MJE170G, MJE171G,
MJE172G (PNP), MJE180G,
MJE181G, MJE182G (NPN)
Complementary Plastic
Silicon Power Transistors
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
Features
•
•
•
•
•
High DC Current Gain
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakages
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
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3 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
40 − 60 − 80 VOLTS
12.5 WATTS
MAXIMUM RATINGS
Rating
Symbol
Collector−Base Voltage
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
Collector−Emitter Voltage
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
Value
Unit
VCB
NPN
COLLECTOR
2, 4
COLLECTOR
2, 4
Vdc
60
80
100
3
BASE
VCEO
3
BASE
Vdc
40
60
80
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
1
EMITTER
VEB
7.0
Vdc
IC
3.0
Adc
ICM
6.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
12.5
0.012
W
W/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
1.5
0.1
W
W/_C
TJ, Tstg
−65 to +150
_C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Operating and Storage Junction
Temperature Range
PNP
1
EMITTER
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
JE1xxG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
JE1xx
G
= Year
= Work Week
= Specific Device Code
x = 70, 71, 72, 80, 81, or 82
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 13
1
Publication Order Number:
MJE171/D
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
10
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.4
_C/W
Min
Max
Unit
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0)
MJE170G, MJE180G
MJE171G, MJE181G
MJE172G, MJE182G
VCEO(sus)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
MJE170G, MJE180G
(VCB = 80 Vdc, IE = 0)
MJE171G, MJE181G
(VCB = 100 Vdc, IE = 0)
MJE172G, MJE182G
(VCB = 60 Vdc, IE = 0, TC = 150°C)
MJE170G, MJE180G
(VCB = 80 Vdc, IE = 0, TC = 150°C)
MJE171G, MJE181G
(VCB = 100 Vdc, IE = 0, TC = 150°C)
MJE172G, MJE182G
ICBO
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
Vdc
40
60
80
−
−
−
−
0.1
−
0.1
−
0.1
−
0.1
−
0.1
−
0.1
50
30
12
250
−
−
−
−
−
0.3
0.9
1.7
−
−
1.5
2.0
−
1.2
50
−
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.5 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.5 Adc, IB = 150 mAdc)
(IC = 3.0 Adc, IB = 600 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 150 mAdc)
(IC = 3.0 Adc, IB = 600 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 1)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJE171G/MJE172G
MJE181G/MJE182G
Cob
MHz
pF
−
−
60
40
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. fT = ⎪hfe⎪• ftest.
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2
PD, POWER DISSIPATION (WATTS)
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
TA
2.8
TC
14
2.4
12
2.0
10
1.6 8.0
TC
1.2 6.0
0.8 4.0
TA
0.4 2.0
0
0
20
40
80
60
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
VCC
+30 V
1K
500
300
200
RC
25 ms
+11 V
SCOPE
RB
t, TIME (ns)
D1
51
tr
100
0
-9.0 V
tr, tf ≤ 10 ns
-4 V
DUTY CYCLE =
1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
50
30
20
td
10
5
3
2
NPN MJE181/182
PNP MJE171/172
1
1
2
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.03
3
5
10
Figure 3. Turn−On Time
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
VCE = 30 V
IC/IB = 10
VBE(off) = 4.0 V
TJ = 25°C
qJC(t) = r(t) qJC
qJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.02
0.01
0 (SINGLE PULSE)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
Figure 4. Thermal Response
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3
10
20
50
100
200
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
ACTIVE−REGION SAFE OPERATING AREA
10
5.0
5.0
100ms
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
10
500ms
2.0
1.0
dc
0.5
0.2
0.1
0.05
0.02
0.01
1.0
5.0ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
MJE171
MJE172
2.0 3.0
5.0
10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100ms
2.0
500ms
1.0
5.0ms
0.5
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
MJE181
RATED VCEO
MJE182
0.2
0.1
0.05
0.02
0.01
1.0
100
2.0 3.0
5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. MJE171, MJE172
Figure 6. MJE181, MJE182
The data of Figures 5 and 6 is based on TJ(pk) = 150°C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) < 150°C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperature, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
There are two limitations on the power handling ability of
a transistor − average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
10K
100
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
1K
500
300
200
ts
100
tf
50
30
20
PNP MJE171/MJE172
NPN MJE181/MJE182
70
C, CAPACITANCE (pF)
5K
3K
2K
t, TIME (ns)
dc
50
Cib
30
20
Cob
NPN MJE181/182
PNP MJE171/172
10
10
0.01
0.02 0.03 0.05 0.1 0.2 0.3
TJ = 25°C
0.5
1
2
3
5
10
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMPS)
2.0 3.0
5.0 7.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
Figure 7. Turn−Off Time
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4
30
50
MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)
ORDERING INFORMATION
Package
Shipping
MJE170G
Device
TO−225
(Pb−Free)
500 Units / Box
MJE171G
TO−225
(Pb−Free)
500 Units / Box
MJE172G
TO−225
(Pb−Free)
500 Units / Box
MJE180G
TO−225
(Pb−Free)
500 Units / Box
MJE181G
TO−225
(Pb−Free)
500 Units / Box
MJE182G
TO−225
(Pb−Free)
500 Units / Box
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
4
DATE 25 MAR 2015
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
2X
e
b
FRONT VIEW
Y
= Year
WW
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
c
SIDE VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
STYLE 2:
PIN 1. CATHODE
2., 4. ANODE
3. GATE
STYLE 3:
PIN 1. BASE
2., 4. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. ANODE 1
2., 4. ANODE 2
3. GATE
STYLE 5:
PIN 1. MT 1
2., 4. MT 2
3. GATE
STYLE 6:
PIN 1. CATHODE
2., 4. GATE
3. ANODE
STYLE 7:
PIN 1. MT 1
2., 4. GATE
3. MT 2
STYLE 8:
PIN 1. SOURCE
2., 4. GATE
3. DRAIN
STYLE 9:
PIN 1. GATE
2., 4. DRAIN
3. SOURCE
STYLE 10:
PIN 1. SOURCE
2., 4. DRAIN
3. GATE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO−225
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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