MJE18004G

MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state−of−the−art die designed for use in 220 V line−operated switch−mode Power supplies and electronic light ballasts. www.onsemi.com Features POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS • Improved Efficiency Due to Low Base Drive Requirements: • • • • • ♦ ♦ ♦ High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Turn−Off (No Current Tail) Full Characterization at 125_C ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions Two Package Choices: Standard TO−220 or Isolated TO−220 MJF18004, Case 221D, is UL Recognized at 3500 VRMS: File #E69369 These Devices are Pb−Free and are RoHS Compliant* COLLECTOR 2,4 1 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 450 Vdc Collector−Base Breakdown Voltage VCES 1000 Vdc Emitter−Base Voltage VEBO 9.0 Vdc Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Base Current − Peak (Note 1) IC 5.0 Adc ICM 10 Adc IB 2.0 Adc IBM 4.0 Adc RMS Isolation Voltage (Note 2) Test No. 1 Per Figure 22a Test No. 2 Per Figure 22b Test No. 3 Per Figure 22c (for 1 sec, R.H. < 30%, TA = 25_C) VISOL MJF18004 4500 3500 1500 V Total Device Dissipation @ TC = 25_C MJE18004 MJF18004 Derate above 25°C MJE18004 MJF18004 PD Operating and Storage Temperature −65 to 150 Max 4 MJE18004G AYWW 1 2 3 W W/_C 75 35 0.6 0.28 TJ, Tstg MARKING DIAGRAMS _C 1 2 TO−220AB CASE 221A−09 STYLE 1 TO−220 FULLPACK CASE 221D STYLE 2 UL RECOGNIZED MJF18004G AYWW 3 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction−to−Case MJE18004 MJF18004 RqJC Unit Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C _C/W 1.65 3.55 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. 2. Proper strike and creepage distance must be provided. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 12 1 G A Y WW = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: MJE18004/D MJE18004, MJF18004 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified) Symbol Min Typ Max Unit VCEO(sus) 450 − − Vdc ICEO − − 100 mAdc ICES − − − − − − 100 500 100 mAdc IEBO − − 100 mAdc Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.4 Adc) VBE(sat) − − 0.82 0.92 1.1 1.25 Vdc Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − − − − − 0.25 0.29 0.3 0.36 0.5 0.5 0.6 0.45 0.8 0.75 hFE 12 − 14 − 6.0 − 10 21 20 − 32 11 7.5 22 − − 34 − − − − − fT − 13 − MHz Cob − 50 65 pF Cib − 800 1000 pF VCE(dsat) 6.8 14 − − Vdc (TC = 125°C) − − (TC = 125°C) − − 2.4 5.6 − − (TC = 125°C) − − 11.3 15.5 − − (TC = 125°C) − − 1.3 6.1 − − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 25_C) (TC = 125_C) (TC = 125_C) Collector Cutoff Current (VCE = 800 V, VEB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS (TC = 125_C) (IC = 2.0 Adc, IB = 0.4 Adc) (TC = 125_C) (IC = 2.5 Adc, IB = 0.5 Adc) DC Current Gain (IC = 1.0 Adc, VCE = 2.5 Vdc) (TC = 125_C) DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc) (TC = 125_C) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 125_C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) Dynamic Saturation Voltage: Determined 1.0 ms and 3.0 ms respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.0 Adc IB1 = 100 mAdc VCC = 300 V) (IC = 2.0 Adc IB1 = 400 mAdc VCC = 300 V) 1.0 ms 3.0 ms 1.0 ms 3.0 ms www.onsemi.com 2 MJE18004, MJF18004 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise specified) Characteristic Symbol Min Typ Max Unit ton − − 210 180 300 − ns toff − − 1.0 1.3 1.7 − ms ton − − 75 90 110 − ns toff − − 1.5 1.8 2.5 − ms ton − − 450 900 800 1400 ns ts − − 2.0 2.2 3.0 3.5 ms tf − − 275 500 400 800 ns tfi − − 100 100 150 − ns tsi − − 1.1 1.4 1.7 − ms tc − − 180 160 250 − ns tfi − − 90 150 175 − ns tsi − − 1.7 2.2 2.5 − ms tc − − 180 250 300 − ns tfi − − 70 100 130 175 ns tsi − − 0.75 1.0 1.0 1.3 ms tc − − 250 250 350 500 ns SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms) Turn−On Time (IC = 1.0 Adc, IB1 = 0.1 Adc, IB2 = 0.5 Adc, VCC = 300 V) (TC = 125°C) Turn−Off Time (TC = 125°C) Turn−On Time (IC = 2.0 Adc, IB1 = 0.4 Adc, IB1 = 1.0 Adc, VCC = 300 V) (TC = 125°C) Turn−Off Time (TC = 125°C) Turn−On Time (IC = 2.5 Adc, IB1 = 0.5 Adc, IB2 = 0.5 Adc, VCC = 250 V) (TC = 125°C) Storage Time (TC = 125°C) Fall Time (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time (IC = 1.0 Adc, IB1 = 0.1 Adc, IB2 = 0.5 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 2.0 Adc, IB1 = 0.4 Adc, IB2 = 1.0 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time Storage Time (IC = 2.5 Adc, IB1 = 0.5 Adc, IB2 = 0.5 Adc, VBE(off) = −5.0 Vdc) (TC = 125°C) (TC = 125°C) Crossover Time (TC = 125°C) www.onsemi.com 3 MJE18004, MJF18004 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V VCE = 5 V TJ = 125°C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN TJ = 125°C TJ = -20°C TJ = 25°C 10 1 0.01 1.00 0.10 TJ = -20°C 1 0.01 10.00 TJ = 25°C 10 0.10 1.00 10.00 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2.0 10.00 1.5 1.5 A 2A 3A V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) TJ = 25°C 4A 1.0 1A 0.5 1.00 IC/IB = 10 0.10 IC/IB = 5 TJ = 25°C TJ = 125°C IC = 0.5 A 0 0.01 0.10 1.00 0.01 0.01 10.00 Figure 4. Collector−Emitter Saturation Voltage 10000 TJ = 25°C f = 1 MHz Cib 1000 0.9 C, CAPACITANCE (pF) V BE , VOLTAGE (VOLTS) 10.00 Figure 3. Collector Saturation Region 1.0 0.8 TJ = 25°C 0.6 TJ = 125°C Cob 100 10 IC/IB = 10 IC/IB = 5 0.5 0.4 0.01 1.00 IC, COLLECTOR CURRENT (AMPS) 1.1 0.7 0.10 IB, BASE CURRENT (AMPS) 0.10 1.00 1 10.00 1 10 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance www.onsemi.com 4 100 MJE18004, MJF18004 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1800 3000 IB(off) = IC/2 VCC = 300 V PW = 20 ms 1600 1400 TJ = 25°C TJ = 125°C IB(off) = IC/2 VCC = 300 V PW = 20 ms 2000 IC/IB = 5 1000 IC/IB = 10 800 TJ = 25°C TJ = 125°C 2500 t, TIME (ns) t, TIME (ns) 1200 IC/IB = 5 600 IC/IB = 10 1500 1000 400 500 200 0 0 0 1 2 4 3 5 0 3 5 4 IC, COLLECTOR CURRENT (AMPS) Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 3500 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH IC/IB = 5 2500 TJ = 25°C TJ = 125°C 3000 t si, STORAGE TIME (ns) 3000 t, TIME (ns) 2 IC, COLLECTOR CURRENT (AMPS) 3500 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH 2500 2000 2000 1500 1000 TJ = 25°C TJ = 125°C 500 0 IC = 2 A 1500 1000 0 IC/IB = 10 3 4 2 IC COLLECTOR CURRENT (AMPS) 1 500 5 IC = 1 A 3 Figure 9. Inductive Storage Time, tsi 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 13 12 14 15 Figure 10. Inductive Storage Time, tsi(hFE) 300 250 TJ = 25°C TJ = 125°C 250 200 tfi tc t, TIME (ns) 200 t, TIME (ns) 1 150 150 tc 100 100 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH 50 0 0 1 TJ = 25°C TJ = 125°C 2 3 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH 50 4 0 5 0 IC, COLLECTOR CURRENT (AMPS) 1 tfi 2 3 4 5 IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi, IC/IB = 5 Figure 12. Inductive Switching, tc and tfi, IC/IB = 10 www.onsemi.com 5 MJE18004, MJF18004 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 300 160 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH 150 t fi , FALL TIME (ns) 140 IC = 2 A 130 IC = 1 A 250 t c , CROSSOVER TIME (ns) TJ = 25°C TJ = 125°C 120 110 100 90 200 150 IC = 2 A 100 TJ = 25°C TJ = 125°C 80 70 IC = 1 A 3 4 5 6 7 8 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH 9 10 11 12 13 14 50 15 3 4 5 6 hFE, FORCED GAIN Figure 13. Inductive Fall Time 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 6.0 DC (MJE18004) 5ms 10 1ms 50ms I C, COLLECTOR CURRENT (AMPS) I C, COLLECTOR CURRENT (AMPS) 100 10ms 1ms Extended SOA 1.0 DC (MJF18004) 0.1 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) POWER DERATING FACTOR 0.6 0.4 THERMAL DERATING 0 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 2.0 1.0 VBE(off) = 0V 500 -5 V -1.5 V 600 700 800 900 1000 1100 Figure 16. Reverse Bias Safe Operating Area SECOND BREAKDOWN DERATING 20 3.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.2 4.0 0 400 1000 Figure 15. Forward Bias Safe Operating Area 0.8 TC ≤ 125°C IC/IB ≥ 4 LC = 500 mH 5.0 140 160 Figure 17. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse biased. The safe level is specified as a reverse−biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. www.onsemi.com 6 MJE18004, MJF18004 10 5 4 VCE dyn 1 ms 3 8 2 VOLTS 90% IC tfi IC 9 tsi 7 dyn 3 ms 1 6 0 5 tc VCLAMP 10% IC 10% VCLAMP 4 -1 90% IB -2 1 ms -3 -4 90% IB1 2 3 ms IB -5 0 IB 3 1 0 1 2 3 4 TIME 5 6 7 0 8 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 Iout MPF930 +10 V IB A IB2 50 W RB2 MJE210 COMMON 500 mF 150 W 3W MTP12N10 1 mF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA -Voff INDUCTIVE SWITCHING L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit www.onsemi.com 7 RBSOA L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 MJE18004, MJF18004 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL THERMAL RESPONSE 1.00 D = 0.5 0.2 P(pk) 0.10 0.1 t1 0.05 0.02 0.01 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.10 1.00 10.00 100.00 RqJC(t) = r(t) RqJC RqJC = 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1000 10000 100000 t, TIME (ms) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18004 1.00 D = 0.5 0.2 0.10 P(pk) 0.1 0.05 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.10 1.00 10.00 RqJC(t) = r(t) RqJC RqJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 100.00 t, TIME (ms) Figure 21. Typical Thermal Response for MJF18004 ORDERING INFORMATION Device Package Shipping MJE18004G TO−220AB (Pb−Free) 50 Units / Rail MJF18004G TO−220 (Fullpack) (Pb−Free) 50 Units / Rail www.onsemi.com 8 1000 MJE18004, MJF18004 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE 0.099″ MIN LEADS LEADS HEATSINK HEATSINK 0.099″ MIN 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 23a. Screw−Mounted Figure 23b. Clip−Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F C S Q SCALE 1:1 SEATING PLANE U 1 2 3 −Y− K G N L D STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 4: PIN 1. CATHODE 2. ANODE 3. CATHODE STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE J R 3 PL 0.25 (0.010) M B M Y DESCRIPTION: INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MARKING DIAGRAMS STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. MT 1 2. MT 2 3. GATE xxxxxx G A Y WW DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U A H DATE 27 FEB 2009 98ASB42514B TO−220 FULLPAK xxxxxxG AYWW AYWW xxxxxxG AKA Bipolar Rectifier = Specific Device Code = Pb−Free Package = Assembly Location = Year = Work Week A Y WW xxxxxx G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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