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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MJ4502
High-Power PNP Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100−Watts music power per channel.
http://onsemi.com
Features
•
•
•
•
High DC Current Gain − hFE = 25−100 @ IC = 7.5 A
Excellent Safe Operating Area
Complement to the NPN MJ802
Pb−Free Package is Available*
30 AMPERE
POWER TRANSISTOR
PNP SILICON
100 VOLTS − 200 WATTS
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCER
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Collector−Emitter Voltage
VCEO
90
Vdc
VEB
4.0
Vdc
Emitter−Base Voltage
Collector Current
IC
30
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
200
1.14
W
W/_C
TJ, Tstg
−65 to +200
_C
Operating and Storage Junction
Temperature Range
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
0.875
_C/W
MJ4502G
AYYWW
MEX
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MJ4502
G
A
YY
WW
MEX
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ4502
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
MJ4502G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 12
1
Publication Order Number:
MJ4502/D
MJ4502
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 200 mAdc, RBE = 100 W)
V(BR)CER
100
−
Vdc
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc)
VCEO(sus)
90
−
Vdc
−
−
1.0
5.0
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150_C)
ICBO
mAdc
Emitter−Base Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
IEBO
−
1.0
mAdc
DC Current Gain
(IC = 7.5 Adc, VCE = 2.0 Vdc)
hFE
25
100
−
Base−Emitter “On” Voltage
(IC = 7.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
1.3
Vdc
Collector−Emitter Saturation Voltage
(IC = 7.5 Adc, IB = 0.75 Adc)
VCE(sat)
−
0.8
Vdc
Base−Emitter Saturation Voltage
(IC = 7.5 Adc, IB = 0.75 Adc)
VBE(sat)
−
1.3
Vdc
fT
2.0
−
MHz
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
PD, POWER DISSIPATION (WATTS)
200
150
100
50
0
0
20
40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
180
Figure 1. Power−Temperature Derating Curve
http://onsemi.com
2
200
MJ4502
2.0
2.0
VCE = 2.0 V
TJ = 175°C
25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.2 0.3 0.5
1.0
1.6
1.4
1.2
VBE(sat) @ IC/IB = 10
1.0
0.8
VBE @ VCE = 2.0 V
0.6
0.4
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF ICBO.
0.1
0.03 0.05
TJ = 25°C
1.8
“ON” VOLTAGE (VOLTS)
hFE, NORMALIZED CURRENT GAIN
3.0
VCE(sat) @ IC/IB = 10
0.2
2.0 3.0 5.0
10
0
0.03 0.05
20 30
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
Figure 3. “On” Voltages
10
20 30
IC, COLLECTOR CURRENT (AMP)
100
1.0 ms
50
20
dc
100 ms
The Safe Operating Area Curves indicate IC − VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
10
5.0
2.0
1.0
0.5
0.2
0.1
1.0
TJ = 200°C
5.0 ms
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS @ TC = 25°C
PULSE DUTY CYCLE v 10%
2.0 3.0
5.0
10
20 30
50
VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)
100
Figure 4. Active Region Safe Operating Area
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3
MJ4502
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
U
SEATING
PLANE
K
2 PL
0.13 (0.005)
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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4
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Sales Representative
MJ4502/D
