MJE18004, MJF18004
Switch-mode NPN Bipolar
Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004 have an applications specific state−of−the−art
die designed for use in 220 V line−operated switch−mode Power
supplies and electronic light ballasts.
www.onsemi.com
Features
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
• Improved Efficiency Due to Low Base Drive Requirements:
•
•
•
•
•
♦
♦
♦
High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Full Characterization at 125_C
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
Two Package Choices: Standard TO−220 or Isolated TO−220
MJF18004, Case 221D, is UL Recognized at 3500 VRMS: File
#E69369
These Devices are Pb−Free and are RoHS Compliant*
COLLECTOR
2,4
1
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
450
Vdc
Collector−Base Breakdown Voltage
VCES
1000
Vdc
Emitter−Base Voltage
VEBO
9.0
Vdc
Collector Current
− Continuous
Collector Current
− Peak (Note 1)
Base Current
− Continuous
Base Current
− Peak (Note 1)
IC
5.0
Adc
ICM
10
Adc
IB
2.0
Adc
IBM
4.0
Adc
RMS Isolation Voltage (Note 2)
Test No. 1 Per Figure 22a
Test No. 2 Per Figure 22b
Test No. 3 Per Figure 22c
(for 1 sec, R.H. < 30%, TA = 25_C)
VISOL
MJF18004
4500
3500
1500
V
Total Device Dissipation @ TC = 25_C
MJE18004
MJF18004
Derate above 25°C
MJE18004
MJF18004
PD
Operating and Storage Temperature
−65 to 150
Max
4
MJE18004G
AYWW
1
2
3
W
W/_C
75
35
0.6
0.28
TJ, Tstg
MARKING
DIAGRAMS
_C
1
2
TO−220AB
CASE 221A−09
STYLE 1
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
MJF18004G
AYWW
3
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction−to−Case
MJE18004
MJF18004
RqJC
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260
_C
_C/W
1.65
3.55
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2. Proper strike and creepage distance must be provided.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12
1
G
A
Y
WW
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJE18004/D
MJE18004, MJF18004
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
−
−
Vdc
ICEO
−
−
100
mAdc
ICES
−
−
−
−
−
−
100
500
100
mAdc
IEBO
−
−
100
mAdc
Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.4 Adc)
VBE(sat)
−
−
0.82
0.92
1.1
1.25
Vdc
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
−
−
−
−
0.25
0.29
0.3
0.36
0.5
0.5
0.6
0.45
0.8
0.75
hFE
12
−
14
−
6.0
−
10
21
20
−
32
11
7.5
22
−
−
34
−
−
−
−
−
fT
−
13
−
MHz
Cob
−
50
65
pF
Cib
−
800
1000
pF
VCE(dsat)
6.8
14
−
−
Vdc
(TC = 125°C)
−
−
(TC = 125°C)
−
−
2.4
5.6
−
−
(TC = 125°C)
−
−
11.3
15.5
−
−
(TC = 125°C)
−
−
1.3
6.1
−
−
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 25_C)
(TC = 125_C)
(TC = 125_C)
Collector Cutoff Current (VCE = 800 V, VEB = 0)
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
ON CHARACTERISTICS
(TC = 125_C)
(IC = 2.0 Adc, IB = 0.4 Adc)
(TC = 125_C)
(IC = 2.5 Adc, IB = 0.5 Adc)
DC Current Gain (IC = 1.0 Adc, VCE = 2.5 Vdc)
(TC = 125_C)
DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 8.0 V)
Dynamic Saturation Voltage:
Determined 1.0 ms and
3.0 ms respectively after
rising IB1 reaches 90% of
final IB1
(see Figure 18)
(IC = 1.0 Adc
IB1 = 100 mAdc
VCC = 300 V)
(IC = 2.0 Adc
IB1 = 400 mAdc
VCC = 300 V)
1.0 ms
3.0 ms
1.0 ms
3.0 ms
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2
MJE18004, MJF18004
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ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
ton
−
−
210
180
300
−
ns
toff
−
−
1.0
1.3
1.7
−
ms
ton
−
−
75
90
110
−
ns
toff
−
−
1.5
1.8
2.5
−
ms
ton
−
−
450
900
800
1400
ns
ts
−
−
2.0
2.2
3.0
3.5
ms
tf
−
−
275
500
400
800
ns
tfi
−
−
100
100
150
−
ns
tsi
−
−
1.1
1.4
1.7
−
ms
tc
−
−
180
160
250
−
ns
tfi
−
−
90
150
175
−
ns
tsi
−
−
1.7
2.2
2.5
−
ms
tc
−
−
180
250
300
−
ns
tfi
−
−
70
100
130
175
ns
tsi
−
−
0.75
1.0
1.0
1.3
ms
tc
−
−
250
250
350
500
ns
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)
Turn−On Time
(IC = 1.0 Adc, IB1 = 0.1 Adc,
IB2 = 0.5 Adc, VCC = 300 V)
(TC = 125°C)
Turn−Off Time
(TC = 125°C)
Turn−On Time
(IC = 2.0 Adc, IB1 = 0.4 Adc,
IB1 = 1.0 Adc, VCC = 300 V)
(TC = 125°C)
Turn−Off Time
(TC = 125°C)
Turn−On Time
(IC = 2.5 Adc, IB1 = 0.5 Adc,
IB2 = 0.5 Adc, VCC = 250 V)
(TC = 125°C)
Storage Time
(TC = 125°C)
Fall Time
(TC = 125°C)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
(IC = 1.0 Adc, IB1 = 0.1 Adc,
IB2 = 0.5 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
(IC = 2.0 Adc, IB1 = 0.4 Adc,
IB2 = 1.0 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
Storage Time
(IC = 2.5 Adc, IB1 = 0.5 Adc,
IB2 = 0.5 Adc,
VBE(off) = −5.0 Vdc)
(TC = 125°C)
(TC = 125°C)
Crossover Time
(TC = 125°C)
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3
MJE18004, MJF18004
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 1 V
VCE = 5 V
TJ = 125°C
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
TJ = 125°C
TJ = -20°C
TJ = 25°C
10
1
0.01
1.00
0.10
TJ = -20°C
1
0.01
10.00
TJ = 25°C
10
0.10
1.00
10.00
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2.0
10.00
1.5
1.5 A
2A
3A
V CE , VOLTAGE (VOLTS)
V CE , VOLTAGE (VOLTS)
TJ = 25°C
4A
1.0
1A
0.5
1.00
IC/IB = 10
0.10
IC/IB = 5
TJ = 25°C
TJ = 125°C
IC = 0.5 A
0
0.01
0.10
1.00
0.01
0.01
10.00
Figure 4. Collector−Emitter Saturation Voltage
10000
TJ = 25°C
f = 1 MHz
Cib
1000
0.9
C, CAPACITANCE (pF)
V BE , VOLTAGE (VOLTS)
10.00
Figure 3. Collector Saturation Region
1.0
0.8
TJ = 25°C
0.6
TJ = 125°C
Cob
100
10
IC/IB = 10
IC/IB = 5
0.5
0.4
0.01
1.00
IC, COLLECTOR CURRENT (AMPS)
1.1
0.7
0.10
IB, BASE CURRENT (AMPS)
0.10
1.00
1
10.00
1
10
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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4
100
MJE18004, MJF18004
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1800
3000
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
1600
1400
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
2000
IC/IB = 5
1000
IC/IB = 10
800
TJ = 25°C
TJ = 125°C
2500
t, TIME (ns)
t, TIME (ns)
1200
IC/IB = 5
600
IC/IB = 10
1500
1000
400
500
200
0
0
0
1
2
4
3
5
0
3
5
4
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
3500
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 mH
IC/IB = 5
2500
TJ = 25°C
TJ = 125°C
3000
t si, STORAGE TIME (ns)
3000
t, TIME (ns)
2
IC, COLLECTOR CURRENT (AMPS)
3500
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 mH
2500
2000
2000
1500
1000
TJ = 25°C
TJ = 125°C
500
0
IC = 2 A
1500
1000
0
IC/IB = 10
3
4
2
IC COLLECTOR CURRENT (AMPS)
1
500
5
IC = 1 A
3
Figure 9. Inductive Storage Time, tsi
4
5
6
7
8
9 10 11
hFE, FORCED GAIN
13
12
14
15
Figure 10. Inductive Storage Time, tsi(hFE)
300
250
TJ = 25°C
TJ = 125°C
250
200
tfi
tc
t, TIME (ns)
200
t, TIME (ns)
1
150
150
tc
100
100
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 mH
50
0
0
1
TJ = 25°C
TJ = 125°C
2
3
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 mH
50
4
0
5
0
IC, COLLECTOR CURRENT (AMPS)
1
tfi
2
3
4
5
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc and tfi, IC/IB = 5
Figure 12. Inductive Switching, tc and tfi, IC/IB = 10
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5
MJE18004, MJF18004
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
300
160
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 mH
150
t fi , FALL TIME (ns)
140
IC = 2 A
130
IC = 1 A
250
t c , CROSSOVER TIME (ns)
TJ = 25°C
TJ = 125°C
120
110
100
90
200
150
IC = 2 A
100
TJ = 25°C
TJ = 125°C
80
70
IC = 1 A
3
4
5
6
7
8
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 mH
9
10
11
12
13
14
50
15
3
4
5
6
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
7
8
9 10 11
hFE, FORCED GAIN
12
13
14
15
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
6.0
DC (MJE18004)
5ms
10
1ms
50ms
I C, COLLECTOR CURRENT (AMPS)
I C, COLLECTOR CURRENT (AMPS)
100
10ms 1ms
Extended
SOA
1.0
DC (MJF18004)
0.1
0.01
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
POWER DERATING FACTOR
0.6
0.4
THERMAL
DERATING
0
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
2.0
1.0
VBE(off) =
0V
500
-5 V
-1.5 V
600
700
800
900
1000
1100
Figure 16. Reverse Bias Safe Operating Area
SECOND
BREAKDOWN
DERATING
20
3.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.2
4.0
0
400
1000
Figure 15. Forward Bias Safe Operating Area
0.8
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 mH
5.0
140
160
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC−VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown
limitations do not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 15 may be found at any case
temperature by using the appropriate curve on Figure 17. TJ(pk) may
be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled
to values less the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse biased. The safe level is specified as a reverse−biased safe operating
area (Figure 16). This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
www.onsemi.com
6
MJE18004, MJF18004
10
5
4
VCE
dyn 1 ms
3
8
2
VOLTS
90% IC
tfi
IC
9
tsi
7
dyn 3 ms
1
6
0
5
tc
VCLAMP
10% IC
10% VCLAMP
4
-1
90% IB
-2
1 ms
-3
-4
90% IB1
2
3 ms
IB
-5
0
IB
3
1
0
1
2
3
4
TIME
5
6
7
0
8
Figure 18. Dynamic Saturation Voltage Measurements
1
2
3
4
TIME
5
6
7
8
Figure 19. Inductive Switching Measurements
+15 V
1 mF
150 W
3W
100 W
3W
IC PEAK
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
Iout
MPF930
+10 V
IB
A
IB2
50 W
RB2
MJE210
COMMON
500 mF
150 W
3W
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
-Voff
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
www.onsemi.com
7
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
MJE18004, MJF18004
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TYPICAL THERMAL RESPONSE
1.00
D = 0.5
0.2
P(pk)
0.10
0.1
t1
0.05
0.02
0.01
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.10
1.00
10.00
100.00
RqJC(t) = r(t) RqJC
RqJC = 1.25°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
1000
10000
100000
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18004
1.00
D = 0.5
0.2
0.10
P(pk)
0.1
0.05
t1
0.02
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.10
1.00
10.00
RqJC(t) = r(t) RqJC
RqJC = 3.12°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
100.00
t, TIME (ms)
Figure 21. Typical Thermal Response for MJF18004
ORDERING INFORMATION
Device
Package
Shipping
MJE18004G
TO−220AB
(Pb−Free)
50 Units / Rail
MJF18004G
TO−220 (Fullpack)
(Pb−Free)
50 Units / Rail
www.onsemi.com
8
1000
MJE18004, MJF18004
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
MOUNTED
FULLY ISOLATED
PACKAGE
0.099″ MIN
LEADS
LEADS
HEATSINK
HEATSINK
0.099″ MIN
0.110″ MIN
Figure 22a. Screw or Clip Mounting
Position for Isolation Test Number 1
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw−Mounted
Figure 23b. Clip−Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a
screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain
a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the
package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
www.onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
C
S
Q
SCALE 1:1
SEATING
PLANE
U
1 2 3
−Y−
K
G
N
L
D
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. CATHODE
STYLE 5:
PIN 1. CATHODE
2. ANODE
3. GATE
J
R
3 PL
0.25 (0.010)
M
B
M
Y
DESCRIPTION:
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
MARKING
DIAGRAMS
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
STYLE 6:
PIN 1. MT 1
2. MT 2
3. GATE
xxxxxx
G
A
Y
WW
DOCUMENT NUMBER:
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
H
DATE 27 FEB 2009
98ASB42514B
TO−220 FULLPAK
xxxxxxG
AYWW
AYWW
xxxxxxG
AKA
Bipolar
Rectifier
= Specific Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
A
Y
WW
xxxxxx
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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