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MKP1V160RL

MKP1V160RL

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DO41

  • 描述:

    SIDAC 150-170V 900MA AXIAL

  • 数据手册
  • 价格&库存
MKP1V160RL 数据手册
MKP1V120 Series Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Features http://onsemi.com SIDACS( ) 0.9 AMPERES RMS 120 − 240 VOLTS • • • • • • • • High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR’s and Triacs Indicates UL Registered — File #E116110 These are Pb−Free Devices* MT1 MT2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit V "90 "180 "0.9 "4.0 −40 to +125 −40 to +150 A A Peak Repetitive Off−State Voltage VDRM, (Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) VRRM MKP1V120, MKP1V130, MKP1V160 MKP1V240 On-State Current RMS (TL = 80°C, Lead Length = 3/8″, All Conduction Angles) Peak Non−repetitive Surge Current (60 Hz One Cycle Sine Wave, TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range IT(RMS) ITSM TJ Tstg AXIAL LEAD CASE 59 STYLE 2 MARKING DIAGRAM °C °C A MKP 1Vxx0 YYWW G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Lead Length = 3/8″ Lead Solder Temperature (Lead Length w 1/16″ from Case, 10 s Max) Symbol RqJL TL Max 40 260 Unit °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location MKP1Vxx0 = Device Number x= 12, 13, 16 or 24 YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 October, 2006 − Rev. 10 Publication Order Number: MKP1V120/D MKP1V120 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Repetitive Peak Off−State Current TJ = 25°C (50 to 60 Hz Sine Wave) VDRM = 90 V, MKP1V120, MKP1V130 and MKP1V160 VDRM = 180 V, MKP1V240 ON CHARACTERISTICS Breakover Voltage IBO = 35 mA MKP1V120 35 mA MKP1V130 200 mA MKP1V160 35 mA MKP1V240 Peak On−State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%) Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL = 100 Ohm) Switching Resistance (Sine Wave, 50 to 60 Hz) DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of On−State Current, Critical Damped Waveform Circuit (IPK = 130 Amps, Pulse Width = 10 msec) di/dt − 120 − A/ms VBO 110 120 150 220 VTM IH RS − − 0.1 − − − − 1.3 − − 130 140 170 250 1.5 100 − V mA kW V IDRM − − 5.0 mA Symbol Min Typ Max Unit ORDERING INFORMATION Device MKP1V120RL MKP1V120RLG MKP1V130RL MKP1V130RLG MKP1V160 MKP1V160G MKP1V160RL MKP1V160RLG MKP1V240 MKP1V240G MKP1V240RL MKP1V240RLG Package* DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead DO−41, Axial Lead Shipping† 5000 / Tape & Reel 5000 / Tape & Reel 5000 / Tape & Reel 5000 / Tape & Reel 1000 Units / Bulk 1000 Units / Bulk 5000 / Tape & Reel 5000 / Tape & Reel 1000 Units / Bulk 1000 Units / Bulk 5000 / Tape & Reel 5000 / Tape & Reel *This package is inherently Pb−Free. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MKP1V120 Series Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current ITM IH IS IDRM VS I(BO) + Voltage V(BO) VTM Slope = RS Symbol IDRM VDRM VBO IBO IH VTM ITM Parameter Off State Leakage Current Off State Repetitive Blocking Voltage Breakover Voltage Breakover Current Holding Current On State Voltage Peak on State Current VDRM RS + (V (BO) – V S) (I S – I (BO)) TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C) 140 IT(RMS) , ON−STATE CURRENT (AMPS) 130 120 110 100 90 80 70 60 50 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 TJ = 125°C Sine Wave Conduction Angle = 180°C TL 3/ ″ 8 3/ ″ 8 1.0 0.8 TJ = 125°C Sine Wave Conduction Angle = 180°C Assembled in PCB Lead Length = 3/8″ 0.6 0.4 0.2 0 20 40 60 80 100 120 140 IT(RMS), ON−STATE CURRENT (AMPS) TA, MAXIMUM AMBIENT TEMPERATURE (°C) Figure 1. Maximum Lead Temperature Figure 2. Maximum Ambient Temperature I T , INSTANTANEOUS ON−STATE CURRENT (AMPS) PRMS , POWER DISSIPATION (WATTS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0 1.0 2.0 3.0 4.0 5.0 TJ = 25°C 125°C 1.25 TJ = 25°C Conduction Angle = 180°C 1.00 0.75 0.50 0.25 0 0.2 0.4 0.6 0.8 1.0 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) IT(RMS), ON−STATE CURRENT (AMPS) Figure 3. Typical On−State Voltage Figure 4. Typical Power Dissipation http://onsemi.com 3 MKP1V120 Series THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 5.0 10 20 t, TIME (ms) 50 100 200 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady−state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL 500 1.0 k 2.0 k 5.0 k 10 k Figure 5. Thermal Response VBO , BREAKOVER VOLTAGE (NORMALIZED) 1.4 IH , HOLDING CURRENT (NORMALIZED) 1.0 1.2 1.0 0.9 0.8 0.6 0.4 −60 0.8 −60 −40 −20 0 20 40 60 80 100 120 140 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Breakover Voltage Figure 7. Typical Holding Current 100 IPK, PEAK CURRENT (AMPS) 10 IPK 10% tw 1.0 0.1 1.0 tw, PULSE WIDTH (ms) 10 100 Figure 8. Pulse Rating Curve http://onsemi.com 4 MKP1V120 Series PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. K F D A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− STYLE 2: NO POLARITY ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MKP1V120/D
MKP1V160RL 价格&库存

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