MJ15022 (NPN),
MJ15024 (NPN)
Silicon Power Transistors
The MJ15022 and MJ15024 are power transistors designed for high
power audio, disk head positioners and other linear applications.
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Features
•
•
•
•
High Safe Operating Area
High DC Current Gain
These Devices are Pb−Free and are RoHS Compliant*
Complementary to MJ15023 (PNP), MJ15025 (PNP)
16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
SCHEMATIC
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Symbol
MJ15022
MJ15024
MJ15022
MJ15024
VCEO
VCBO
Value
Vdc
200
250
1
BASE
Vdc
350
400
2
EMITTER
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage
VCEX
400
Vdc
IC
16
Adc
ICM
30
Adc
Base Current − Continuous
IB
5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
250
1.43
W
W/_C
TJ, Tstg
−65 to +200
_C
Collector Current
− Continuous
Collector Current
− Peak (Note 1)
Operating and Storage Junction
Temperature Range
CASE
3
Unit
3
1
TO−204AA (TO−3)
CASE 1−07
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.70
_C/W
2
MARKING DIAGRAM
MJ1502xG
AYWW
MEX
MJ1502x = Device Code
x = 2 or 4
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ15022G
TO−204
(Pb−Free)
100 Units / Tray
MJ15024G
TO−204
(Pb−Free)
100 Units / Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 12
1
Publication Order Number:
MJ15022/D
MJ15022 (NPN), MJ15024 (NPN)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
200
250
−
−
−
−
250
250
−
−
500
500
−
500
5
2
−
−
15
5
60
−
−
−
1.4
4.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
MJ15022
MJ15024
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
MJ15022
MJ15024
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
(VCE = 200 vdc, IB = 0)
MJ15022
MJ15024
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
VCEO(sus)
−
ICEX
mAdc
ICEO
IEBO
mAdc
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non−repetitive))
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
−
2.2
Vdc
fT
4
−
MHz
Cob
−
500
pF
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
IC, COLLECTOR CURRENT (AMPS)
100
50
TC = 25°C
20
10
5.0
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
LIMITED
1.0
0.2
0.1
0.1
0.2
20
0.5 10
50 100
250 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1k
Figure 1. Active−Region Safe Operating Area
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2
MJ15022 (NPN), MJ15024 (NPN)
C, CAPACITANCE (pF)
4000
3000
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
TYPICAL CHARACTERISTICS
TJ = 25°C
Cib
1000
500
Cob
100
40
0.3 0.5
1
10
30 50
5.0
VR, REVERSE VOLTAGE (VOLTS)
100
300
9
7
6
5
4
3
2
1
0
0.1
TJ = 100°C
VCE = 4 V
V, VOLTAGE (VOLTS)
20
10
10
1.4
1.0
0.8
5.0
VBE(on) @ VCE = 4 V
TJ = 25°C
100°C
0.2
1.0
0.2
5.0
1.8
TJ = 25°C
50
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
100°C
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
0
0.15
20
VCE(sat) @ IC/IB = 10
25°C
Figure 4. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
100
0.3
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Current−Gain — Bandwidth Product
Figure 2. Capacitances
200
TJ = 25°C
VCE = 10 V
fTest = 1 MHz
8
Figure 5. “On” Voltage
1.8
TJ = 25°C
1.4
1.0
16 A
0.6
8A
IC = 4 A
0.2
0
0.03
0.1
0.2
0.5 1.0 2.0
5.0
IB, BASE CURRENT (AMPS)
10
Figure 6. Collector Saturation Region
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3
30
10
20
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
DATE 05/18/1988
SCALE 1:1
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1. BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1. GROUND
2. INPUT
CASE: OUTPUT
STYLE 6:
PIN 1. GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
PIN 1. ANODE
2. OPEN
CASE: CATHODE
STYLE 8:
PIN 1. CATHODE #1
2. CATHODE #2
CASE: ANODE
STYLE 9:
PIN 1. ANODE #1
2. ANODE #2
CASE: CATHODE
STYLE 5:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE: ANODE
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
© Semiconductor Components Industries, LLC, 2000
January, 2000 − Rev. 07Z
1
Case Outline Number:
1
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