MJE700G, MJE702G,
MJE703G (PNP), MJE800G,
MJE802G, MJE803G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
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These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
• High DC Current Gain − hFE = 2000 (Typ) @ IC
•
•
•
= 2.0 Adc
Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
Choice of Packages − MJE700 and MJE800 Series
These Devices are Pb−Free and are RoHS Compliant*
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
NPN
PNP
COLLECTOR 2, 4
COLLECTOR 2, 4
BASE
3
BASE
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
VCEO
Collector−Base Voltage
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G,
MJE803G
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
40
0.32
W
mW/_C
–55 to +150
_C
Operating and Storage Junction
Temperature Range
Vdc
60
80
EMITTER 1
EMITTER 1
MJE800
MJE802
MJE803
MJE700
MJE702
MJE703
Vdc
60
80
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
JEx0yG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.12
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.3
_C/W
Y
= Year
WW
= Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 12
1
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
MJE700/D
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 50 mAdc, IB = 0)
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G, MJE803G
V(BR)CEO
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
MJE700G, MJE800G
(VCE = 80 Vdc, IB = 0)
MJE702G, MJE703G, MJE802G, MJE803G
ICEO
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100_C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
60
80
−
−
mAdc
−
100
−
100
−
−
100
500
−
2.0
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
MJE700G, MJE702G, MJE800G, MJE802G
(IC = 2.0 Adc, VCE = 3.0 Vdc)
MJE703G, MJE803G
(IC = 4.0 Adc, VCE = 3.0 Vdc)
All devices
hFE
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)
MJE700G, MJE702G, MJE800G, MJE802G
(IC = 2.0 Adc, IB = 40 mAdc)
MJE703G, MJE803G
(IC = 4.0 Adc, IB = 40 mAdc)
All devices
VCE(sat)
Base−Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
MJE700G, MJE702G, MJE800G, MJE802G
(IC = 2.0 Adc, VCE = 3.0 Vdc)
MJE703G, MJE803G
(IC = 4.0 Adc, VCE = 3.0 Vdc)
All devices
VBE(on)
−
750
−
750
−
100
−
Vdc
−
2.5
−
2.8
−
3.0
Vdc
−
2.5
−
2.5
−
3.0
1.0
−
DYNAMIC CHARACTERISTICS
hfe
Small−Signal Current Gain
(IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
PD, POWER DISSIPATION (WATTS)
50
40
30
20
10
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
125
150
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
4.0
VCC
-30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RC
VCC = 30 V
IC/IB = 250
ts
IB1 = IB2
TJ = 25°C
2.0
SCOPE
t, TIME (s)
μ
TUT
V2
APPROX
+8.0 V
RB
51
0
V1
APPROX
-12 V
≈ 6.0 k
D1
≈ 150
For td and tr, D1 id disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tr
0.6
0.4
+ 4.0 V
25 ms
tf
1.0
0.8
td @ VBE(off) = 0
0.2
0.04 0.06
For NPN test circuit, reverse diode,
polarities and input pulses.
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.03
PNP
NPN
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 3. Switching Times
P(pk)
qJC(t) = r(t) qJC
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
0.05
0.01
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response (MJE700, 800 Series)
5.0ms
3.0
2.0
100ms
dc
TJ = 150°C
1.0
0.7
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.3
0.2
0.1
5.0
1.0ms
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
ACTIVE−REGION SAFE−OPERATING AREA
10
7.0
5.0
MJE702, 703
MJE700
7.0
10
20
30
50
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
3.0
2.0
100ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.3
0.2
Figure 5. MJE700 Series
1.0ms
dc
1.0
0.7
0.5
0.1
5.0
100
5.0ms
MJE802, 803
MJE800
7.0
10
20
30
50
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 6. MJE800 Series
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 are based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
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3
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
PNP
MJE700 Series
NPN
MJE800 Series
6.0 k
6.0 k
TJ = 125°C
4.0 k
3.0 k
25°C
2.0 k
-55°C
1.0 k
800
600
400
300
0.04 0.06
0.1
0.4 0.6
1.0
0.2
IC, COLLECTOR CURRENT (AMP)
2.0
VCE = 3.0 V
TJ = 125°C
4.0 k
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 3.0 V
3.0 k
25°C
2.0 k
-55°C
1.0 k
800
600
400
300
0.04 0.06
4.0
0.1
0.4 0.6
1.0
0.2
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
3.4
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
TJ = 25°C
3.0
2.6
IC =
0.5 A
1.0 A
2.0 A
4.0 A
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
1.0
2.0
5.0
20
10
50
100
3.4
3.0
TJ = 25°C
IC =
0.5 A
1.0 A
2.0 A
4.0 A
2.6
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
IB, BASE CURRENT (mA)
1.0
2.0
5.0
10
20
50
100
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2
2.2
TJ = 25°C
TJ = 25°C
1.4
1.8
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
1.4
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.1
0.2
0.4
0.6
1.0
2.0
0.2
0.04 0.06
4.0
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
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4
2.0
4.0
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
ORDERING INFORMATION
Device
Package
Shipping
MJE700G
TO−225
(Pb−Free)
50 Units / Bulk
MJE702G
TO−225
(Pb−Free)
50 Units / Bulk
MJE703G
TO−225
(Pb−Free)
50 Units / Bulk
MJE800G
TO−225
(Pb−Free)
50 Units / Bulk
MJE802G
TO−225
(Pb−Free)
50 Units / Bulk
MJE803G
TO−225
(Pb−Free)
50 Units / Bulk
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
4
DATE 25 MAR 2015
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
2X
e
b
FRONT VIEW
Y
= Year
WW
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
c
SIDE VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
STYLE 2:
PIN 1. CATHODE
2., 4. ANODE
3. GATE
STYLE 3:
PIN 1. BASE
2., 4. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. ANODE 1
2., 4. ANODE 2
3. GATE
STYLE 5:
PIN 1. MT 1
2., 4. MT 2
3. GATE
STYLE 6:
PIN 1. CATHODE
2., 4. GATE
3. ANODE
STYLE 7:
PIN 1. MT 1
2., 4. GATE
3. MT 2
STYLE 8:
PIN 1. SOURCE
2., 4. GATE
3. DRAIN
STYLE 9:
PIN 1. GATE
2., 4. DRAIN
3. SOURCE
STYLE 10:
PIN 1. SOURCE
2., 4. DRAIN
3. GATE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO−225
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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