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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MJW18020
NPN Silicon Power
Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
Features
•
•
•
•
•
High and Excellent Gain Linearity
Fast and Very Tight Switching Times Parameters tsi and tfi
Very Stable Leakage Current due to the Planar Structure
High Reliability
Pb−Free Package is Available*
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
450
Vdc
Collector−Emitter Breakdown Voltage
VCES
1000
Vdc
Collector−Base Voltage
VCBO
1000
Vdc
Emitter−Base Voltage
VEBO
9.0
Vdc
Collector Current − Continuous
− Peak (Note 1)
IC
30
45
Adc
Base Current
IB
6.0
10
Adc
PD
250
2.0
W
W/_C
TJ, Tstg
−65 to +150
_C
− Continuous
− Peak (Note 1)
Total Power Dissipation @ TC = 25_C
Derate Above 25_C
Operating and Storage Junction
Temperature Range
30 AMPERES
1000 VOLTS BVCES
450 VOLTS BVCEO, 250 WATTS
1
MAXIMUM RATINGS
Rating
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2
MARKING DIAGRAM
MJW18020
AYWWG
1 BASE
3 EMITTER
2 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
TO−247
CASE 340L
3
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.5
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
50
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
TL
275
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJW18020
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
MJW18020G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 3
1
Publication Order Number:
MJW18020/D
MJW18020
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
−
−
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
−
−
100
mAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
ICES
−
−
100
500
mAdc
Emitter Cutoff Current
(VCE = 9 Vdc, IC = 0)
IEBO
−
−
100
mAdc
hFE
14
−
8
5
5.5
4
14
30
16
14
9
7
25
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 10 Adc VCE = 2 Vdc)
(IC = 20 Adc VCE = 2 Vdc)
(IC = 10 mAdc VCE = 5 Vdc)
(TC = 125°C)
(TC = 125°C)
(TC = 125°C)
Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc)
(IC = 20 Adc, IB = 4 Adc)
VBE(sat)
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
VCE(sat)
34
−
−
−
−
−
−
0.97
1.15
1.25
1.5
−
−
−
−
0.2
0.3
0.5
0.9
0.6
−
1.5
2.0
fT
−
13
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
−
300
500
pF
Input Capacitance
(VEB = 8.0)
Cib
−
7000
9000
pF
tOn
−
540
750
ns
Storage Time
ts
−
4.75
6
ms
Fall Time
tf
−
380
500
ns
(TC = 125°C)
(IC = 20 Adc, IB = 4 Adc)
(TC = 125°C)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 ms)
Turn−On Time
(IC = 10 Adc, IB1 = IB2 = 2 Adc,
Vcc = 125 V)
Turn−Off Time
tOff
−
5.2
6.5
ms
tOn
−
965
1200
ns
ts
−
2.9
3.5
ms
tf
−
350
500
ns
tOff
−
3.25
4
ms
tfi
−
142
250
ns
Storage Time
tsi
−
4.75
6
ms
Crossover Time
tc
−
320
500
ns
tfi
−
350
500
ns
Storage Time
tsi
−
3.0
3.5
ms
Crossover Time
tc
−
500
750
ns
Turn−On Time
Storage Time
(IC= 20 Adc, IB1 = IB2 = 4 Adc,
Vcc = 125 V)
Fall Time
Turn−Off Time
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp= 300 V , Vcc = 15 V, L = 200 mH)
Fall Time
Fall Time
(IC = 10 Adc, IB1 = IB2 = 2 Adc)
(IC = 20 Adc, IB1 = IB2 = 4 Adc)
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2
MJW18020
TYPICAL CHARACTERISTICS
100
TJ = 25°C
TJ = 125°C
HFE, DC CURRENT GAIN
HFE, DC CURRENT GAIN
100
TJ = −20°C
10
VCE = 2.0 V
1.0
0.01
0.1
1.0
10
TJ = −20°C
10
VCE = 5.0 V
1.0
0.01
100
0.1
IC, COLLECTOR CURRENT (A)
100
100.0
Ic/Ib = 10
VCE, VOLTAGE (VOLTS)
Ic/Ib = 5.0
VCE, VOLTAGE (VOLTS)
10
Figure 2. DC Current Gain, VCE = 5.0 V
100.0
10.0
10.0
1.0
TJ = −20°C
TJ = 125°C
0.1
0.0
0.001
0.1
1.0
TJ = −20°C
TJ = 125°C
0.1
TJ = 25°C
TJ = 25°C
0.01
1.0
10
0.0
0.001
100
IC, COLLECTOR CURRENT (A)
0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (A)
Figure 3. Typical Collector−Emitter Saturation
Voltage, IC/IB = 5.0
Figure 4. Typical Collector−Emitter Saturation
Voltage, IC/IB = 10
10.0
10.0
Ic/Ib = 10
VBE, VOLTAGE (VOLTS)
Ic/Ib = 5.0
VBE, VOLTAGE (VOLTS)
1.0
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain, VCE = 2.0 V
TJ = −20°C
1.0
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
0.1
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
TJ = −20°C
1.0
TJ = 25°C
TJ = 125°C
0.1
0.001
100
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 6. Typical Base−Emitter Saturation
Voltage, IC/IB = 10
Figure 5. Typical Base−Emitter Saturation
Voltage, IC/IB = 5.0
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3
100
MJW18020
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (AMPS)
100.00
Cib
1000
Cob
100
1
10
100
1.0 ms
Extended SOA
DC
10.00
10000
10 ms
5 ms
1 ms
1.00
0.10
0.01
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
Figure 8. Forward Bias Safe Operating Area
40
IC, COLLECTOR CURRENT (AMPS)
C, CAPACITANCE (pF)
100000
TC v 125°C
Ic/Ib > 4
LC = 500 mH
30
20
−1.5 V
10
−5 V
VBE = 0 V
0
0
200
400
600
800
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 9. Reverse Bias Safe Operating Area
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4
1000
MJW18020
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
H
G
D 3 PL
0.25 (0.010)
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJW18020/D
