MJF32C

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package Applications http://onsemi.com Designed for use in general purpose amplifier and switching applications. Features • Collector−Emitter Saturation Voltage − • • • • 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 28 WATTS VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) High Current Gain − Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc UL Recognized, File #E69369, to 3500 VRMS Isolation Pb−Free Packages are Available* 4 TO−220 FULLPAK CASE 221D STYLE 2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ 1 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector−Emitter Voltage Collector CurrentUnclamped Inductive Load Energy (Note 1) − Continuous − Peak IC Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 28 0.22 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C Unclamped Inductive Load Energy (Note 1) E 32 mJ –65 to +150 _C MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJC 62.5 °C/W Thermal Resistance, Junction−to−Case RqJC 4.46 °C/W MJF3xCG AYWW x G A Y WW THERMAL CHARACTERISTICS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 5 3 Adc 3.0 5.0 TJ, Tstg Operating and Storage Junction Temperature Range 2 1 = 1 or 2 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Device Package Shipping MJF31C TO−220 FULLPAK 50 Units/Rail MJF31CG TO−220 FULLPAK (Pb−Free) 50 Units/Rail MJF32C TO−220 FULLPAK 50 Units/Rail MJF32CG TO−220 FULLPAK (Pb−Free) 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJF31C/D MJF31C (NPN), MJF32C (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 100 − − 0.3 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) VCEO(sus) Vdc Collector Cutoff Current (IC = 3.0 Adc, VCE = 4.0 Vdc) ICEO mAdc Collector Cutoff Current ICES − 200 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc hFE 25 10 − 50 − Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) − 1.2 Vdc Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.8 Vdc Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. P D, POWER DISSIPATION (WATTS) TC TA 40 4.0 30 3.0 TC 20 2.0 TA 10 1.0 0 0 0 20 40 60 100 120 80 T, TEMPERATURE (°C) 140 160 Figure 1. Power Derating TURN-ON PULSE APPROX +11 V VCC 2.0 RC IC/IB = 10 TJ = 25°C 1.0 VEB(off) SCOPE Vin Vin 0 0.7 0.5 RB t3 APPROX +11 V Cjd