MJL4281A (NPN)
MJL4302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are power transistors for high
power audio.
Features
• 350 V Collector−Emitter Sustaining Voltage
• Gain Complementary:
•
•
•
•
Gain Linearity from 100 mA to 5 A
High Gain − 80 to 240
hFE = 50 (min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area − 1.0 A/100 V @ 1 Second
High fT
Pb−Free Packages are Available*
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15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
350 VOLTS, 230 WATTS
1
2
3
TO−264
CASE 340G
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
350
Vdc
Collector−Base Voltage
VCBO
350
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
350
Vdc
Collector Current − Continuous
Collector Current − Peak (Note 1)
IC
15
30
Adc
Base Current − Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
230
1.84
W
°C/W
TJ, Tstg
− 65 to +150
°C
Rating
Operating and Storage Junction
Temperature Range
MARKING DIAGRAM
MJL4xxxA
AYYWWG
1 BASE
xxx
A
YY
WW
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
RqJC
0.54
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Device
MJL4281A
MJL4302A
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 3
1
= 281 or 302
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
MJL4281AG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3 EMITTER
2 COLLECTOR
MJL4302AG
Package
Shipping
TO−264
25 Units/Rail
TO−264
(Pb−Free)
25 Units/Rail
TO−264
25 Units/Rail
TO−264
(Pb−Free)
25 Units/Rail
Publication Order Number:
MJL4281A/D
MJL4281A (NPN) MJL4302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
VCE(sus)
350
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector Cut−off Current
(VCE = 200 V, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
100
−
50
−
5.0
4.5
1.0
−
−
80
80
80
80
50
10
250
250
250
250
−
−
−
1.0
−
1.4
−
1.5
35
−
−
600
mAdc
mAdc
mAdc
SECOND BREAKDOWN
IS/b
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1.0 s (non−repetitive)
(VCE = 100 Vdc, t = 1.0 s (non−repetitive)
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 8.0 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
VCE(sat)
Emitter−Base Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 A)
VBE(sat)
Base−Emitter ON Voltage
(IC = 8.0 Adc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)
Cob
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2
MHz
pF
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
TJ = 100°C
100
TJ = 25°C
0.1
1
10
100
1
10
100
Figure 2. DC Current Gain, VCE = 5 V,
PNP MJL4302A
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
TJ = 25°C
0.1
1
10
100
TJ = 100°C
100
10
0.01
TJ = 25°C
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, VCE = 20 V,
NPN MJL4281A
Figure 4. DC Current Gain, VCE = 20 V,
PNP MJL4302A
2.0
1.8
1.2
1
0.8
Vbe(sat)
0.6
0.4
Vce(sat)
0.2
0.1
1
TJ = 25°C
Ic/Ib = 10
10
SATURATION VOLTAGE (V)
SATURATION VOLTAGE (V)
0.1
Figure 1. DC Current Gain, VCE = 5 V,
NPN MJL4281A
1.4
0
0.01
0.01
IC, COLLECTOR CURRENT (A)
TJ = 100°C
10
0.01
TJ = 25°C
IC, COLLECTOR CURRENT (A)
1000
100
100
10
10
0.01
TJ = 100°C
1.6
1.4
1.2
1.0
Vbe(sat)
0.8
0.6
0.4
Vce(sat)
0.2
100
0.0
0.01
0.1
1
TJ = 25°C
Ic/Ib = 10
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Typical Saturation Voltage,
NPN MJL4281A
Figure 6. Typical Saturation Voltage,
PNP MJL4302A
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3
100
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
2.5
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.2
1.0
0.8
0.6
0.4
0.2
fT, CURRENT BANDWIDTH PRODUCT (MHz)
0.0
0.01
0.1
1
10
100
1.0
0.5
0.0
0.01
0.1
1
10
Figure 7. Typical Base−Emitter Voltages,
NPN MJL4281A
Figure 8. Typical Base−Emitter Voltages,
PNP MJL4302A
60
VCE = 5 V
50
40
VCE = 10 V
30
20
TJ = 25°C
ftest = 1 MHz
0
1.5
IC, COLLECTOR CURRENT (A)
70
10
2.0
IC, COLLECTOR CURRENT (A)
0.1
1
10
fT, CURRENT BANDWIDTH PRODUCT (MHz)
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.4
100
70
60
VCE = 5 V
50
VCE = 10 V
40
30
20
10
0
0.1
TJ = 25°C
ftest = 1 MHz
1
10
IC, COLLECTOR CURRENT (A)
Figure 9. Typical Current Gain Bandwidth Product,
NPN MJL4281A
Figure 10. Typical Current Gain Bandwidth Product,
PNP MJL4302A
100
10 mS
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100
10
1 Sec
1
100 mS
0.1
TJ = 25°C
0.01
1
10 mS
10
1 Sec
1
100 mS
0.1
TJ = 25°C
0.01
10
100
1000
1
Vce, COLLECTOR−EMITTER VOLTAGE (V)
10
100
1000
Vce, COLLECTOR−EMITTER VOLTAGE (V)
Figure 11. Active Region Safe Operating Area,
NPN MJL4281A
Figure 12. Active Region Safe Operating Area,
PNP MJL4302A
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
DATE 17 DEC 2004
SCALE 1:2
Q
0.25 (0.010)
−B−
M
T B
−T−
M
C
E
U
N
A
R
1
2
L
3
P
F 2 PL
K
W
G
J
H
D 3 PL
0.25 (0.010)
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
M
T B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
S
STYLE 3:
PIN 1. GATE
2. SOURCE
3. DRAIN
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
GENERIC
MARKING DIAGRAM*
STYLE 4:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 5:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
XXXXXX
AYYWW
XXXXXX
A
YY
WW
= Specific Device Code
= Location Code
= Year
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42780B
TO−3BPL (TO−264)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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