MJF47

MJF47G High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features • • • • • • • Electrically Similar to the Popular TIP47 250 VCEO(sus) 1 A Rated Collector Current No Isolating Washers Required Reduced System Cost UL Recognized, File #E69369, to 3500 VRMS Isolation This is a Pb−Free Device* http://onsemi.com NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS, 28 WATTS TO−220 FULLPACK CASE 221D STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 250 Vdc Collector−Base Voltage VCB 350 Vdc Emitter−Base Voltage VEB 5 Vdc Collector−Emitter Voltage RMS Isolation Voltage (Note 1) Test No. 1 Per Figure 10 Test No. 2 Per Figure 11 Test No. 3 Per Figure 12 (for 1 sec, R.H. < 30%, TA = 25_C) Collector Current − Continuous − Peak VISOL 4500 3500 1500 1 2 Adc Base Current − Continuous IB 0.6 Adc Total Power Dissipation (Note 2) @ TC = 25_C Derate above 25_C PD 28.4 0.227 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C TJ, Tstg –65 to +150 _C Characteristic Symbol Max Unit RqJA 62.5 _C/W Thermal Resistance, Junction−to−Case (Note 2) RqJC 4.4 _C/W Lead Temperature for Soldering Purposes TL 260 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Proper strike and creepage distance must be provided. 2. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 6 1 3 MJF47G AYWW G A Y WW THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient 2 MARKING DIAGRAM V IC Operating and Storage Temperature Range 1 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Device MJF47G Package Shipping TO−220 FULLPACK (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: MJF47/D MJF47G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Min Max Unit VCEO(sus) 250 − Vdc Collector Cutoff Current (VCE = 150 Vdc, IB = 0) ICEO − 0.2 mAdc Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) ICES − 0.1 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 1 mAdc 30 10 150 − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (Note 3) hFE DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc) − Collector−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) VCE(sat) − 1 Vdc Base−Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc) VBE(on) − 1.5 Vdc fT 10 − MHz DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE 10 Vdc, f = 2 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. TYPICAL CHARACTERISTICS 200 1.4 VCE = 10 V 1.2 60 40 TJ = 150°C V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 100 25°C 20 -55°C 10 6 4 2 0.02 1 0.8 0.6 VBE(on) @ VCE = 4 V 0.4 TJ = 25°C 0.2 0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS) 1 0 0.02 2 VBE(sat) @ IC/IB = 5 Figure 1. DC Current Gain VCE(sat) @ IC/IB = 5 V 0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS) Figure 2. “On” Voltages http://onsemi.com 2 1 2 MJF47G 1 5 TJ = 25°C VCC = 200 V IC/IB = 5 tr 2 0.2 t, TIME (s) μ t, TIME (s) μ 0.5 td 0.1 0.05 1 0.5 tf 0.2 0.1 0.02 0.01 0.02 TJ = 25°C VCC = 200 V IC/IB = 5 ts 0.05 0.2 0.5 0.1 IC, COLLECTOR CURRENT (AMPS) 1 0.05 0.02 2 0.05 Figure 3. Turn−On Time 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1 2 Figure 4. Turn−Off Time TURN-ON PULSE APPROX +11 V VCC RC SCOPE Vin Vin 0 VEB(off) RB 51 t1 Cjd