MJE3439G
NPN Silicon High-Voltage
Power Transistor
This device is designed for use in line−operated equipment
requiring high fT.
Features
•
•
•
•
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High DC Current Gain
High Current−Gain − Bandwidth Product
Low Output Capacitance
These Devices are Pb−Free and are RoHS Compliant*
0.3 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 15 WATTS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
350
Vdc
Collector−Base Voltage
VCB
450
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
IC
0.3
Adc
Base Current
IB
150
mAdc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
15
0.12
W
mW/_C
–65 to +150
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
COLLECTOR
2, 4
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1 2
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
8.33
_C/W
MARKING DIAGRAM
YWW
E3439G
Y
WW
E3439
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJE3439G
Package
Shipping
TO−225
(Pb−Free)
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 13
1
Publication Order Number:
MJE3439/D
MJE3439G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
350
−
−
20
−
500
−
20
−
20
30
15
−
200
−
0.5
−
1.3
−
0.8
15
−
−
10
25
−
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 300 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 450 Vdc, VEB(off) = 1.5 Vdc)
ICEX
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc)
(IC = 20 mAdc, VCE = 10 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = 50 mAdc, VCE = 10 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
Small−Signal Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
pF
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MJE3439G
16
PD, POWER DISSIPATION (WATTS)
14
12
10
8.0
6.0
4.0
2.0
0
0
20
40
80
120
60
100
TC, CASE TEMPERATURE (°C)
140
160
IC, COLLECTOR CURRENT (AMP)
Figure 1. Power−Temperature Derating Curve
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.007
0.005
0.003
0.002
0.001
MJE3439
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200 300 500 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active−Region Safe Operating Area
The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power
conditions.
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
4
DATE 25 MAR 2015
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
2X
e
b
FRONT VIEW
Y
= Year
WW
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
c
SIDE VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
STYLE 2:
PIN 1. CATHODE
2., 4. ANODE
3. GATE
STYLE 3:
PIN 1. BASE
2., 4. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. ANODE 1
2., 4. ANODE 2
3. GATE
STYLE 5:
PIN 1. MT 1
2., 4. MT 2
3. GATE
STYLE 6:
PIN 1. CATHODE
2., 4. GATE
3. ANODE
STYLE 7:
PIN 1. MT 1
2., 4. GATE
3. MT 2
STYLE 8:
PIN 1. SOURCE
2., 4. GATE
3. DRAIN
STYLE 9:
PIN 1. GATE
2., 4. DRAIN
3. SOURCE
STYLE 10:
PIN 1. SOURCE
2., 4. DRAIN
3. GATE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO−225
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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