MJW21192G

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • • DC Current Gain Specified up to 8.0 A at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms TO−247AE Package Pb−Free Packages are Available* http://onsemi.com 8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W MAXIMUM RATINGS Symbol MJW21191 MJW21192 Unit VCEO 150 Vdc Collector−Base Voltage VCB 150 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 8.0 16 Adc Rating Collector−Emitter Voltage Collector Current − Continuous − Peak Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 125 0.65 W W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit RqJC 1.0 _C/W RqJA 50 _C/W Operating and Storage Junction Temperature Range TO−247 CASE 340L STYLE 3 1 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MJW2119x AYWWG 1 BASE 2 COLLECTOR x A Y WW G 1000 C, CAPACITANCE (pF) PNP NPN 100 3 EMITTER = 1 or 2 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION 10 Device Package Shipping MJW21191 TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail MJW21191G 1.0 1.0 10 100 VR, REVERSE VOLTAGE (V) 1000 MJW21192 MJW21192G Figure 1. Typical Capacitance @ 25°C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 3 1 Publication Order Number: MJW21192/D MJW21192 (NPN), MJW21191 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 150 − − 10 − 10 15 5.0 100 − − − 1.0 2.0 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 1.6 Adc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 2.0 Vdc) VBE(on) − 2.0 Vdc fT 4.0 − MHz DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = ⎪hfe⎪• ftest. 1.0 TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 P(pk) DUTY CYCLE, D = t1/t2 0.2 0.1 t1 0.1 t2 ZθJC(t) = r(t) RθJC RθJC = 1.65°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZθJC(t) 0.05 0.02 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 2. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 2 MJW21192 (NPN), MJW21191 (PNP) NPN — MJW21192 PNP — MJW21191 100 IC , COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 10ms 100 ms 10 250ms 1.0 10 ms 100 ms 10 250 ms 1.0 0.1 0.1 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 1000 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 4. PNP — MJW21191 Safe Operating Area Figure 3. NPN — MJW21192 Safe Operating Area TYPICAL CHARACTERISTICS NPN — MJW21192 PNP — MJW21191 1000 1000 100 h FE , DC CURRENT GAIN h FE, DC CURRENT GAIN 50°C 50°C 100°C 100°C 100 25°C 10 1.0 25°C 10 1.0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. PNP — MJW21191 VCE = 2.0 V DC Current Gain Figure 5. NPN — MJW21192 VCE = 2.0 V DC Current Gain http://onsemi.com 3 100 MJW21192 (NPN), MJW21191 (PNP) NPN — MJW21192 PNP — MJW21191 1000 1000 100 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 50°C 50°C 100°C 100 25°C 10 1.0 25°C 10 1.0 0.01 0.1 1.0 10 100 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. NPN — MJW21192 VCE = 5.0 V DC Current Gain Figure 8. PNP — MJW21191 VCE = 5.0 V DC Current Gain 100 1.0 1.0 100°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100°C 25°C 0.1 0.1 100°C 25°C 0.01 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 0.1 10 Figure 9. NPN — MJW21192 VCE(sat) IC/IB = 5.0 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 10. PNP — MJW21191 VCE(sat) IC/IB = 5.0 1.0 10 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100°C 25°C 0.1 1.0 0.1 100°C 25°C 0.01 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 11. NPN — MJW21192 VCE(sat) IC/IB = 10 10 0.1 SPACE http://onsemi.com 4 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 12. PNP — MJW21191 VCE(sat) IC/IB = 10 10 MJW21192 (NPN), MJW21191 (PNP) NPN — MJW21192 PNP — MJW21191 10 1.0 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 10 50°C 1.0 25°C 100°C 50°C 100°C 0.1 0.1 0.001 1.0 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 14. PNP — MJW21191 VCE = 2.0 V VBE(on) Curve Figure 13. NPN — MJW21192 VCE = 2.0 V VBE(on) Curve http://onsemi.com 5 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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