MJD122T4G

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features www.onsemi.com SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, • • • • • • TIP120−TIP122 Series, and TIP125−TIP127 Series Monolithic Construction With Built−in Base−Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: ♦ Human Body Model, 3B > 8000 V ♦ Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DPAK CASE 369C STYLE 1 COLLECTOR 2, 4 BASE 1 EMITTER 3 MARKING DIAGRAM AYWW J12xG A Y WW x G = Assembly Location = Year = Work Week = 2 or 7 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2013 September, 2016 − Rev. 15 1 Publication Order Number: MJD122/D MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc Collector−Emitter Voltage Collector Current Continuous Peak IC Base Current IB Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Adc 8 16 120 20 0.16 Operating and Storage Junction Temperature Range TJ, Tstg mAdc W W/°C 1.75 0.014 W W/°C −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note1) RqJA 71.4 °C/W 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. www.onsemi.com 2 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max 100 − − 10 − 10 − 2 1000 100 12,000 − − − 2 4 − 4.5 − 2.8 4 − Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) VCE(sat) Base−Emitter Saturation Voltage (Note 2) (IC = 8 Adc, IB = 80 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) |hfe| Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD127, NJVMJD127 MJD122, NJVMJD122 Cob Small−Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) hfe MHz pF − − 300 200 300 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 3 125 150 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 NPN MJD122 20,000 20,000 VCE = 4 V VCE = 4 V 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 300 200 0.1 -55°C 0.2 5000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 0.3 0.5 0.7 1 2 3 7 5 300 200 0.1 10 0.2 0.5 0.7 0.3 IC, COLLECTOR CURRENT (AMP) 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 IB, BASE CURRENT (mA) 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 3 3 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 1.5 1 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 2 1.5 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 VBE(sat) @ IC/IB = 250 1 2 3 5 7 0.5 0.1 10 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 4. “On” Voltages www.onsemi.com 4 5 7 10 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD122 +5 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) PNP MJD127 *IC/IB ≤ hFE/3 +4 +3 +2 +1 0 25°C to 150°C qVC for VCE(sat) -1 -2 -3 -55°C to 25°C 25°C to 150°C qVB for VBE -55°C to 25°C -4 -5 0.1 0.2 0.3 1 2 3 0.5 IC, COLLECTOR CURRENT (AMP) 5 7 +5 +4 *IC/IB ≤ hFE/3 +3 25°C to 150°C +2 -55°C to 25°C +1 0 *qVC for VCE(sat) -1 -2 -3 -4 -5 0.1 10 25°C to 150°C qVB for VBE -55°C to 25°C 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 5. Temperature Coefficients 105 105 REVERSE FORWARD IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ REVERSE 104 VCE = 30 V 103 102 TJ = 150°C 101 100°C 100 25°C 10-1 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) FORWARD 104 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 +1.2 +1.4 Figure 6. Collector Cut−Off Region 300 5000 3000 2000 200 TJ = 25°C C, CAPACITANCE (pF) hfe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 2 5 100 70 Cib 50 PNP NPN 1 Cob 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1 PNP NPN 0.2 0.5 1 2 5 10 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Figure 7. Small−Signal Current Gain www.onsemi.com 5 20 50 100 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC -30 V RC SCOPE RB 51 ≈ 8 k ≈ 120 D1 +4V 25 ms tf 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1% PNP NPN ts 1 t, TIME (s) μ TUT V2 APPROX +8 V 0 V1 APPROX -12 V 3 2 0.2 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Times Test Circuit 1 0.7 0.5 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C td @ VBE(off) = 0 V 0.3 0.5 0.7 1 3 2 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 10. Switching Times D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.03 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.01 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (AMP) Figure 11. Thermal Response 20 15 10 500m σ 5 3 2 0.5 0.3 0.2 5ms BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.02 100m σ 1ms TJ = 150°C 1 1 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 3 5 7 10 20 dc 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating rea www.onsemi.com 6 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 13. Darlington Schematic ORDERING INFORMATION Package Type Shipping† MJD122G DPAK (Pb−Free) 75 Units / Rail MJD122T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVMJD122T4G* DPAK (Pb−Free) 2,500 / Tape & Reel MJD127G DPAK (Pb−Free) 75 Units / Rail MJD127T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVMJD127T4G* DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 7 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD122/D