MJE243G

MJE243G (NPN), MJE253G(PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS High Collector−Emitter Sustaining Voltage High DC Current Gain Low Collector−Emitter Saturation Voltage High Current Gain Bandwidth Product Annular Construction for Low Leakages These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 7.0 Vdc IC 4.0 Adc ICM 8.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 15 120 W mW/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.5 12 W mW/_C –65 to +150 _C Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range TJ, Tstg http://onsemi.com PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 3 BASE 3 BASE EMITTER 1 TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. YWW JE2x3G THERMAL CHARACTERISTICS Characteristic EMITTER 1 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.34 _C/W Thermal Resistance, Junction−to−Ambient RqJA 83.4 _C/W Y = Year WW = Work Week JE2x3 = Device Code x = 4 or 5 G = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 16 1 Device Package Shipping MJE243G TO−225 (Pb−Free) 500 Units/Box MJE253G TO−225 (Pb−Free) 500 Units/Box Publication Order Number: MJE243/D MJE243G (NPN), MJE253G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max 100 − − − 0.1 0.1 − 0.1 40 15 180 − − − 0.3 0.6 − 1.8 − 1.5 40 − − 50 Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125_C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO V mA mA mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − V V V DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MHz Cob pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 100 80 120 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) MJE243G (NPN), MJE253G (PNP) 0 160 140 T, TEMPERATURE (°C) Figure 1. Power Derating VCC +30 V 1K 500 300 200 RC 25 ms +11 V SCOPE RB 100 t, TIME (ns) 0 D1 51 -9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr -4 V 50 30 20 td 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 1 0.01 NPN MJE243 PNP MJE253 0.02 0.03 0.05 0.1 1 2 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 qJC(t) = r(t) qJC qJC = 8.34°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0.03 0.02 0.01 0.02 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 3 5 10 Figure 3. Turn−On Time Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 VCC = 30 V IC/IB = 10 TJ = 25°C 1.0 2.0 t, TIME (ms) 5.0 Figure 4. Thermal Response http://onsemi.com 3 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 MJE243G (NPN), MJE253G (PNP) 10 100ms IC, COLLECTOR CURRENT (AMP) 2.0 1.0ms 1.0 dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.2 0.1 0.05 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500ms 5.0 5.0ms 0.02 MJE243/MJE253 0.01 1.0 50 70 100 2.0 3.0 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 10K 200 ts t, TIME (ns) 1K TJ = 25°C 100 C, CAPACITANCE (pF) 5K 3K 2K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 500 300 200 100 50 30 20 10 0.01 Cib 70 50 30 Cob 20 tf MJE243 (NPN) MJE253 (PNP) NPN MJE243 PNP MJE253 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) 3 5 10 1.0 10 Figure 6. Turn−Off Time 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 70 100 MJE243G (NPN), MJE253G (PNP) NPN MJE243 PNP MJE253 500 VCE = 1.0 V VCE = 2.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 200 TJ = 150°C 25°C 100 70 50 -55°C 30 20 10 7.0 5.0 0.04 0.06 0.1 1.0 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 25°C -55°C 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 4.0 VCE = 1.0 V VCE = 2.0 V TJ = 150°C 100 70 50 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain 1.4 1.4 TJ = 25°C 1.2 1.2 1.0 1.0 0.8 0.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 0.4 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1.0 V 0.6 IC/IB = 10 0.4 5.0 5.0 0.2 0.2 VCE(sat) VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 0 0.04 0.06 4.0 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) +2.5 +2.0 θV, TEMPERATURE COEFFICIENTS (mV/ °C) θV, TEMPERATURE COEFFICIENTS (mV/ °C) Figure 9. “On” Voltages *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 *qVC FOR VCE(sat) 0 25°C to 150°C -55°C to 25°C -0.5 -1.0 25°C to 150°C -1.5 -2.0 qVB FOR VBE -2.5 0.04 0.06 0.1 -55°C to 25°C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 +2.5 +2.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 25°C to 150°C *qVC FOR VCE(sat) 0 -55°C to 25°C -0.5 -1.0 -1.5 25°C to 150°C qVB FOR VBE -2.5 0.04 0.06 4.0 -55°C to 25°C -2.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AD 4 DATE 25 MAR 2015 3 2 1 1 2 3 FRONT VIEW BACK VIEW SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 GENERIC MARKING DIAGRAM* L YWW XX XXXXXG 2X b2 2X e b FRONT VIEW Y = Year WW = Work Week XXXXX = Device Code G = Pb−Free Package c SIDE VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE STYLE 2: PIN 1. CATHODE 2., 4. ANODE 3. GATE STYLE 3: PIN 1. BASE 2., 4. COLLECTOR 3. EMITTER STYLE 4: PIN 1. ANODE 1 2., 4. ANODE 2 3. GATE STYLE 5: PIN 1. MT 1 2., 4. MT 2 3. GATE STYLE 6: PIN 1. CATHODE 2., 4. GATE 3. ANODE STYLE 7: PIN 1. MT 1 2., 4. GATE 3. MT 2 STYLE 8: PIN 1. SOURCE 2., 4. GATE 3. DRAIN STYLE 9: PIN 1. GATE 2., 4. DRAIN 3. SOURCE STYLE 10: PIN 1. SOURCE 2., 4. DRAIN 3. GATE DOCUMENT NUMBER: DESCRIPTION: 98ASB42049B TO−225 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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