MJD340T4G

MJD340(NPN), MJD350(PNP) High Voltage Power Transistors DPAK for Surface Mount Applications www.onsemi.com Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically Similar to Popular MJE340 and MJE350 • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Max Unit VCEO 300 Vdc Collector−Base Voltage VCB 300 Vdc Emitter−Base Voltage VEB 3 Vdc IC 0.5 Adc Collector Current − Peak ICM 0.75 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 15 0.12 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.56 0.012 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Collector−Emitter Voltage Collector Current − Continuous ESD − Human Body Model ESD − Machine Model COLLECTOR 2, 4 1 BASE 1 BASE 3 EMITTER 3 EMITTER 4 1 2 3 DPAK CASE 369C STYLE 1 AYWW J3x0G V 3B 2 MM MJD340 (NPN) MJD350 (PNP) COLLECTOR 2, 4 MARKING DIAGRAM HBM MJD340 (NPN) MJD350 (PNP) SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS V M4 M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. A Y WW J3x0 G = = = = Assembly Location Year Work Week Device Code x= 4 or 5 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 12 1 Publication Order Number: MJD340/D MJD340 (NPN), MJD350 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.33 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W TL 260 °C Min Max Unit 300 − − 0.1 − 0.1 30 240 − 1 − 1.5 10 − Leading Temperature for Soldering Purpose ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 1 mA, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 300 V, IE = 0) ICEO Emitter Cutoff Current (VBE = 3 V, IC = 0) IEBO V mA mA ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 50 mA, VCE = 10 V) hFE Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 10 mA) VCE(sat) Base−Emitter On Voltage (IC = 1 A, VCE = 10 V) VBE(on) − V V DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 50 mA, VCE = 10 V, f = 10 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 MJD340 (NPN), MJD350 (PNP) TYPICAL CHARACTERISTICS MJD340 300 VCE = 2 V VCE = 10 V hFE , DC CURRENT GAIN 200 TJ = 150°C 100 70 +100°C 50 +25°C 30 20 10 -55°C 1 2 3 5 7 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) 70 100 200 300 500 Figure 1. DC Current Gain MJD340 1 V, VOLTAGE (VOLTS) TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 2. “On” Voltages MJD350 1 TJ = 150°C TJ = 25°C 0.8 V, VOLTAGE (VOLTS) 25°C 100 hFE , DC CURRENT GAIN MJD350 1 200 70 -55°C 50 30 20 VCE = 2 V VCC = 10 V 7 10 0.6 VBE @ VCE = 10 V 0.4 IC/IB = 10 0.2 VCE(sat) 10 5 VBE(sat) @ IC/IB = 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 0 500 5 Figure 3. DC Current Gain 7 10 IC/IB = 5 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages www.onsemi.com 3 200 300 500 MJD340 (NPN), MJD350 (PNP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.01 SINGLE PULSE 0.02 0.03 0.05 P(pk) RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k Figure 5. Thermal Response 1000 IC, COLLECTOR CURRENT (mA) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 500 300 200 500 ms 1 ms 100 50 30 20 dc 10 5 3 2 10 20 30 50 70 100 200 300 500 700 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Active Region Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 1 2 20 1.5 15 TA TC 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 7. Power Derating www.onsemi.com 4 125 150 MJD340 (NPN), MJD350 (PNP) ORDERING INFORMATION Package Shipping† MJD340G DPAK (Pb−Free) 75 Units / Rail MJD340RLG DPAK (Pb−Free) 1,800 / Tape & Reel MJD340T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVMJD340T4G DPAK (Pb−Free) 2,500 / Tape & Reel MJD350G DPAK (Pb−Free) 75 Units / Rail MJD350T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVMJD350T4G DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MJD340 (NPN), MJD350 (PNP) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS SOLDERING FOOTPRINT* 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ROTATED 905 CW 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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