MJF3055

MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. Features • • • • • • • • • COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS, 30 WATTS Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T Collector−Emitter Sustaining Voltage − VCEO(sus) 90 Volts 10 Amperes Rated Collector Current No Isolating Washers Required Reduced System Cost UL Recognized, File #E69369, to 3500 VRMS Isolation Epoxy Meets UL 94 V−0 at 0.125 in ESD Ratings: Machine Model, C; u400 V Human Body Model, 3B; u8000 V Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ • MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO(sus) 90 Vdc Collector−Emitter Breakdown Voltage VCES 90 Vdc Base−Emitter Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 10 Adc Base Current − Continuous IB 6.0 RMS Isolation Voltage (Note 3) (t = 0.3 sec, R.H. ≤ 30%, TA = 25_C) Per Figure 5 VISOL TO−220 FULLPACK CASE 221D STYLE 2 1 2 MARKING DIAGRAM Adc 4500 PD 30 0.25 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C TJ, Tstg –55 to +150 _C Fxx55G AYWW Fxx55 = Specific Device Code xx= 29 or 30 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case (Note 2) RqJC 4.0 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Lead Temperature for Soldering Purposes TL 260 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. 2. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs. 3. Proper strike and creepage distance must be provided. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 7 3 VRMS Total Power Dissipation @ TC = 25_C (Note 2) Derate above 25_C Operating and Storage Temperature Range http://onsemi.com 1 ORDERING INFORMATION Device Package Shipping MJF2955 TO−220 FULLPACK 50 Units/Rail MJF2955G TO−220 FULLPACK (Pb−Free) 50 Units/Rail MJF3055 TO−220 FULLPACK 50 Units/Rail MJF3055G TO−220 FULLPACK (Pb−Free) 50 Units/Rail Publication Order Number: MJF3055/D MJF3055 (NPN), MJF2955 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 90 − Vdc Collector Cutoff Current (VCE = 90 Vdc, VBE = 0) ICES − 1.0 mAdc Collector Cutoff Current (VCE = 90 Vdc, IE = 0) ICBO − 1.0 mAdc Emitter−Base Leakage (VEB = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc hFE 20 5.0 100 − − − − 1.0 2.5 OFF CHARACTERISTICS (Note 4) Collector−Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0) ON CHARACTERISTICS (Note 4) DC Current Gain DC Current Gain (ICE = 4.0 Adc, VCE = 4.0 Vdc) (ICE = 10 Adc, VCE = 4.0 Vdc) Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 4.0 Adc, VBE = 4.0 Vdc) VBE(on) − 1.5 Vdc fT 2.0 − MHz DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product (VCE = 10 Vdc, IC = 0.5 Adc, ftest = 500 kHz) 4. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. http://onsemi.com 2 MJF3055 (NPN), MJF2955 (PNP) 500 10 100 ms hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (AMPS) 20 5 ms 5 3 2 TJ = 150°C 1 1 ms dc CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) 0.5 0.3 0.2 1 300 200 TJ = 150°C 100 25°C VCE = 2 V 50 -55°C 30 20 10 2 3 5 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5 0.01 100 0.02 Figure 1. Maximum Forward Bias Safe Operating Area 10 PNP MJF3055 2 1.4 TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 3 V TJ = 25°C 1 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2 V 0.4 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1 2 3 5 0 0.1 10 VCE(sat) @ IC/IB = 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1 TC TA 40 4.0 30 3.0 TC 20 2.0 TA 10 1.0 0 0 0 20 2 3 IC, COLLECTOR CURRENT (AMP) Figure 3. “On” Voltages PD, POWER DISSIPATION (WATTS) V, VOLTAGE (VOLTS) 5 Figure 2. DC Current Gain PNP MJF2955 0.8 0.05 0.1 0.2 2 0.5 1 IC, COLLECTOR CURRENT (AMP) 40 60 100 120 80 T, TEMPERATURE (°C) Figure 4. Power Derating http://onsemi.com 3 140 160 5 10 MJF3055 (NPN), MJF2955 (PNP) TEST CONDITIONS FOR ISOLATION TESTS* FULLY ISOLATED PACKAGE LEADS HEATSINK 0.110, MIN Figure 5. Mounting Position *Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 6. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F C S Q SCALE 1:1 SEATING PLANE U 1 2 3 −Y− K G N L D STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 4: PIN 1. CATHODE 2. ANODE 3. CATHODE STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE J R 3 PL 0.25 (0.010) M B M Y DESCRIPTION: INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MARKING DIAGRAMS STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. MT 1 2. MT 2 3. GATE xxxxxx G A Y WW DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U A H DATE 27 FEB 2009 98ASB42514B TO−220 FULLPAK xxxxxxG AYWW AYWW xxxxxxG AKA Bipolar Rectifier = Specific Device Code = Pb−Free Package = Assembly Location = Year = Work Week A Y WW xxxxxx G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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