MJE15034 (NPN),
MJE15035 (PNP)
Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
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Complementary silicon plastic power transistors are designed for
use as high−frequency drivers in audio amplifiers.
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
350 VOLTS, 50 WATTS
Features
•
•
•
•
High Current Gain − Bandwidth Product
TO−220 Compact Package
Epoxy meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
COMPLEMENTARY
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
350
Vdc
Collector−Base Voltage
VCB
350
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
4.0
Adc
Collector−Emitter Voltage
Collector Current − Continuous
Collector Current − Peak
ICM
8.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
50
0.40
W
W/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
–65 to +150
_C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
1
BASE
3
EMITTER
3
EMITTER
MARKING
DIAGRAM
4
TJ, Tstg
Operating and Storage Junction
Temperature Range
1
BASE
COLLECTOR
2, 4
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
TO−220
CASE 221A
STYLE 1
1
2
MJE1503xG
AYWW
3
MJE1503x = Device Code
x = 4 or 5
A
= Location Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE15034G
TO−220
(Pb−Free)
50 Units / Rail
MJE15035G
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1
Publication Order Number:
MJE15034/D
MJE15034 (NPN), MJE15035 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
350
−
Vdc
OFF CHARACTERISTICS
(IC = 10 mAdc, IB = 0)
Collector−Emitter Sustaining Voltage (Note 1)
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
ICBO
−
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
10
mAdc
100
100
50
10
−
−
−
−
−
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 0.1 Adc, VCE = 5.0 Vdc)
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
0.5
Vdc
(IC = 1.0 Adc, VCE = 5.0 Vdc)
VBE(on)
−
1.0
Vdc
30
−
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = ⎪hfe⎪• ftest.
10
IC, COLLECTOR CURRENT (AMPS)
PD, POWER DISSIPATION (WATTS)
TA TC
3.0 60
2.0 40
TC
TA
1.0 20
0
0
0
20
40
60
80
100
120
140
160
100mS
DC
1.0
0.1
0.01
1.0
T, TEMPERATURE (°C)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 1. Power Derating
1.0
0.7
0.5
0.3
Figure 2. Active Region Safe Operating Area
0.1
0.02
0.01
SINGLE PULSE
0.02
0.05
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.03
0.01
0.01
1000
0.2
0.1
0.02
100
D = 0.5
0.2
0.07
0.05
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
Figure 3. Thermal Response
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2
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500 1.0 k
MJE15034 (NPN), MJE15035 (PNP)
1000
1000
TJ = 150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
100
−40°C
10
1.0
0.01
0.1
1.0
25°C
−40°C
100
10
1.0
0.01
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, VCE = 5.0 V
NPN MJE15034
Figure 5. DC Current Gain, VCE = 5.0 V
PNP MJE15035
1000
10
1000
TJ = 150°C
100
hFE, DC CURRENT GAIN
25°C
−40°C
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1.0
0.01
0.1
1.0
100
10
1.0
0.01
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 20 V
NPN MJE15034
Figure 7. DC Current Gain, VCE = 20 V
PNP MJE15035
10
IC/IB = 10
1.0
25°C
TJ = 150°C
0.1
−40°C
0.01
0.01
25°C
−40°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
TJ = 150°C
0.1
1.0
10
10
IC/IB = 10
1.0
−40°C
0.1
TJ = 150°C
25°C
0.01
0.01
IC, COLLECTOR CURRENT (AMPS)
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. VCE(sat)
PNP MJE15035
Figure 8. VCE(sat)
NPN MJE15034
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3
10
10
MJE15034 (NPN), MJE15035 (PNP)
10
IC/IB = 10
1.0
BASE−EMITTER VOLTAGE (V)
BASE−EMITTER VOLTAGE (V)
10
−40°C
25°C
TJ = 150°C
0.1
0.01
0.1
1.0
IC/IB = 10
−40°C
1.0
25°C
TJ = 150°C
0.1
0.01
10
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 11. VBE(sat)
PNP MJE15035
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1.2
1.0
−40°C
0.6
25°C
0.4
TJ = 150°C
0.2
0.0
0.01
0.1
1.0
10
1.4
1.2
1.0
−40°C
0.8
0.6
25°C
0.4
TJ = 150°C
0.2
0.0
0.01
IC, COLLECTOR CURRENT (AMPS)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
TJ = 25°C
f test = 1 MHz
50
40
30
VCE= 10 V
20
10
0
0.001
0.01
0.1
1.0
10
Figure 13. VBE(on)
PNP MJE15035
80
60
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 12. VBE(on)
NPN MJE15034
70
10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. VBE(sat)
NPN MJE15034
0.8
1.0
1.0
10
100
80
TJ = 25°C
f test = 1 MHz
60
40
VCE= 10 V
20
0
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 15. Typical Current Gain Bandwidth Product
PNP MJE15035
Figure 14. Typical Current Gain Bandwidth Product
NPN MJE15034
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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