MJE15032 (NPN),
MJE15033 (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
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Features
•
•
•
•
•
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
250 VOLTS, 50 WATTS
MAXIMUM RATINGS
Rating
COMPLEMENTARY
Symbol
Value
Unit
VCEO
250
Vdc
Collector−Base Voltage
VCB
250
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
8.0
Adc
ICM
16
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
50
0.40
W
W/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
– 65 to + 150
_C
Collector−Emitter Voltage
Collector Current − Continuous
Collector Current − Peak
Operating and Storage Junction
Temperature Range
TJ, Tstg
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
COLLECTOR
2, 4
1
BASE
COLLECTOR
2, 4
1
BASE
3
EMITTER
3
EMITTER
MARKING
DIAGRAM
4
TO−220
CASE 221A
STYLE 1
1
2
MJE1503xG
AYWW
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction−to−Case
RqJC
Thermal Resistance,
Junction−to−Ambient
RqJA
Max
Unit
_C/W
2.5
_C/W
62.5
MJE1503x = Specific Device Code
x
= 2 or 3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 6
1
Device
Package
Shipping
MJE15032G
TO−220
(Pb−Free)
50 Units/Rail
MJE15033G
TO−220
(Pb−Free)
50 Units/Rail
Publication Order Number:
MJE15032/D
MJE15032 (NPN), MJE15033 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
250
−
−
10
−
10
70
50
10
−
−
−
−
0.5
−
1.0
30
−
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = ⎪hfe⎪• ftest.
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2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJE15032 (NPN), MJE15033 (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500 1.0 k
Figure 1. Thermal Response
IC, COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 2 and 4 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
100 ms
10
50ms
250ms
10ms
1.0
0.1
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
Figure 2. MJE15032 & MJE15033
Safe Operating Area
PD, POWER DISSIPATION (WATTS)
0.01
1.0
TA
TC
3.0
60
2.0
40
TC
1.0
20
0
0
TA
0
20
40
60
80
100
T, TEMPERATURE (°C)
Figure 3. Power Derating
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3
120
140
160
MJE15032 (NPN), MJE15033 (PNP)
NPN − MJE15032
PNP − MJE15033
1000
1000
h FE, DC CURRENT GAIN
h FE, DC CURRENT GAIN
150°C
25°C
100
-55°C
10
1.0
150°C
100
25°C
-55°C
10
1.0
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
10
0.1
10
V, VOLTAGE (VOLTS)
10
V, VOLTAGE (VOLTS)
10
Figure 5. PNP − MJE15033
VCE = 5 V DC Current Gain
Figure 4. NPN − MJE15032
VCE = 5 V DC Current Gain
-55°C
1.0
25°C
150°C
0.1
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
25°C
150°C
0.1
10
-55°C
1.0
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. PNP − MJE15033
VCE = 5 V VBE(on) Curve
Figure 6. NPN − MJE15032
VCE = 5 V VBE(on) Curve
10
100
150°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0
IC, COLLECTOR CURRENT (AMPS)
25°C
1.0
-55°C
0.1
10
25°C
1.0
-55°C
150°C
0.1
0.01
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. PNP − MJE15033
VCE(sat) IC/IB = 10
Figure 8. NPN − MJE15032
VCE(sat) IC/IB = 10
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4
10
MJE15032 (NPN), MJE15033 (PNP)
NPN − MJE15032
PNP − MJE15033
100
150°C
150°C
10
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
100
25°C
1.0
-55°C
0.1
25°C
10
-55°C
1.0
0.1
0.01
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
0.1
10
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. NPN − MJE15032
VCE(sat) IC/IB = 20
Figure 11. PNP − MJE15033
VCE(sat) IC/IB = 20
10
V BE, BASE EMITTER VOLTAGE (VOLTS)
V BE, BASE EMITTER VOLTAGE (VOLTS)
10
1.0
10
-55°C
25°C
150°C
0.1
1.0
-55°C
25°C
150°C
0.1
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
10
0.1
Figure 12. NPN − MJE15032
VBE(sat) IC/IB = 10
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 13. PNP − MJE15033
VBE(sat) IC/IB = 10
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5
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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