MJL21195(PNP),
MJL21196(NPN)
Silicon Power Transistors
The MJL21195 and MJL21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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Features
•
•
•
•
•
•
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
Epoxy Meets UL 94, V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
16 A COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 V, 200 W
COMPLEMENTARY
COLLECTOR
2
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
IC
16
Adc
ICM
30
Adc
Base Current − Continuous
IB
5
Adc
Total Power Dissipation
@ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
TJ, Tstg
− 65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
RqJC
0.7
°C/W
1
BASE
COLLECTOR
2
1
BASE
3
EMITTER
3
EMITTER
MARKING
DIAGRAM
1
2
MJL2119x
AYYWWG
3
TO−264
CASE 340G
STYLE 2
x
A
YY
WW
G
= 5 or 6
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJL21195G
TO−264
(Pb−Free)
25 Units / Rail
MJL21196G
TO−264
(Pb−Free)
25 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 5
1
Publication Order Number:
MJL21195/D
MJL21195 (PNP), MJL21196 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
250
−
−
−
−
100
−
−
100
−
−
100
4.0
2.25
−
−
−
−
25
8.0
−
−
100
−
−
−
2.2
−
−
−
−
1.4
4
Unit
OFF CHARACTERISTICS (Note 2)
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
Vdc
mAdc
ICEO
OFF CHARACTERISTICS (Note 3)
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
mAdc
mAdc
SECOND BREAKDOWN (Note 3)
IS/b
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (Nonrepetitive)
(VCE = 80 Vdc, t = 1 s (Nonrepetitive)
Adc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS (Note 3)
THD
Total Harmonic Distortion at the Output
(VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS)
hFE unmatched
(Matched pair hFE = 50 @ 5 A/5 V)
hFE matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
%
−
0.8
−
−
0.08
−
4
−
−
−
−
500
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
MHz
Cob
pF
PNP MJL21195
6.5
F T, CURRENT BANDWIDTH PRODUCT (MHz)
F T, CURRENT BANDWIDTH PRODUCT (MHz)
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
6.0
VCE = 10 V
5.5
5.0
VCE = 5 V
4.5
4.0
3.5
TJ = 25°C
ftest = 1 MHz
3.0
2.5
2.0
0.1
1.0
10
NPN MJL21196
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VCE = 10 V
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
10
MJL21195 (PNP), MJL21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJL21195
NPN MJL21196
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
TJ = 100°C
100
25°C
-25°C
TJ = 100°C
100
25°C
-25°C
VCE = 20 V
VCE = 20 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
100
0.1
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJL21195
NPN MJL21196
100
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
TJ = 100°C
100
25°C
-25°C
TJ = 100°C
100
25°C
-25°C
VCE = 5 V
VCE = 5 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
100
0.1
Figure 5. DC Current Gain, VCE = 5 V
PNP MJL21195
100
NPN MJL21196
30
IC , COLLECTOR CURRENT (A)
2.0 A
25
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain, VCE = 5 V
30
IC , COLLECTOR CURRENT (A)
1.0
10
IC, COLLECTOR CURRENT (A)
1.5 A
20
1.0 A
15
IB = 0.5 A
10
5.0
2.0 A
1.5 A
25
1.0 A
20
IB = 0.5 A
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (V)
25
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. Typical Output Characteristics
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3
25
MJL21195 (PNP), MJL21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJL21195
NPN MJL21196
3.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
1.4
TJ = 25°C
IC/IB = 10
2.5
2.0
1.5
VBE(sat)
1.0
0.5
TJ = 25°C
IC/IB = 10
1.2
1.0
VBE(sat)
0.8
0.6
0.4
VCE(sat)
0.2
VCE(sat)
0
0
1.0
10
IC, COLLECTOR CURRENT (A)
100
0.1
Figure 10. Typical Saturation Voltages
PNP MJL21195
NPN MJL21196
10
TJ = 25°C
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0
10
100
TJ = 25°C
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
10
100
Figure 12. Typical Base−Emitter Voltage
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
100
IC , COLLECTOR CURRENT (AMPS)
1.0
IC, COLLECTOR CURRENT (A)
Figure 11. Typical Base−Emitter Voltage
10 ms
10
1 Sec
50 ms
1.0
250 ms
0.1
10
100
10
IC, COLLECTOR CURRENT (A)
1.0
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 9. Typical Saturation Voltages
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
0.1
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Active Region Safe Operating Area
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4
MJL21195 (PNP), MJL21196 (NPN)
10000
10000
C, CAPACITANCE (pF)
Cib
1000
Cob
1000
TJ = 25°C
ftest = 1 MHz
TJ = 25°C
ftest = 1 MHz
100
Cob
100
0.1
1.0
10
100
0.1
1.0
10
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 14. MJL21195 Typical Capacitance
Figure 15. MJL21196 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
Cib
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
DUT
0.5 W
0.5 W
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
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5
8.0 W
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
DATE 17 DEC 2004
SCALE 1:2
Q
0.25 (0.010)
−B−
M
T B
−T−
M
C
E
U
N
A
R
1
2
L
3
P
F 2 PL
K
W
G
J
H
D 3 PL
0.25 (0.010)
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
M
T B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
S
STYLE 3:
PIN 1. GATE
2. SOURCE
3. DRAIN
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
GENERIC
MARKING DIAGRAM*
STYLE 4:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 5:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
XXXXXX
AYYWW
XXXXXX
A
YY
WW
= Specific Device Code
= Location Code
= Year
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42780B
TO−3BPL (TO−264)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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