MJD41CRL

MJD41C (NPN) MJD42C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“1” Suffix) Electrically Similar to Popular TIP41 and TIP42 Series Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS, 20 WATTS MARKING DIAGRAMS 4 1 2 YWW J4xCG 3 DPAK CASE 369C STYLE 1 MAXIMUM RATINGS Rating Symbol Max Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc IC 6 10 Adc Collector−Emitter Voltage Collector Current − Continuous − Peak Base Current IB 2 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg W 1.75 0.014 W/°C −65 to +150 °C YWW J4xCG 1 2 3 DPAK−3 CASE 369D STYLE 1 Y = Year WW = Work Week J4xC = Device Code x = 1 or 2 G = Pb−Free Package ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 4 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 °C/W See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2009 April, 2009 − Rev. 7 1 Publication Order Number: MJD41C/D MJD41C (NPN) MJD42C (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO − 50 mAdc Collector Cutoff Current (VCE = 100 Vdc, VEB = 0) ICES − 10 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 0.5 mAdc 30 15 − 75 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 0.3 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) − Collector−Emitter Saturation Voltage (IC = 6 Adc, IB = 600 mAdc) VCE(sat) − 1.5 Vdc Base−Emitter On Voltage (IC = 6 Adc, VCE = 4 Vdc) VBE(on) − 2 Vdc Current Gain − Bandwidth Product (Note 3) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT 3 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 20 − − DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. fT = ⎪hfe⎪• ftest. ORDERING INFORMATION Device MJD41CRL MJD41CRLG MJD41CT4 MJD41CT4G MJD42C Package Type DPAK 369C DPAK (Pb−Free) 2500 / Tape & Reel DPAK MJD42C1 DPAK−3 MJD42C1G DPAK−3 (Pb−Free) MJD42CRL DPAK MJD42CT4G 1800 / Tape & Reel DPAK (Pb−Free) DPAK (Pb−Free) MJD42CT4 Shipping† DPAK MJD42CG MJD42CRLG Package 75 Units / Rail 369D 1800 / Tape & Reel DPAK (Pb−Free) 369C DPAK 2500 / Tape & Reel DPAK (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MJD41C (NPN) MJD42C (PNP) PD, POWER DISSIPATION (WATTS) TYPICAL CHARACTERISTICS TA 2.5 TC 25 2 20 VCC +30 V +11 V 1.5 0 15 TC TA SURFACE MOUNT 10 0.5 5 0 0 25 50 tr, tf ≤ 10 ns DUTY CYCLE = 1% 75 100 125 150 Figure 2. Switching Time Test Circuit 2 500 300 200 VCE = 2 V TJ = 150°C 100 70 50 0.7 0.5 25°C 30 20 TJ = 25°C VCC = 30 V IC/IB = 10 1 t, TIME (s) μ hFE , DC CURRENT GAIN -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: MSB5300 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES FOR PNP. Figure 1. Power Derating 10 7 5 0.06 0.3 0.2 tr 0.1 0.07 -55°C td @ VBE(off) ≈ 5 V 0.05 0.2 0.1 0.3 0.4 0.6 1 2 4 0.03 0.02 0.06 0.1 6 0.2 0.4 1 2 IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain Figure 4. Turn−On Time 4 6 5 TJ = 25°C TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 3 2 1.6 t, TIME (s) μ ts 1.2 VCE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.2 0.3 0.4 0.3 0.2 0.1 0.07 0.05 0.06 0.1 VBE(sat) @ IC/IB = 10 0.1 1 0.7 0.5 tf 0.4 0 0.06 0.6 IC, COLLECTOR CURRENT (AMP) 2 0.8 D1 51 -9 V 1 SCOPE RB T, TEMPERATURE (°C) V, VOLTAGE (VOLTS) RC 25 ms 0.6 1 2 3 4 6 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1 2 IC, COLLECTOR CURRENT (AMP) Figure 5. “On” Voltages Figure 6. Turn−Off Time http://onsemi.com 3 4 6 300 2 TJ = 25°C TJ = 25°C 200 1.6 IC = 1 A 2.5 A C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MJD41C (NPN) MJD42C (PNP) 5A 1.2 0.8 Cib 100 70 Cob 50 0.4 0 10 20 30 50 100 200 300 IB, BASE CURRENT (mA) 500 1000 30 0.5 1 3 10 2 5 20 VR, REVERSE VOLTAGE (VOLTS) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.05 0.02 0.03 P(pk) RqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 50 Figure 8. Capacitance Figure 7. Collector Saturation Region 1 0.7 0.5 30 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 9. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 500ms 5 3 2 1ms dc 5ms 1 0.5 0.3 WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.01 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms TC = 25°C SINGLE PULSE TJ = 150°C 1 MJD41C, 42C 2 3 5 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Maximum Forward Bias Safe Operating Area http://onsemi.com 4 MJD41C (NPN) MJD42C (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− MJD41C (NPN) MJD42C (PNP) PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD41C/D