input current of 1.6 mA, data rates
to 20K bits/s are possible.
Both can easily interface LSTTL to LSTTL/TTL, and with
use of an external base-to-emitter resistor data rates of
100K bits/s can be achieved.
■ RS-232 Line Receiver
■ Telephone Ring Detector
■ AC Line Voltage Sensing
■ Switching Power Supply
Schematic
ANODE 1
CATHODE 2
Package Outlines
6 BASE
5 COLLECTOR
3
4 EMITTER
Figure 2. Package Outlines
Figure 1. Schematic
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
April 2015
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Characteristics
< 150 VRMS
I–IV
< 300 VRMS
I–IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
Parameter
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥ 10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
TS
Case Temperature(1)
175
°C
IS,INPUT
Current(1)
350
mA
800
mW
Input
PS,OUTPUT Output
RIO
Power(1)
Insulation Resistance at TS, VIO =
500 V(1)
>
109
Ω
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
2
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Value
Unit
-40 to +125
°C
Operating Temperature
-40 to +100
°C
Junction Temperature
-40 to +125
ºC
260 for 10 seconds
°C
Total Device Power Dissipation @ 25°C (LED plus detector)
225
mW
Derate Linearly From 25°C
3.5
mW/°C
IF
Continuous Forward Current
50
mA
VR
Reverse Input Voltage
6
V
TOTAL DEVICE
TSTG
TOPR
TJ
TSOL
PD
Storage Temperature
Lead Solder Temperature
EMITTER
IF(pk)
PD
Forward Current – Peak (1 µs pulse, 300 pps)
3.0
A
LED Power Dissipation @ 25°C
75
mW
Derate Linearly From 25°C
1.0
mW/°C
DETECTOR
IC
PD
Continuous Collector Current
150
mA
Detector Power Dissipation @ 25°C
150
mW
Derate Linearly From 25°C
2.0
mW/°C
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
3
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Absolute Maximum Ratings
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
1.50
V
EMITTER
VF
Input Forward Voltage
IF = 5 mA
1.25
ΔVF
ΔTA
Forward Voltage Temperature
Coefficient
IF = 2 mA
-1.75
VR
Reverse Voltage
IR = 10 µA
CJ
Junction Capacitance
VF = 0 V, f = 1.0 MHz
mV/°C
6
V
18
pF
DETECTOR
BVCEO
Breakdown Voltage,
Collector-to-Emitter
IC = 1.0 mA, IF = 0
30
100
V
BVCBO
Breakdown Voltage,
Collector-to-Base
IC = 10 µA, IF = 0
30
120
V
BVEBO
Breakdown Voltage,
Emitter-to-Base
IE = 10 µA, IF = 0
5
10
V
ICER
Dark Current, Collector-to-Emitter
VCE = 10 V, IF = 0, RBE = 1 MΩ
1
100
nA
CCE
Capacitance, Collector-to-Emitter
VCE = 0, f = 1 MHz
10
pF
CCB
Capacitance, Collector-to-Base
VCB = 0, f = 1 MHz
80
pF
CEB
Capacitance, Emitter-to-Base
VEB = 0, f = 1 MHz
15
pF
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
4
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min. Typ. Max. Unit
DC CHARACTERISTICS
Saturated Current
CTRCE(SAT) Transfer Ratio
Collector-to-Emitter(2)
CTR(CE)
CTR(CB)
VCE(SAT)
IF = 3.0 mA, VCE = 0.4 V
IF = 1.6 mA, VCE = 0.4 V
IF = 1.0 mA, VCE = 0.4 V
IF = 3.0 mA, VCE = 5.0 V
Current Transfer Ratio
= 1.6 mA, VCE = 5.0 V
I
Collector-to-Emitter(2) F
IF = 1.0 mA, VCE = 5.0 V
IF = 3.0 mA, VCE = 4.3 V
Current Transfer Ratio
IF = 1.6 mA, VCE = 4.3 V
Collector-to-Base(3)
IF = 1.0 mA, VCE = 4.3 V
Saturation Voltage
MCT5210M
MCT5211M
MCT5210M
MCT5211M
MCT5210M
MCT5211M
60
%
100
%
75
%
70
%
150
%
110
%
0.2
%
0.3
%
0.25
%
IF = 3.0 mA, ICE = 1.8 mA
MCT5210M
0.4
V
IF = 1.6 mA, ICE = 1.6 mA
MCT5211M
0.4
V
AC CHARACTERISTICS
RL = 330 Ω, RBE = ∞
TPHL
Propagation Delay
HIGH-to-LOW(4)
IF = 3.0 mA,
MCT5210M
RL = 3.3 kΩ, RBE = 39 kΩ VCC = 5.0 V
10
µs
7
µs
RL = 750 Ω, RBE = ∞
14
µs
IF = 1.6 mA,
V
RL = 4.7 kΩ, RBE = 91 kΩ CC = 5.0 V
15
µs
IF = 1.0 mA,
RL = 10 kΩ, RBE = 160 kΩ VCC = 5.0 V
17
µs
24
µs
RL = 330 Ω, RBE = ∞
IF = 3.0 mA,
MCT5210M
V
RL = 3.3 kΩ, RBE = 39 kΩ CC = 5.0 V
0.4
µs
8
µs
RL = 750 Ω, RBE = ∞
2.5
µs
11
µs
7
µs
16
µs
RL = 1.5 kΩ, RBE = ∞
TPLH
Propagation Delay
LOW-to-HIGH(5)
IF = 1.6 mA,
RL = 4.7 kΩ, RBE = 91 kΩ VCC = 5.0 V
RL = 1.5 kΩ, RBE = ∞
IF = 1.0 mA,
RL = 10 kΩ, RBE = 160 kΩ VCC = 5.0 V
MCT5211M
MCT5211M
Notes:
2. DC Current Transfer Ratio (CTRCE) is defined as the transistor collector current (ICE) divided by the input LED
current (IF) x 100%, at a specified voltage between the collector and emitter (VCE).
3. The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent (ICB)
divided by the input LED current (IF) time 100%.
4. Referring to Figure 16 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input
pulse to the 1.3 V point on the falling edge of the output pulse.
5. Referring to Figure 16 the TPLH propagation delay is measured from the 50% point of the falling edge of data input
pulse to the 1.3 V point on the rising edge of the output pulse.
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
5
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VISO
Input-Output Isolation
Voltage(6)
t = 1 Minute
4170
RISO
Isolation Resistance(6)
VI-O = ±500 VDC, TA = 25°C
1011
CISO
Isolation Capacitance(7)
VI-O = 0 V, f = 1 MHz
CMH
Common Mode Transient
Rejection – Output HIGH
VCM = 50 VP-P, RL= 750 Ω, IF = 0
5000
V/µs
CML
Common Mode Transient
Rejection – Output LOW
VCM = 50 VP-P, RL = 750 Ω, IF =1.6 mA
5000
V/µs
VACRMS
Ω
0.4
0.6
pF
Notes:
6. Device considered a two terminal device: pins 1, 2, and 3 shorted together and pins 5, 6 and 7 are shorted together.
7. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output (pin 4, 5, 6 connected).
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
6
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Electrical Characteristics (Continued)
NORMALIZED CURRENT TRANSFER RATIO
VF – FORWARD VOLTAGE (V)
2.0
1.8
1.6
1.4
TA = -40°C
1.2
TA = 25°C
1.0
0.8
0.1
TA = 100°C
1
10
IF – LED FORWARD CURRENT (mA)
100
1.0
IF = 5 mA
0.8
IF = 2 mA
0.6
IF = 1 mA
0.4
IF = 0.5 mA
0.2
IF = 0.2 mA
0.0
-40
NORMALIZED ICE –
COLLECTOR-EMITTER CURRENT
NORMALIZED CURRENT TRANSFER RATIO
1.4
1.2
-20
-20
0
20
40
60
100
1.2
1.0
0.8
0.6
0.4
Normalized to:
IF = 5 mA
VCE = 5 V
TA = 25°C
0.2
0.0
0.1
10
IF = 10 mA
1
IF = 5 mA
IF = 2 mA
0.1
IF = 1 mA
IF = 0. 5mA
0.01
IF = 0.2 mA
0.0001
0.1
120
1
10
VCE – COLLECTOR-EMITTER VOLTAGE (V)
Figure 6. Normalized Collector
vs. Collector-Emitter Voltage
Figure 5. Normalized CTR vs. Temperature
100
10
NORMALIZED COLLECTOR-BASE
CURRENT
NORMALIZED ICB – COLLECTOR-BASE
PHOTO CURRENT
Normalized to:
IF = 5 mA
VCE = 5 V
TA = 25°C
0.001
TA – AMBIENT TEMPERATURE (°C)
10
1
Normalized to:
IF = 5 mA
VCB = 4.3 V
TA = 25°C
0.1
0.01
0.1
1
10
IF – FORWARD CURRENT (mA)
Figure 4. Normalized Current Transfer Ratio
vs. Forward Current
Figure 3. LED Forward Voltage
vs. Forward Current
Normalized to:
IF = 5 mA
VCE = 5 V
TA = 25°C IF = 10 mA
1.4
1
10
100
IF = 5 mA
1
IF = 2 mA
0.1
IF = 1 mA
IF = 0.5 mA
0.01 Normalized to:
IF = 0.2 mA
IF = 5 mA
VCB = 4.3 V
TA = 25°C
0.001
-60
-40
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
IF – FORWARD CURRENT (mA)
Figure 7. Normalized Collector Base Photocurrent
Ratio vs. Forward Current
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
IF = 10 mA
Figure 8. Normalized Collector-Base Current
vs. Temperature
www.fairchildsemi.com
7
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Typical Performance Curves
30
IF = 0 mA
VCE = 10 V
t – SWITCHING TIME (μs)
ICEO – DARK CURRENT (nA)
10000
1000
100
10
1
RBE = 330 kΩ
20
tf
ts
10
5
0
10
20 30 40 50 60 70 80 90
TA – AMBIENT TEMPERATURE (°C)
0
-40
100
-20
20
40
60
80
100
120
20
t – SWITCHING TIME (μs)
IF = 10 mA Refer to Figure 15 for switching time circuit
VCC = 5 V
RL = 1 kΩ
RBE = 100 kΩ
20
tf
tPLH
15
10
ts
5
tr
0
-40
-20
tPHL
0
20
40
16
IF = 5 mA
Refer to Figure 15 for switching time circuit
VCC = 5 V
RL = 1 kΩ
RBE = 330 kΩ
tf
12
tPLH
ts
8
4
tPHL
tr
td
td
60
80
100
0
-40
120
TA – AMBIENT TEMPERATURE (°C)
-20
0
20
40
60
80
100
120
TA – AMBIENT TEMPERATURE (°C)
Figure 12. Switching Time
vs. Ambient Temperature
Figure 11. Switching Time
vs. Ambient Temperature
20
100
IF = 5 mA
Refer to Figure 15 for switching time circuit
VCC = 5 V
RL = 1 kΩ
RBE = 100 kΩ
t – SWITCHING TIME (μs)
16
0
td
Figure 10. Switching Time
vs. Ambient Temperature
30
25
tPHL
TA – AMBIENT TEMPERATURE (°C)
Figure 9. Collector-Emitter Dark Current
vs. Ambient Temperature
t – SWITCHING TIME (μs)
tPLH
15
tr
0.1
t – SWITCHING TIME (μs)
Refer to Figure 15 for switching time circuit
IF = 10 mA
VCC = 5 V
25 RL = 1 kΩ
12
tf
tPLH
8
ts
4
tr
tPHL
t PLH
I F = 1.6 mA
R L = 4.7 kΩ
-20
0
20
40
60
80
100
tPHL, I F = 1.6 mA, RL = 4.7 kΩ
t PHL, I F = 3 mA, RL = 3.3 kΩ
VCC = 5 V
TA = 25°C
1
10
120
TA – AMBIENT TEMPERATURE (°C)
100
1000
10000
RBE – BASE-EMITTER RESISTANCE (kΩ)
Figure 13. Switching Time vs.
Ambient Temperature
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
t PHL, I F = 1 mA, RL = 10 kΩ
10
td
0
-40
t PLH, I F = 1 mA, RL = 10 kΩ
t PLH
I F = 3 mA
R L = 3.3 kΩ
Figure 14. Switching Time vs.
Base-Emitter Resistance
www.fairchildsemi.com
8
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Typical Performance Curves (Continued)
TA = 25°C unless otherwise specified.
VCC = 5.0 V
VCC = 5.0 V
Pulse Gen
ZO = 50Ω
f = 10KHz
10% D.F.
Pulse Gen
ZO = 50Ω
f = 10KHz
10% D.F.
1K
VO
1K
4.7K
D1
IF monitor
VO
IF monitor
330K
100 Ω
D2
D3
330K
100 Ω
D4
tr, tf, td, ts
TEST CIRCUIT
tPHL, tPLH
TEST CIRCUIT
Figure 15. Switching Time Test Circuits
INPUT
50%
(IF)
0
td
90%
OUTPUT
(VO)
90%
tPHL
tPLH
1.3 V
10%
1.3 V
10%
0
ts
tr
tf
Figure 16. Switching Time Waveforms
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
9
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Switching Time Test Circuits and Waveforms
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Reflow Profile
300
260°C
280
260
> 245°C = 42 s
240
220
200
180
°C
Time above
183°C = 90 s
160
140
120
1.822°C/s Ramp-up rate
100
80
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 17. Reflow Profile
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
10
Part Number
Package
Packing Method
MCT5210M
DIP 6-Pin
Tube (50 Units)
MCT5210SM
SMT 6-Pin (Lead Bend)
Tube (50 Units)
MCT5210SR2M
SMT 6-Pin (Lead Bend)
Tape and Reel (1000 Units)
MCT5210VM
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
MCT5210SVM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
MCT5210SR2VM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
MCT5210TVM
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Note:
8. The product orderable part number system listed in this table also applies to the MCT5211M device.
Marking Information
1
V
3
MCT5210
2
X YY Q
6
5
4
Figure 18. Top Mark
Table 1. Top Mark Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4
One-Digit Year Code, e.g., “5”
5
Digit Work Week, Ranging from “01” to “53”
6
Assembly Package Code
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
11
MCT5210M, MCT5211M — 6-Pin DIP Low Input Current Phototransistor Optocouplers
Ordering Information
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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