MJE521
Plastic Medium−Power
NPN Silicon Transistor
These devices are designed for use in general−purpose amplifier and
switching circuits. Recommended for use in 5 to 10 Watt audio
amplifiers utilizing complementary symmetry circuitry.
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Features
• DC Current Gain − hFE = 40 (Min) @ IC
•
•
4 AMPERES
POWER TRANSISTORS
NPN SILICON
40 VOLTS, 40 WATTS
= 1.0 Adc
Complementary to PNP MJE371
Pb−Free Package is Available*
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MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
Value
Unit
VCEO
40
Vdc
Collector−Base Voltage
VCB
40
Vdc
Emitter Base Voltage
VEB
4.0
Vdc
− Continuous
− Peak
IC
4.0
8.0
Adc
− Continuous
IB
2.0
Adc
PD
40
0.32
W
mW/_C
TJ, Tstg
–65 to +150
_C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
3.12
_C/W
Collector Current
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
TO−225
CASE 77
STYLE 1
3
2 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
YWW
JE521G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Y
WW
JE521
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJE521
MJE521G
Package
Shipping
TO−225
500 Units/Box
TO−225
(Pb−Free)
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1
Publication Order Number:
MJE521/D
MJE521
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
40
−
Vdc
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
−
100
mAdc
Emitter−Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
−
100
mAdc
hFE
40
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MJE521
IC, COLLECTOR CURRENT (AMP)
10
The data of Figure 1 based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided (T Jpk )
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1.0ms
5.0
3.0
5.0ms
2.0
dc
TJ = 150°C
1.0
0.5
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
0.3
0.2
0.1
2.0
3.0
5.0
10
20
30
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 1. Active−Region Safe Operating Area
1.5
VCE = 1.0 V
1.2
300
200
VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
1000
700
500
TJ = 150°C
100
70
50
25°C
−55 °C
30
TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
20
VCE(sat) @ IC/IB = 10
10
2.0
3.0 5.0 10
0
2.0
20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
3.0 5.0 10
20 30 50
100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 2. DC Current Gain
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.1
0.07
0.05
0.03
Figure 3. “On” Voltage
0.2
qJC(t) = r(t) qJC
qJC = 5.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.1
0.05
0.01
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
Figure 4. Thermal Response
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3
20
30
50
100
200 300
500
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
4
DATE 25 MAR 2015
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
2X
e
b
FRONT VIEW
Y
= Year
WW
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
c
SIDE VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
STYLE 2:
PIN 1. CATHODE
2., 4. ANODE
3. GATE
STYLE 3:
PIN 1. BASE
2., 4. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. ANODE 1
2., 4. ANODE 2
3. GATE
STYLE 5:
PIN 1. MT 1
2., 4. MT 2
3. GATE
STYLE 6:
PIN 1. CATHODE
2., 4. GATE
3. ANODE
STYLE 7:
PIN 1. MT 1
2., 4. GATE
3. MT 2
STYLE 8:
PIN 1. SOURCE
2., 4. GATE
3. DRAIN
STYLE 9:
PIN 1. GATE
2., 4. DRAIN
3. SOURCE
STYLE 10:
PIN 1. SOURCE
2., 4. DRAIN
3. GATE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO−225
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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