MJD50TF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. MJD47 / MJD50 NPN Epitaxial Silicon Transistor Features • • • • • High-Voltage and High-Reliability D-PAK for Surface-Mount Applications Lead-Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “ - I ” Suffix) Electrically Similar to Popular TIP47 and TIP50 D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method MJD47TF MJD47 TO-252 3L (DPAK) Tape and Reel MJD50TF MJD50 TO-252 3L (DPAK) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value MJD47 350 MJD50 500 MJD47 250 MJD50 400 Unit VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1 A ICP Collector Current (Pulse) 2 A IB Base Current 0.6 A TJ Junction Temperature 150 °C - 65 to 150 °C TSTG Storage Temperature Range © 2001 Fairchild Semiconductor Corporation MJD47 / MJD50 Rev. 1.1.0 V V www.fairchildsemi.com 1 MJD47 / MJD50 — NPN Epitaxial Silicon Transistor March 2014 Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TC = 25°C) 15.0 Collector Dissipation (TA = 25°C) 1.56 Unit W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage(1) ICEO Collector Cut-Off Current ICES Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE Conditions MJD47 IC = 30 mA, IB = 0 MJD50 Min. Typ. Max. 250 V 400 MJD47 VCE = 150 V, IB = 0 0.2 MJD50 VCE = 300 V, IB = 0 0.2 MJD47 VCE = 350 V, VEB = 0 0.1 MJD50 VCE = 500 V, VEB = 0 0.1 VBE = 5 V, IC = 0 DC Current Gain(1) (1) 1 VCE = 10 V, IC = 0.3 A 30 VCE = 10 V, IC = 1 A 10 Unit mA mA mA 150 VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 0.2 A 1 V VBE(on) Base-Emitter On Voltage(1) VCE = 10 V, IC = 1 A 1.5 V Current Gain Bandwidth Product VCE = 10 V, IC = 0.2 A fT 10 MHz Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. © 2001 Fairchild Semiconductor Corporation MJD47 / MJD50 Rev. 1.1.0 www.fairchildsemi.com 2 MJD47 / MJD50 — NPN Epitaxial Silicon Transistor Thermal Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.01 0.1 1 10 IC = 5 I B VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 10 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10 VCC = 200V IC = 5IB tSTG, tF [μs], TURN OFF TIME tR, tD [μs], TURN ON TIME VCC = 200V IC = 5IB 1 tR 0.1 tSTG 1 0.1 tF tD 0.01 0.01 0.1 1 0.01 0.01 10 0.1 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 3. Turn-On Time Figure 4. Turn-Off Time 20 ICP(max) 1 PC[W], POWER DISSIPATION 10 10 50 0μ s 0μ s IC(max) DC 1m s 0.01 KSH50 0.1 KSH47 IC[A], COLLECTOR CURRENT 1 15 10 5 0 1E-3 1 10 100 0 1000 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area © 2001 Fairchild Semiconductor Corporation MJD47 / MJD50 Rev. 1.1.0 25 Figure 6. Power Derating www.fairchildsemi.com 3 MJD47 / MJD50 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics MJD47 / MJD50 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-252 3L ) $   0,1  )   0,1   )      &  0,1  0$;        0,1  /$1'3$77(515(&200(1'$7,21 ) %   )   )   0,1   6(('(7$,/$ )    % ) *$*(3/$1(   )   127(681/(6627+(5:,6(63(&,),(' $127&203/,$1772-('(&729$5,$7,21$% 0$; %$//',0(16,21$5(,10,//,0(7(5 &',0(16,216$5((;&/86,9(2)%855602/')/$6+ 6($7,1*3/$1( $1'7,(%$5(;7586,216 '/$'3$77(513(5,3&$$7$1'$5' 723;1 ('5$:,1*),/(1$0(0.772'5(9 )'2(6127&203/