MJ802
High−Power NPN Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100−Watts music power per channel.
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Features
•
•
•
•
High DC Current Gain − hFE = 25−100 @ IC = 7.5 A
Excellent Safe Operating Area
Complement to the PNP MJ4502
Pb−Free Package is Available*
30 AMPERE
POWER TRANSISTOR
NPN SILICON
100 VOLTS − 200 WATTS
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCER
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Collector−Emitter Voltage
VCEO
90
Vdc
Emitter−Base Voltage
VEB
4.0
Vdc
Collector Current
IC
30
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
200
1.14
W
W/_C
TJ, Tstg
−65 to +200
_C
Operating and Storage Junction
Temperature Range
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
0.875
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MJ802G
AYYWW
MEX
MJ802
G
A
YY
WW
MEX
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
MJ802
MJ802G
Package
Shipping
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
1
Publication Order Number:
MJ802/D
MJ802
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
BVCER
100
−
Vdc
VCEO(sus)
90
−
Vdc
−
−
1.0
5.0
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 200 mAdc, RBE = 100 W)
Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc)
Collector−Base Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150_C)
ICBO
mAdc
Emitter−Base Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
IEBO
−
1.0
mAdc
DC Current Gain (Note 1)
(IC = 7.5 Adc, VCE = 2.0 Vdc)
hFE
25
100
−
Base−Emitter “On” Voltage
(IC = 7.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
1.3
Vdc
Collector−Emitter Saturation Voltage
(IC = 7.5 Adc, IB = 0.75 Adc)
VCE(sat)
−
0.8
Vdc
Base−Emitter Saturation Voltage
(IC = 7.5 Adc, IB = 0.75 Adc)
VBE(sat)
−
1.3
Vdc
fT
2.0
−
MHz
ON CHARACTERISTICS(1)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
PD, POWER DISSIPATION (WATTS)
200
150
100
50
0
0
20
40
60
80 100 120 140
TC, CASE TEMPERATURE (°C)
160
180
Figure 1. Power−Temperature Derating Curve
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2
200
MJ802
2.0
2.0
TJ = 175° C
25°C
1.0
0.7
0.5
0.3
0.2
1.0
0.2 0.3 0.5
2.0 3.0 5.0
0.5
0.2
0.1
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
0
0.03 0.05
20 30
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
Figure 3. ‘‘On” Voltages
1.0 ms
dc
TJ = 200° C
5.0ms
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS TC = 25°C
PULSE DUTY CYCLE ≤ 10%
5.0
10
20 30
2.0 3.0
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
20 30
The Safe Operating Area Curves indicate IC − VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ, power
temperature derating must be observed for both steady state
and pulse power conditions.
100 ms
5.0
1.0
1.0
0.2
10
20
2.0
1.2
IC, COLLECTOR CURRENT (AMP)
100
50
10
1.4
0.4
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF ICBO.
0.1
TJ = 25°C
1.6
VCE = 2.0 V
− 55°C
0.1
0.03 0.05
IC, COLLECTOR CURRENT (AMP)
1.8
ON" VOLTAGE (VOLTS)
hFE, NORMALIZED CURRENT GAIN
3.0
100
Figure 4. Active Region Safe Operating Area
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
DATE 05/18/1988
SCALE 1:1
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1. BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1. GROUND
2. INPUT
CASE: OUTPUT
STYLE 6:
PIN 1. GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
PIN 1. ANODE
2. OPEN
CASE: CATHODE
STYLE 8:
PIN 1. CATHODE #1
2. CATHODE #2
CASE: ANODE
STYLE 9:
PIN 1. ANODE #1
2. ANODE #2
CASE: CATHODE
STYLE 5:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE: ANODE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
© Semiconductor Components Industries, LLC, 2000
January, 2000 − Rev. 07Z
1
Case Outline Number:
1
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