MJD45H11TM

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This literature is subject to all applicable copyright laws and is not for resale in any manner. MJD45H11 PNP Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Fast Switching Speeds • Low Collector Emitter Saturation Voltage 1 1.Base D-PAK 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method MJD45H11TF MJD45H11 TO-252 3L (DPAK) Tape and Reel MJD45H11TM MJD45H11 TO-252 3L (DPAK) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage - 80 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -8 A ICP Collector Current (Pulse) - 16 A PC TJ TSTG Parameter Collector Dissipation (TC = 25°C) 20 Collector Dissipation (TA = 25°C) 1.75 Junction Temperature 150 °C - 55 to +150 °C Storage Temperature Range © 2003 Fairchild Semiconductor Corporation MJD45H11 Rev. 3.2 W www.fairchildsemi.com 1 MJD45H11 — PNP Epitaxial Silicon Transistor April 2015 Values are at TA = 25°C unless otherwise noted. Symbol VCEO(sus) Parameter (1) Conditions Min. - 80 Typ. Max. Unit Collector-Emitter Sustaining Voltage IC = - 30 mA, IB = 0 ICEO Collector Cut-Off Current VCE = - 80 V, IB = 0 - 10 μA IEBO Emitter Cut-Off Current VEB = - 5 V, IC = 0 - 50 μA hFE DC Current Gain(1) -1 V VCE(sat) Collector-Emitter Saturation Voltage (1) (1) VCE = - 1 V, IC = - 2 A 60 VCE = - 1 V, IC = - 4 A 40 V IC = - 8 A, IB = - 0.4 A VBE(sat) Base-Emitter Saturation Voltage IC = - 8 A, IB = - 0.8 A fT Current Gain Bandwidth Product VCE = - 10 V, IC = - 0.5 A 40 MHz Cob Collector Capacitance VCB = - 10 V, f = 1 MHz 230 pF tON Turn-On Time 135 ns tSTG Storage Time 500 ns 100 ns tF Fall Time IC = - 5 A, IB1 = - IB2 = - 0.5 A - 1.5 V Note: 1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2003 Fairchild Semiconductor Corporation MJD45H11 Rev. 3.2 www.fairchildsemi.com 2 MJD45H11 — PNP Epitaxial Silicon Transistor Electrical Characteristics 1000 -100 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN VCE = -1V 100 10 1 -0.01 ICP(max) IC(max) 1m s 5m s DC -1 -0.1 -0.01 -0.1 -1 -10 -1 IC[A], COLLECTOR CURRENT -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC Current Gain Figure 2. Safe Operating Area 4 25 20 PC[W], POWER DISSIPATION PC[W], POWER DISSIPATION 10 0μ s 50 0μ s -10 15 10 5 3 2 1 0 0 0 25 50 75 100 125 150 0 175 50 75 100 125 150 175 TA[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 4. Power Derating vs. TA Figure 3. Power Derating vs TC © 2003 Fairchild Semiconductor Corporation MJD45H11 Rev. 3.2 25 o o www.fairchildsemi.com 3 MJD45H11 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics MJD45H11 — PNP Epitaxial Silicon Transistor Physical Dimensions ) $   0,1  )   0,1   )      &  0,1  0$;        0,1  /$1'3$77(515(&200(1'$7,21 ) %   )   )   0,1   )   6(('(7$,/$  % ) *$*(3/$1(   )   127(681/(6627+(5:,6(63(&,),(' $127&203/,$1772-('(&729$5,$7,21$% 0$; %$//',0(16,21$5(,10,//,0(7(5 &',0(16,216$5((;&/86,9(2)%855602/')/$6+ 6($7,1*3/$1( $1'7,(%$5(;7586,216 '/$'3$77(513(5,3&$$7$1'$5' 723;1 ('5$:,1*),/(1$0(0.772'5(9 )'2(6127&203/