MJF44H11

MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http://onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS • Low Collector−Emitter Saturation Voltage − • • • VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak 1 Symbol Value Unit VCEO 80 Vdc VEB 5 Vdc IC 10 20 Adc 36 0.288 W W/°C 2.0 0.016 W W/°C −55 to 150 °C Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 3.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 April, 2009 − Rev. 6 1 2 ISOLATED TO−220 CASE 221D STYLE 2 3 MARKING DIAGRAM F4xH11G AYWW F4xH11 = Specific Device Code x = 4 or 5 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Package Shipping MJF44H11 Device TO−220 FULLPACK 50 Units/Rail MJF44H11G TO−220 FULLPACK (Pb−Free) 50 Units/Rail MJF45H11 TO−220 FULLPACK 50 Units/Rail MJF45H11G TO−220 FULLPACK (Pb−Free) 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJF44H11/D MJF44H11 (NPN), MJF45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) VCEO(sus) 80 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 1.0 mA Emitter Cutoff Current (VEB = 5 Vdc) IEBO − − 10 mA Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1.0 Vdc Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) hFE 60 − − − 40 − − − − 130 230 − − − − 50 40 − − − − 300 135 − − − − 500 500 − − − − 140 100 − − Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Ccb MJF44H11 MJF45H11 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) pF fT MJF44H11 MJF45H11 MHz SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) MJF44H11 MJF45H11 Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) ns 0.1 0.1 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.03 0.01 0.01 tf MJF44H11 MJF45H11 0.2 0.2 0.02 ns D = 0.5 0.3 0.07 0.05 ns ts MJF44H11 MJF45H11 Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) 1.0 0.7 0.5 td + tr 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 Figure 1. Thermal Response http://onsemi.com 2 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k MJF44H11 (NPN), MJF45H11 (PNP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 50 30 20 1.0 ms 100 ms 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 10 ms TC ≤ 70° C DUTY CYCLE ≤ 50% dc 1.0 ms MJF44H11/MJF45H11 5.0 7.0 10 2.0 3.0 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMPS) 100 TA TC 3.0 60 2.0 40 TA 1.0 20 0 0 TC 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 140 160 MJF44H11 (NPN), MJF45H11 (PNP) 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 VCE = 4 V 100 VCE = 1 V TJ = 25°C 10 0.1 1 VCE = 4 V 100 1V TJ = 25°C 10 0.1 10 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. MJF44H11 DC Current Gain Figure 5. MJF45H11 DC Current Gain 1000 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125°C TJ = 125°C 25°C 100 -40°C VCE = 1 V 10 0.1 1 1 10 Figure 6. MJF44H11 Current Gain versus Temperature Figure 7. MJF45H11 Current Gain versus Temperature 1.2 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 0.1 IC, COLLECTOR CURRENT (AMPS) VBE(sat) 0.8 0.6 0 0.1 VCE = 1 V IC, COLLECTOR CURRENT (AMPS) 1 0.2 100 10 10 1.2 0.4 25°C -40°C IC/IB = 10 TJ = 25°C VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 1 0.8 0.6 0.4 IC/IB = 10 TJ = 25°C VCE(sat) 0.2 0 0.1 10 VBE(sat) Figure 8. MJF44H11 On−Voltages 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. MJF45H11 On−Voltages http://onsemi.com 4 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F C S Q SCALE 1:1 SEATING PLANE U 1 2 3 −Y− K G N L D STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 4: PIN 1. CATHODE 2. ANODE 3. CATHODE STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE J R 3 PL 0.25 (0.010) M B M Y DESCRIPTION: INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MARKING DIAGRAMS STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. MT 1 2. MT 2 3. GATE xxxxxx G A Y WW DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U A H DATE 27 FEB 2009 98ASB42514B TO−220 FULLPAK xxxxxxG AYWW AYWW xxxxxxG AKA Bipolar Rectifier = Specific Device Code = Pb−Free Package = Assembly Location = Year = Work Week A Y WW xxxxxx G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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