MJE270

Complementary Silicon Power Transistors MJE270G (NPN), MJE271G (PNP) Features www.onsemi.com • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS • Collector−Emitter Sustaining Voltage • • VCEO(sus) = 100 Vdc (Min) High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) These Devices are Pb−Free and are RoHS Compliant NPN MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector−Emitter Voltage Collector Current − Continuous IC 2.0 Adc ICM 4.0 Adc Base Current IB 0.1 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 15 0.12 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.5 0.012 W W/_C −65 to +150 _C Collector Current − Peak Operating and Storage Junction Temperature Range TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. COLLECTOR 2, 4 COLLECTOR 2, 4 BASE 1 BASE 1 EMITTER 3 EMITTER 3 MJE270 MJE271 TO−225 CASE 77−09 STYLE 3 1 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.33 _C/W Thermal Resistance, Junction−to−Ambient RqJA 83.3 _C/W PNP YWW JE27xG Y = Year WW = Work Week JE27x = Specific Device Code x= 0 or 1 G = Pb−Free Package ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2013 July, 2020 − Rev. 9 1 Device Package Shipping MJE270G TO−225 (Pb−Free) 500 Units / Box MJE270TG TO−225 (Pb−Free) 50 Units / Rail MJE271G TO−225 (Pb−Free) 500 Units / Box Publication Order Number: MJE270/D MJE270G (NPN), MJE271G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max 100 − − 1.0 − 0.3 − 0.1 375 − 500 1500 − − − − 2.0 3.0 − 2.0 6.0 − Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 100 Vdc, IB = 0) ICEO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc SECOND BREAKDOWN IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1.0 s, Non−repetitive) Adc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 20 mAdc, VCE = 3.0 Vdc) (IC = 120 mAdc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 20 mAdc, IB = 0.2 mAdc) (IC = 120 mAdc, IB = 1.2 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 120 mAdc, VCE = 10 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS fT Current Gain − Bandwidth Product (Note 2) (IC = 0.05 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = ⎪hfe⎪• ftest. 10 VCE = 3.0 V 150°C IC, COLLECTOR CURRENT (AMPS) hFE, DC CURRENT GAIN 10,000 7000 5000 3000 25°C -55°C 1000 700 500 300 100 0.015 0.03 0.5 0.7 0.05 0.07 0.1 0.3 IC, COLLECTOR CURRENT (AMPS) 1.0 1.5 5.0 1.0 dc 0.5 MJE270/MJE271 0.1 0.05 0.01 1.0 Figure 1. DC Current Gain BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 7.0 10 3.0 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Safe Operating Area www.onsemi.com 2 70 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AD 4 DATE 25 MAR 2015 3 2 1 1 2 3 FRONT VIEW BACK VIEW SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 GENERIC MARKING DIAGRAM* L YWW XX XXXXXG 2X b2 2X e b FRONT VIEW Y = Year WW = Work Week XXXXX = Device Code G = Pb−Free Package c SIDE VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE STYLE 2: PIN 1. CATHODE 2., 4. ANODE 3. GATE STYLE 3: PIN 1. BASE 2., 4. COLLECTOR 3. EMITTER STYLE 4: PIN 1. ANODE 1 2., 4. ANODE 2 3. GATE STYLE 5: PIN 1. MT 1 2., 4. MT 2 3. GATE STYLE 6: PIN 1. CATHODE 2., 4. GATE 3. ANODE STYLE 7: PIN 1. MT 1 2., 4. GATE 3. MT 2 STYLE 8: PIN 1. SOURCE 2., 4. GATE 3. DRAIN STYLE 9: PIN 1. GATE 2., 4. DRAIN 3. SOURCE STYLE 10: PIN 1. SOURCE 2., 4. DRAIN 3. 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