MJ15011G

MJ15011G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO204AA

  • 描述:

    TRANS NPN 250V 10A TO3

  • 详情介绍
  • 数据手册
  • 价格&库存
MJ15011G 数据手册
MJ15011(NPN), MJ15012(PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters or inverters. • High Safe Operating Area (100% Tested) 1.2 A @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage • • http://onsemi.com 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A For Low Distortion Complementary Designs Pb−Free Packages are Available* TO−204AA (TO−3) CASE 1−07 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Emitter Voltage VCEX 250 Vdc Emitter−Base Voltage VEB 5 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 10 15 Adc IB Adc Base Current − Continuous − Peak (Note 1) IBM 2 5 Emitter Current − Continuous − Peak (Note 1) IE IEM 12 20 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 200 1.14 Watts W/_C TJ, Tstg – 65 to + 200 _C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.875 _C/W TL 265 _C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 3 1 MARKING DIAGRAM MJ1501xG AYYWW MEX MJ1501x = Device Code x = 1 or 2 G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin ORDERING INFORMATION Device Package Shipping MJ15011 TO−204AA 100 Units/Tray MJ15011G TO−204AA (Pb−Free) 100 Units/Tray MJ15012 TO−204AA 100 Units/Tray MJ15012G TO−204AA (Pb−Free) 100 Units/Tray Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJ15011/D MJ15011 (NPN), MJ15012 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 250 − Vdc Collector Cutoff Current (VCE = 200 Vdc) ICEO − 1 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 15 Vdc) ICEX − 100 μAdc Emitter Cutoff Current (VBE = 5 Vdc) IEBO − 10 μAdc 20 15 120 − − − 0.6 1.0 OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) (IC = 100 mA) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 2 Adc, VCE = 2 Vdc) (IC = 4 Adc, VCE = 2 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 2 Adc, IB = 0.2 Adc) (IC = 4 Adc, IB = 0.4 Adc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 4 Adc, VCE = 2 Vdc) VBE(on) − 1.8 Vdc Cob − 750 pF 5 1.4 − − DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, f = 1 MHz) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 0.5 s) (VCE = 100 Vdc, t = 0.5 s) IS/b Adc 2. Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%. 200 10 hFE , DC CURRENT GAIN 100 IC, COLLECTOR CURRENT (AMP) VCE = 2 Vdc 50 20 MJ15011 MJ15012 10 5 2 dc 1 0.5 5 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.2 2 0.1 0.2 0.5 1 2 IC, COLLECTOR CURRENT 5 0.1 15 10 Figure 1. DC Current Gain 20 30 50 70 100 150 200 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 2. Active Region Safe Operating Area http://onsemi.com 2 300 MJ15011 (NPN), MJ15012 (PNP) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. A N C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR M http://onsemi.com 3 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z DATE 05/18/1988 SCALE 1:1 A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR STYLE 2: PIN 1. BASE 2. COLLECTOR CASE: EMITTER STYLE 3: PIN 1. GATE 2. SOURCE CASE: DRAIN STYLE 4: PIN 1. GROUND 2. INPUT CASE: OUTPUT STYLE 6: PIN 1. GATE 2. EMITTER CASE: COLLECTOR STYLE 7: PIN 1. ANODE 2. OPEN CASE: CATHODE STYLE 8: PIN 1. CATHODE #1 2. CATHODE #2 CASE: ANODE STYLE 9: PIN 1. ANODE #1 2. ANODE #2 CASE: CATHODE STYLE 5: PIN 1. CATHODE 2. EXTERNAL TRIP/DELAY CASE: ANODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. © Semiconductor Components Industries, LLC, 2000 January, 2000 − Rev. 07Z 1 Case Outline Number: 1 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
MJ15011G
物料型号:MJ15011(NPN型)、MJ15012(PNP型)

器件简介:MJ15011和MJ15012是ON Semiconductor公司生产的互补硅功率晶体管,适用于高功率音频、磁头定位器以及其他线性应用。

这些器件也可用于功率开关电路,如继电器或电磁铁驱动器、直流到直流转换器或逆变器。


引脚分配:1. 基极 2. 发射极 3. 集电极

参数特性: - 最大集电极-发射极电压:250V - 集电极电流-连续峰值:10-15A - 基极电流-连续峰值:2-5A - 发射极电流-连续峰值:12-20A - 总功耗:200W @ 25°C - 工作和存储结温范围:-65至+200°C - 热阻,结到壳体:0.875°C/W

功能详解:这些晶体管具有高安全工作区(100%测试),完全适用于线性操作,具有高直流电流增益和低饱和电压。

它们适用于低失真的互补设计,并且提供无铅封装。


应用信息:适用于高功率音频放大器、磁头定位器、继电器或电磁铁驱动器、直流到直流转换器或逆变器等应用。


封装信息:TO-204AA(TO-3)封装,100个/托盘。
MJ15011G 价格&库存

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