MJD127T4G

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features www.onsemi.com SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, • • • • • • TIP120−TIP122 Series, and TIP125−TIP127 Series Monolithic Construction With Built−in Base−Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: ♦ Human Body Model, 3B > 8000 V ♦ Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DPAK CASE 369C STYLE 1 COLLECTOR 2, 4 BASE 1 EMITTER 3 MARKING DIAGRAM AYWW J12xG A Y WW x G = Assembly Location = Year = Work Week = 2 or 7 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2013 September, 2016 − Rev. 15 1 Publication Order Number: MJD122/D MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc Collector−Emitter Voltage Collector Current Continuous Peak IC Base Current IB Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Adc 8 16 120 20 0.16 Operating and Storage Junction Temperature Range TJ, Tstg mAdc W W/°C 1.75 0.014 W W/°C −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note1) RqJA 71.4 °C/W 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. www.onsemi.com 2 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max 100 − − 10 − 10 − 2 1000 100 12,000 − − − 2 4 − 4.5 − 2.8 4 − Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) VCE(sat) Base−Emitter Saturation Voltage (Note 2) (IC = 8 Adc, IB = 80 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) |hfe| Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD127, NJVMJD127 MJD122, NJVMJD122 Cob Small−Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) hfe MHz pF − − 300 200 300 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 3 125 150 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 NPN MJD122 20,000 20,000 VCE = 4 V VCE = 4 V 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 300 200 0.1 -55°C 0.2 5000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 0.3 0.5 0.7 1 2 3 7 5 300 200 0.1 10 0.2 0.5 0.7 0.3 IC, COLLECTOR CURRENT (AMP) 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 3 TJ = 25°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 IB, BASE CURRENT (mA) 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 3 3 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 1.5 1 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 2 1.5 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 VBE(sat) @ IC/IB = 250 1 2 3 5 7 0.5 0.1 10 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 4. “On” Voltages www.onsemi.com 4 5 7 10 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD122 +5 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) PNP MJD127 *IC/IB ≤ hFE/3 +4 +3 +2 +1 0 25°C to 150°C qVC for VCE(sat) -1 -2 -3 -55°C to 25°C 25°C to 150°C qVB for VBE -55°C to 25°C -4 -5 0.1 0.2 0.3 1 2 3 0.5 IC, COLLECTOR CURRENT (AMP) 5 7 +5 +4 *IC/IB ≤ hFE/3 +3 25°C to 150°C +2 -55°C to 25°C +1 0 *qVC for VCE(sat) -1 -2 -3 -4 -5 0.1 10 25°C to 150°C qVB for VBE -55°C to 25°C 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 5. Temperature Coefficients 105 105 REVERSE FORWARD IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ REVERSE 104 VCE = 30 V 103 102 TJ = 150°C 101 100°C 100 25°C 10-1 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) FORWARD 104 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 +1.2 +1.4 Figure 6. Collector Cut−Off Region 300 5000 3000 2000 200 TJ = 25°C C, CAPACITANCE (pF) hfe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 2 5 100 70 Cib 50 PNP NPN 1 Cob 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1 PNP NPN 0.2 0.5 1 2 5 10 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Figure 7. Small−Signal Current Gain www.onsemi.com 5 20 50 100 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC -30 V RC SCOPE RB 51 ≈ 8 k ≈ 120 D1 +4V 25 ms tf 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1% PNP NPN ts 1 t, TIME (s) μ TUT V2 APPROX +8 V 0 V1 APPROX -12 V 3 2 0.2 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Times Test Circuit 1 0.7 0.5 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C td @ VBE(off) = 0 V 0.3 0.5 0.7 1 3 2 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 10. Switching Times D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.03 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.01 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (AMP) Figure 11. Thermal Response 20 15 10 500m σ 5 3 2 0.5 0.3 0.2 5ms BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.02 100m σ 1ms TJ = 150°C 1 1 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 3 5 7 10 20 dc 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating rea www.onsemi.com 6 MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 13. Darlington Schematic ORDERING INFORMATION Package Type Shipping† MJD122G DPAK (Pb−Free) 75 Units / Rail MJD122T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVMJD122T4G* DPAK (Pb−Free) 2,500 / Tape & Reel MJD127G DPAK (Pb−Free) 75 Units / Rail MJD127T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVMJD127T4G* DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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