MJE344G
Plastic NPN Silicon
Medium-Power Transistor
This device is useful for medium voltage applications requiring high
fT such as converters and extended range amplifiers.
Features
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• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
200
Vdc
Collector−Base Voltage
VCB
200
Vdc
Emitter Base Voltage
VEB
5.0
Vdc
IC
500
mAdc
Base Current
IB
250
mAdc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
20
0.16
W
mW/_C
–65 to +150
_C
Collector Current − Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150−200 VOLTS, 20 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−225
CASE 77−09
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
6.25
_C/W
1 2
3
MARKING DIAGRAM
YWW
JE344G
Y
WW
JE344
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE344G
TO−225
(Pb−Free)
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 4
1
Publication Order Number:
MJE344/D
MJE344G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
200
−
Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
ICEO
−
1.0
mAdc
Collector Cutoff Current (VCB = 200 Vdc, IE = 0)
ICBO
−
0.1
mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
−
0.1
mAdc
hFE
30
300
−
Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
1.0
Vdc
Base−Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)
VBE(on)
−
1.0
Vdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz)
fT
15
−
MHz
Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz)
Cob
−
15
pF
Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
IC, COLLECTOR CURRENT (AMP)
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
500ms
0.5
1.0ms
TJ = 150°C
0.2
ALL
ALL
0.1
dc
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25°C
0.02
0.01
10
20
60
100
30 40
200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
300
Figure 1. Active Region Safe Operating Area
300
1.0
VCE = 2.0 V
VCE = 10 V
200
0.8
100
VOLTAGE (VOLTS)
hFE, CURRENT GAIN
TJ = +150°C
+100°C
70
50
30
+25°C
-55°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
0.6
0.4
VCE(sat) @ IC/IB = 10
20
0.2
TJ = +25°C
IC/IB = 5.0
10
1.0
20
50 70 100
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
0
200 300 500
10
20
30
200 300
100
50
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
Figure 2. DC Current Gain
http://onsemi.com
2
500
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
4
DATE 25 MAR 2015
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
2X
e
b
FRONT VIEW
Y
= Year
WW
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
c
SIDE VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
STYLE 2:
PIN 1. CATHODE
2., 4. ANODE
3. GATE
STYLE 3:
PIN 1. BASE
2., 4. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. ANODE 1
2., 4. ANODE 2
3. GATE
STYLE 5:
PIN 1. MT 1
2., 4. MT 2
3. GATE
STYLE 6:
PIN 1. CATHODE
2., 4. GATE
3. ANODE
STYLE 7:
PIN 1. MT 1
2., 4. GATE
3. MT 2
STYLE 8:
PIN 1. SOURCE
2., 4. GATE
3. DRAIN
STYLE 9:
PIN 1. GATE
2., 4. DRAIN
3. SOURCE
STYLE 10:
PIN 1. SOURCE
2., 4. DRAIN
3. GATE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO−225
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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