MJ15011(NPN),
MJ15012(PNP)
Preferred Devices
Complementary Silicon
Power Transistors
The MJ15011 and MJ15012 are PowerBase power transistors
designed for high−power audio, disk head positioners, and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, dc−to−dc converters or
inverters.
• High Safe Operating Area (100% Tested)
1.2 A @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
•
•
http://onsemi.com
10 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
250 VOLTS
200 WATTS
hFE = 20 (Min) @ 2 A, 2 V
VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A
For Low Distortion Complementary Designs
Pb−Free Packages are Available*
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Emitter Voltage
VCEX
250
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector Current − Continuous
− Peak (Note 1)
IC
ICM
10
15
Adc
IB
Adc
Base Current − Continuous
− Peak (Note 1)
IBM
2
5
Emitter Current − Continuous
− Peak (Note 1)
IE
IEM
12
20
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
200
1.14
Watts
W/_C
TJ, Tstg
– 65 to
+ 200
_C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.875
_C/W
TL
265
_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Maximum Lead Temperature for
Soldering Purposes
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 3
1
MARKING DIAGRAM
MJ1501xG
AYYWW
MEX
MJ1501x = Device Code
x = 1 or 2
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
Device
Package
Shipping
MJ15011
TO−204AA
100 Units/Tray
MJ15011G
TO−204AA
(Pb−Free)
100 Units/Tray
MJ15012
TO−204AA
100 Units/Tray
MJ15012G
TO−204AA
(Pb−Free)
100 Units/Tray
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJ15011/D
MJ15011 (NPN), MJ15012 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
250
−
Vdc
Collector Cutoff Current
(VCE = 200 Vdc)
ICEO
−
1
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 15 Vdc)
ICEX
−
100
μAdc
Emitter Cutoff Current
(VBE = 5 Vdc)
IEBO
−
10
μAdc
20
15
120
−
−
−
0.6
1.0
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(IC = 100 mA)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 2 Adc, VCE = 2 Vdc)
(IC = 4 Adc, VCE = 2 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.2 Adc)
(IC = 4 Adc, IB = 0.4 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage
(IC = 4 Adc, VCE = 2 Vdc)
VBE(on)
−
1.8
Vdc
Cob
−
750
pF
5
1.4
−
−
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1 MHz)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 0.5 s)
(VCE = 100 Vdc, t = 0.5 s)
IS/b
Adc
2. Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%.
200
10
hFE , DC CURRENT GAIN
100
IC, COLLECTOR CURRENT (AMP)
VCE = 2 Vdc
50
20
MJ15011
MJ15012
10
5
2
dc
1
0.5
5
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.2
2
0.1
0.2
0.5
1
2
IC, COLLECTOR CURRENT
5
0.1
15
10
Figure 1. DC Current Gain
20
30
50
70
100
150 200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Safe Operating Area
http://onsemi.com
2
300
MJ15011 (NPN), MJ15012 (PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
A
N
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
http://onsemi.com
3
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
DATE 05/18/1988
SCALE 1:1
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1. BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1. GROUND
2. INPUT
CASE: OUTPUT
STYLE 6:
PIN 1. GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
PIN 1. ANODE
2. OPEN
CASE: CATHODE
STYLE 8:
PIN 1. CATHODE #1
2. CATHODE #2
CASE: ANODE
STYLE 9:
PIN 1. ANODE #1
2. ANODE #2
CASE: CATHODE
STYLE 5:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE: ANODE
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
© Semiconductor Components Industries, LLC, 2000
January, 2000 − Rev. 07Z
1
Case Outline Number:
1
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