MJL3281A (NPN)
MJL1302A (PNP)
Complementary Bipolar
Power Transistors
Features
•
•
•
•
•
•
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Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 5 A
Excellent Gain Linearity
High BVCEO
High Frequency
These Devices are Pb−Free and are RoHS Compliant*
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
260 VOLTS
200 WATTS
Benefits
•
•
•
•
•
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
NPN
PNP
COLLECTOR 2, 4
Applications
COLLECTOR 2, 4
1
BASE
• High−End Consumer Audio Products
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
1
BASE
♦
•
♦
EMITTER 3
EMITTER 3
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector−Emitter Voltage
VCEO
260
Vdc
Collector−Base Voltage
VCBO
260
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
260
Vdc
IC
15
Adc
ICM
25
Adc
Base Current − Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
Watts
W/°C
TJ, Tstg
− 65 to
+150
°C
Symbol
Max
Unit
RθJC
0.625
°C/W
Collector Current − Continuous
Collector Current − Peak (Note 1)
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 11
1
2
3
TO−264
CASE 340G
STYLE 2
xxxx
A
YY
WW
G
1
1
3
BASE
EMITTER
2 COLLECTOR
= 3281 or 1302
= Location Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
THERMAL CHARACTERISTICS
Characteristic
MJLxxxxA
AYYWWG
Unit
Package
Shipping
MJL3281AG
TO−264
(Pb−Free)
25 Units/Rail
MJL1302AG
TO−264
(Pb−Free)
25 Units/Rail
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJL3281A/D
MJL3281A (NPN) MJL1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
260
−
−
50
−
5
4
1
−
−
75
75
75
75
45
150
150
150
150
−
−
3
30
−
−
600
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 260 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
Vdc
μAdc
μAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 100 Vdc, t = 1 s (non−repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
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2
MHz
pF
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJL1302A
NPN MJL3281A
60
VCE = 10 V
40
5V
30
20
10
TJ = 25°C
ftest = 1 MHz
0
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
VCE = 10 V
f,
T CURRENT BANDWIDTH PRODUCT (MHz)
f,
T CURRENT BANDWIDTH PRODUCT (MHz)
50
50
5V
40
30
20
TJ = 25°C
ftest = 1 MHz
10
0
0.1
10
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
PNP MJL1302A
NPN MJL3281A
1000
1000
TJ = 100°C
VCE = 5.0 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 5.0 V
25°C
100
-25°C
10
0.05
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
TJ = 100°C
-25°C
10
0.05
100
25°C
100
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
100
Figure 4. DC Current Gain
PNP MJL1302A
NPN MJL3281A
2.5
3.0
TJ = 25°C
IC/IB = 10
2.5
2.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
10
VBE(sat)
1.5
1.0
0.5
TJ = 25°C
IC/IB = 10
2.0
1.5
VBE(sat)
1.0
0.5
VCE(sat)
VCE(sat)
0
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 5. Typical Saturation Voltages
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Typical Saturation Voltages
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3
100
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
NPN MJL3281A
10
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
PNP MJL1302A
TJ = 25°C
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
10
TJ = 25°C
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
0.1
100
0.1
Figure 7. Typical Base−Emitter Voltage
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Typical Base−Emitter Voltage
PNP MJL1302A
NPN MJL3281A
10000
Cib
Cib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
10000
Cob
1000
100
1000
Cob
TJ = 25°C
ftest = 1 MHz
TJ = 25°C
ftest = 1 MHz
100
100
0.1
1.0
10
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. MJL1302A Typical Capacitance
Figure 10. MJL3281A Typical Capacitance
100
IC , COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second breakdown.
10 ms
10
50 ms
1 sec
1.0
250 ms
0.1
1.0
10
100
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 11. Active Region Safe Operating Area
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
DATE 17 DEC 2004
SCALE 1:2
Q
0.25 (0.010)
−B−
M
T B
−T−
M
C
E
U
N
A
R
1
2
L
3
P
F 2 PL
K
W
G
J
H
D 3 PL
0.25 (0.010)
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
M
T B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
S
STYLE 3:
PIN 1. GATE
2. SOURCE
3. DRAIN
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
GENERIC
MARKING DIAGRAM*
STYLE 4:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 5:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
XXXXXX
AYYWW
XXXXXX
A
YY
WW
= Specific Device Code
= Location Code
= Year
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42780B
TO−3BPL (TO−264)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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