MJH6284(NPN),
MJH6287(PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching motor control applications.
Features
•
•
•
•
Similar to the Popular NPN 2N6284 and the PNP 2N6287
Rugged RBSOA Characteristics
Monolithic Construction with Built−in Collector−Emitter Diode
These are Pb−Free Devices*
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DARLINGTON 20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
Max
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
20
40
Adc
Collector Current
− Continuous
− Peak
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
160
1.28
W
W/_C
TJ, Tstg
–65 to +150
_C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
SOT−93
(TO−218)
CASE 340D
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
0.78
RqJC
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−247
CASE 340L
STYLE 3
PD , POWER DISSIPATION (WATTS)
160
140
120
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
100
80
60
40
ORDERING INFORMATION
20
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 7
1
Publication Order Number:
MJH6284/D
MJH6284 (NPN), MJH6287 (PNP)
MARKING DIAGRAMS
TO−247
TO−218
MJH628x
AYWWG
1 BASE
AYWWG
MJH628x
3 EMITTER
1 BASE
2 COLLECTOR
3 EMITTER
2 COLLECTOR
MJH628x = Device Code
x = 4 or 7
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device Order Number
Package Type
Shipping
MJH6284G
TO−218
(Pb−Free)
30 Units / Rail
MJH6287G
TO−218
(Pb−Free)
30 Units / Rail
MJH6284G
TO−247
(Pb−Free)
30 Units / Rail
MJH6287G
TO−247
(Pb−Free)
30 Units / Rail
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2
MJH6284 (NPN), MJH6287 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
−
Vdc
Collector Cutoff Current (VCE = 50 Vdc, IB = 0)
ICEO
−
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
−
−
0.5
5.0
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
−
2.0
750
100
18,000
−
−
−
2.0
3.0
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0)
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
−
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
Vdc
Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc)
VBE(on)
−
2.8
Vdc
Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
VBE(sat)
−
4.0
Vdc
fT
4.0
−
MHz
−
−
400
600
300
−
−
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH6284
MJH6287
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
Cob
hfe
pF
SWITCHING CHARACTERISTICS
Typical
Resistive Load
Delay Time
VCC = 30 Vdc, IC = 10 Adc
IB1 = IB2 = 100 mA
Duty Cycle = 1.0%
Rise Time
Storage Time
Fall Time
Symbol
NPN
PNP
Unit
td
0.1
0.1
ms
tr
0.3
0.3
ts
1.0
1.0
tf
3.5
2.0
1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
NPN
MJH6284
VCC
-30 V
PNP
MJH6287
COLLECTOR
COLLECTOR
RC SCOPE
TUT
V2
APPROX
+12 V
RB
BASE
51
0
V1
APPROX
-8.0 V
≈ 8.0 k
D1
BASE
≈ 50
+4.0 V
25 ms
tr, tf, ≤ 10 ns
DUTY CYCLE = 1.0%
EMITTER
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
Figure 3. Darlington Schematic
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3
EMITTER
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJH6284 (NPN), MJH6287 (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.03
0.01
SINGLE PULSE
0.02
0.02
0.01
0.01
0.02 0.03
0.05
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 0.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.2 0.3
0.1
2.0 3.0 5.0
t, TIME (ms)
1.0
0.5
10
20
30
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
Figure 4. Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
IC, COLLECTOR CURRENT (AMPS)
50
20
0.1 ms
0.5 ms
10
1.0 ms
5.0 ms
5.0
dc
2.0
1.0
TJ = 150°C
0.5
SECOND BREAKDOWN LIMITED
0.2
0.1
0.05
2.0
BONDING WIRE LIMITED
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
5.0
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. MJH6284, MJH6287
FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS)
50
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
40
30
DUTY CYCLE = 10%
20
L = 200 mH
IC/IB ≥ 100
TC = 25°C
VBE(off) = 0-5.0 V
RBE = 47 W
10
0
0
30
100
60
10
20
40
80
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
110
Figure 6. Maximum RBSOA, Reverse Bias
Safe Operating Area
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4
MJH6284 (NPN), MJH6287 (PNP)
NPN
PNP
5000
3000
2000
3000
TJ = 150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 3.0 V
VCE = 3.0 V
1000
25°C
500
300
150
0.2
0.3
0.5
1.0
2000
25°C
1000
-55°C
700
500
-55°C
200
TJ = 150°C
2.0
3.0
5.0 7.0
10
300
0.2
20
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMPS)
2.0
3.0
5.0 7.0
10
20
IC, COLLECTOR CURRENT (AMPS)
2.8
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
2.6
TJ = 25°C
2.4
2.2
2.0
1.8
IC = 15 A
1.6
1.4
IC = 10 A
1.2
IC = 5.0 A
1.0
0.8
1.0
2.0 3.0 5.0
10
20 30
50
100 200 300 500
1000
2.8
2.6
2.4
2.2
2.0
1.8
IC = 15 A
1.6
IC = 10 A
1.4
1.2
IC = 5.0 A
1.0
0.8
1.0
2.0 3.0 5.0
IB, BASE CURRENT (mA)
10
20 30
50
100 200 300 500 1000
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
3.0
2.0
1.5
1.0
VBE @ VCE = 3.0 V
VBE(sat) @ IC/IB = 250
2.0
VBE(sat) @ IC/IB = 250
1.5
0.2 0.3 0.5 0.7 1.0
VBE(on) @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.5
0.1
TJ = 25°C
VCE(sat) @ IC/IB = 250
2.0 3.0 5.0 7.0 10
0.5
0.1
20 30
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 9. “On” Voltages
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
SCALE 1:1
C
Q
B
U
S
E
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
1
K
2
3
D
DATE 01/03/2002
J
H
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
MARKING DIAGRAM
V
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
AYWW
xxxxx
ANODE
CATHODE
ANODE
CATHODE
A
Y
WW
xxxxx
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42643B
SOT−93
= Assembly Location
= Year
= Work Week
= Device Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
STYLE 1:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
STYLE 5:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 6:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 3:
PIN 1.
2.
3.
4.
98ASB15080C
TO−247
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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