MJE5731A

MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switch−mode power supply drivers and other switching applications. Features 1.0 AMPERE POWER TRANSISTORS PCP SILICON 300−350−400 VOLTS 50 WATTS • Popular TO−220 Plastic Package • PNP Complements to the TIP47 thru TIP50 Series • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage MJE5730 MJE5731 MJE5731A Symbol Value COLLECTOR 2, 4 Unit VCEO Vdc 300 350 375 Collector−Base Voltage MJE5730 MJE5731 MJE5731A VCB Emitter−Base Voltage VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD Total Device Dissipation @ TC = 25_C Derate above 25°C PD Unclamped Inducting Load Energy (See Figure 10) E 1 BASE Vdc 300 350 375 Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range www.onsemi.com 3 EMITTER 40 0.32 W W/_C 2.0 0.016 W W/_C 20 mJ 4 TO−220 CASE 221A−09 STYLE 1 1 2 3 MARKING DIAGRAM TJ, Tstg _C −65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics MJE573xG AY WW Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.125 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MJE573x = Device Code x = 0, 1, or 1A G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 8 1 Publication Order Number: MJE5730/D MJE5730, MJE5731, MJE5731A ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJE5730 MJE5731 MJE5731A Vdc 300 350 375 Collector Cutoff Current (VCE = 200 Vdc, IB = 0) MJE5730 (VCE = 250 Vdc, IB = 0) MJE5731 (VCE = 300 Vdc, IB = 0) MJE5731A ICEO Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) MJE5730 (VCE = 350 Vdc, VBE = 0) MJE5731 (VCE = 400 Vdc, VBE = 0) MJE5731A ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − − − mAdc − 1.0 − 1.0 − 1.0 mAdc − 1.0 − 1.0 − 1.0 − 1.0 30 10 150 − − 1.0 − 1.5 10 − 25 − mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz − 200 hFE, DC CURRENT GAIN 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. VCE = 10 V TJ = 150°C 50 25°C 30 -55°C 20 10 5.0 3.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 Figure 1. DC Current Gain 1.4 1.2 1 TJ = 25°C 0.8 0.6 -55°C 0.4 150°C 0.2 VCE(sat)) @ IC/IB = 5.0 0 0.02 0.03 0.05 0.1 0.5 0.2 0.3 IC, COLLECTOR CURRENT (AMPS) 1.0 Figure 2. Collector−Emitter Saturation Voltage www.onsemi.com 2 2.0 MJE5730, MJE5731, MJE5731A 1.0 1.4 SECOND BREAKDOWN DERATING 1.2 0.8 V, VOLTAGE (V) DERATING FACTOR TJ = - 55°C 1.0 VBE(sat) @ IC/IB = 5.0 0.8 25°C 0.6 150°C 0.4 0.6 THERMAL DERATING 0.4 0.2 0.2 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 0 2.0 0 25 Figure 3. Base−Emitter Voltage 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 100 ms 1.0ms 1.0 TC = 25°C 0.5 500 ms dc 0.2 0.1 0.05 0.02 0.01 5.0 175 Figure 4. Normalized Power Derating 5.0 2.0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJE5730 MJE5731 MJE5732 100 50 10 20 30 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Forward Bias Safe Operating Area 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 0.2 0.1 0.02 0.03 0.01 0.02 P(pk) RqJC(t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 6. Thermal Response www.onsemi.com 3 20 50 100 200 500 1k MJE5730, MJE5731, MJE5731A TURN-ON PULSE t1 VBE(off) 0V Vin VCC AP­ PROX. -11 V RC SCOPE t1 ≤ 7.0 ns 100 ≤ t2 < 500 ms t3 < 15 ns RB Vin t3 t2 Cjd