MJD122TF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122 Complement to MJD127 C B 1 1.Base D-PAK 2.Collector 3.Emitter R1 R1  8k R2  0.12k R2 E Ordering Information Part Number Top Mark Package Packing Method MJD122TF MJD122 TO-252 3L (DPAK) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current PC Parameter 120 mA Collector Dissipation (TC = 25C) 20 W Collector Dissipation (TA = 25C) 1.75 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 to 150 C © 1999 Fairchild Semiconductor Corporation MJD122 Rev. 2.4 www.fairchildsemi.com MJD122 — NPN Silicon Darlington Transistor March 2016 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage(1) Test Condition IC = 30 mA, IB = 0 Min. Max. 100 Units V ICEO Collector Cut-off Current VCE = 50 V, IB = 0 10 A ICBO Collector Cut-off Current VCB = 100 V, IE = 0 10 A IEBO Emitter Cut-off Current VEB = 5 V, IC = 0 2 mA hFE DC Current Gain (1) VCE = 4 V, IC = 4 A VCE = 4 V, IC = 8 A VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 4 A, IB = 16 mA IC = 8 A, IB = 80 mA VBE(sat) Base-Emitter Saturation Voltage(1) VBE(on) Base-Emitter On Voltage(1) Output Capacitance Cob 1000 100 12K 2 4 V V IC = 8 A, IB = 80 mA 4.5 V VCE = 4 V, IC = 4 A 2.8 V VCB = 10 V, IE = 0 f= 0.1MHz 200 pF Note: 1. Pulse test: pw300 s, duty cycle 2%. © 1999 Fairchild Semiconductor Corporation MJD122 Rev. 2.4 www.fairchildsemi.com 2 MJD122 — NPN Silicon Darlington Transistor Electrical Characteristics Values are at TA = 25°C unless otherwise noted. VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k hFE, DC CURRENT GAIN VCE = 4V 1k 100 0.1 1 10 10 IC = 250 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain 100 10 tR,tD[s], TURN ON TIME Cob[pF], CAPACITANCE 10 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 1 0.1 1 IC[A], COLLECTOR CURRENT 1 10 VCC= 30V IC=250IB IB1=IB2 1 tR tD, VBE(off)=0 0.1 0.01 0.1 100 1 10 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Turn On Time 100 10 IC[A], COLLECTOR CURRENT tSTG,tF[s], TURN OFF TIME VCC=30V IC=250IB tSTG 1 tF 10 0 s 50 0 s 10 1m 5m s DC s 1 0.1 0.01 0.1 0.1 1 1 10 Figure 5. Turn Off Time © 1999 Fairchild Semiconductor Corporation MJD122 Rev. 2.4 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 6. Safe Operating Area www.fairchildsemi.com 3 MJD122 — NPN Silicon Darlington Transistor Typical Performance Characteristics MJD122 — NPN Silicon Darlington Transistor Typical Performance Characteristics (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating Curve © 1999 Fairchild Semiconductor Corporation MJD122 Rev. 2.4 www.fairchildsemi.com 4 0.10 B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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