MJE200G(NPN),
MJE210G(PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low voltage, low−power, high−gain
audio amplifier applications.
Features
•
•
•
•
•
5.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS, 15 WATTS
High DC Current Gain
Low Collector−Emitter Saturation Voltage
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCB
25
Vdc
Emitter−Base Voltage
VEB
8.0
Vdc
IC
5.0
Adc
ICM
10
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
15
0.12
W
mW/_C
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
1.5
0.012
W
mW/_C
–65 to +150
_C
Collector Current − Continuous
Collector Current − Peak
Operating and Storage Junction
Temperature Range
TJ, Tstg
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PNP
NPN
COLLECTOR 2, 4
COLLECTOR 2, 4
3
BASE
3
BASE
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
JE2x0G
THERMAL CHARACTERISTICS
Characteristic
EMITTER 1
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
8.34
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.4
_C/W
Y
= Year
WW
= Work Week
JE2x0 = Device Code
x = 0 or 1
G
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
Device
Package
Shipping
MJE200G
TO−225
(Pb−Free)
500 Units / Box
MJE210G
TO−225
(Pb−Free)
500 Units / Box
MJE210TG
TO−225
(Pb−Free)
500 Units / Box
Publication Order Number:
MJE200/D
MJE200G (NPN), MJE210G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
25
−
−
−
100
100
−
100
70
45
10
−
180
−
−
−
−
0.3
0.75
1.8
−
2.5
−
1.6
65
−
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125_C)
ICBO
Emitter Cutoff Current
(VBE = 8.0 Vdc, IC = 0)
IEBO
Vdc
nAdc
mAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 5.0 Adc, VCE = 2.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 1)
(IC = 5.0 Adc, IB = 1.0 Adc)
VBE(sat)
Base−Emitter On Voltage (Note 1)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
VBE(on)
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product (Note 2)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJE200G
MJE210G
MHz
Cob
pF
−
−
80
120
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
100
80
120
T, TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
0
160
TA
PD, POWER DISSIPATION (WATTS)
TC
PD, POWER DISSIPATION (WATTS)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300Ăms, Duty Cycle [ 2.0%.
2. fT = ⎪hfe⎪• ftest.
MJE200G (NPN), MJE210G (PNP)
VCC
+30 V
1K
500
300
200
RC
25 ms
+11 V
SCOPE
RB
100
t, TIME (ns)
0
D1
51
-9.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
td
-4 V
50
30
20
tr
10
5
3
2
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
MJE200
MJE210
1
1
2
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
D = 0.5
0.3
0.2
0.2
0.1
qJC(t) = r(t) qJC
qJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.1
0.07
0.05
0.02
0.01
0.03
3
5
10
Figure 3. Turn−On Time
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
VCC = 30 V
IC/IB = 10
TJ = 25°C
0 (SINGLE PULSE)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
100
200
IC, COLLECTOR CURRENT (AMP)
Figure 4. Thermal Response
10
7.0
5.0
3.0
1.0ms
dc
500ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
100ms
5.0ms
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
2.0
3.0
5.0 7.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
30
Figure 5. Active Region Safe Operating Area
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3
MJE200G (NPN), MJE210G (PNP)
10K
200
ts
t, TIME (ns)
1K
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
TJ = 25°C
C, CAPACITANCE (pF)
5K
3K
2K
500
300
200
100
tf
50
30
20
MJE200
MJE210
10
0.01
Cib
100
70
50
Cob
MJE200 (NPN)
MJE210 (PNP)
30
0.2 0.3 0.5
1
2 3
0.02 0.03 0.05 0.1
IC, COLLECTOR CURRENT (AMPS)
5
20
0.4 0.6
10
1.0
2.0
4.0 6.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time
400
25°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
PNP
MJE210
TJ = 150°C
200
-55°C
100
80
60
40
VCE = 1.0 V
VCE = 2.0 V
20
0.05 0.07 0.1
40
Figure 7. Capacitance
NPN
MJE200
400
20
TJ = 150°C
200
25°C
100
80
-55°C
60
40
VCE = 1.0 V
VCE = 2.0 V
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
3.0
20
0.05 0.07 0.1
5.0
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
3.0
5.0
Figure 8. DC Current Gain
2.0
2.0
TJ = 25°C
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0
VCE(sat) @ IC/IB = 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
5.0
Figure 9. “On” Voltage
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4
2.0 3.0
5.0
+2.5
+2.0
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
MJE200G (NPN), MJE210G (PNP)
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5
25°C to 150°C
qVC for VCE(sat)
0
-55°C to 25°C
-0.5
-1.0
-1.5
-2.0
25°C to 150°C
qVB for VBE
-2.5
0.05 0.07 0.1
-55°C to 25°C
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0
+2.5
+2.0
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5
25°C to 150°C
*qVC for VCE(sat)
0
-55°C to 25°C
-0.5
25°C to 150°C
-1.0
-1.5
qVB for VBE
-55°C to 25°C
-2.0
-2.5
0.05 0.07 0.1
IC, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5 0.7
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
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5
2.0 3.0
5.0
MJE200G (NPN), MJE210G (PNP)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
D
P
1
2
3
L1
L
2X
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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MJE200/D
