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MKP3V120

MKP3V120

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    MKP3V120 - Sidac High Voltage Bidirectional Triggers 1 AMPERE RMS 120 and 240 VOLTS - ON Semiconduct...

  • 数据手册
  • 价格&库存
MKP3V120 数据手册
MKP3V120, MKP3V240 Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the AC power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Features http://onsemi.com • • • • • • • • SIDACS ( ) 1 AMPERE RMS 120 and 240 VOLTS MT1 MT2 High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR’s and Triacs Indicates UL Registered − File #E116110 These are Pb−Free Devices* MARKING DIAGRAM AXIAL LEAD (No Polarity) CASE 267 STYLE 2 Value Unit V "90 "180 "1.0 "20 A A A MKP 3V120 YYWW G G A = Assembly Location YY, Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage VDRM, (Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) VRRM MKP3V120 MKP3V240 On-State RMS Current (TL = 80°C, Lead Length = 3/8″, All Conduction Angles) Peak Non−Repetitive Surge Current (60 Hz One Cycle Sine Wave, Peak Value, TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range IT(RMS) ITSM TJ Tstg −40 to +125 −40 to +150 °C °C ORDERING INFORMATION Device MKP3V120 Package Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Shipping † 500 Units/Box 500 Units/Box 1500/Tape & Reel 1500/Tape & Reel 500 Units/Box 500 Units/Box 1500/Tape & Reel 1500/Tape & Reel THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Lead Length = 3/8″) Lead Solder Temperature (Lead Length w 1/16″ from Case, 10 s Max) Symbol RqJL TL Max 15 260 Unit °C/W °C MKP3V120G MKP3V120RL MKP3V120RLG MKP3V240 MKP3V240G MKP3V240RL MKP3V240RLG Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 February, 2006− Rev. 4 Publication Order Number: MKP3V120/D MKP3V120, MKP3V240 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Repetitive Peak Off−State Current (50 to 60 Hz Sine Wave) VDRM = 90 V VDRM = 180 V ON CHARACTERISTICS Breakover Voltage, IBO = 200 mA MKP3V120 MKP3V240 Breakover Current Peak On−State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%) Dynamic Holding Current (Sine Wave, 60 Hz, RL = 100 W) Switching Resistance (Sine Wave, 50 to 60 Hz) DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of On−State Current, Critical Damped Waveform Circuit (IPK = 130 W, Pulse Width = 10 msec) di/dt − 120 − A/ms IBO VTM IH RS VBO 110 220 − − − 0.1 − − − 1.1 − − 130 250 200 1.5 100 − mA V mA kW V IDRM MKP3V120 MKP3V240 − − 10 mA Symbol Min Typ Max Unit Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current ITM IH IS IDRM VS I(BO) + Voltage V(BO) VTM Slope = RS Symbol IDRM VDRM VBO IBO IH VTM ITM Parameter Off State Leakage Current Off State Repetitive Blocking Voltage Breakover Voltage Breakover Current Holding Current On State Voltage Peak on State Current VDRM RS + (V (BO) – V S) (I S – I (BO)) http://onsemi.com 2 MKP3V120, MKP3V240 CURRENT DERATING TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) ° 130 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) 120 α α = Conduction Angle TJ Rated = 125°C α 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 a = 180° α = Conduction Angle TJ Rated = 125°C 110 100 90 80 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 a = 180° 1.6 1.8 2.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) IT(AV), AVERAGE ON−STATE CURRENT (AMPS) Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature 1.0 0.8 0.6 0.4 0.3 0.2 25°C 125°C PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) I T , INSTANTANEOUS ON−STATE CURRENT (AMPS) 1.25 a = 180° α α = Conduction Angle TJ Rated = 125°C 1.00 0.75 0.50 0.25 0.1 0.8 0.9 1.0 1.1 1.2 1.3 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) 0 0.2 0.4 0.6 0.8 1.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) Figure 3. Typical Forward Voltage Figure 4. Typical Power Dissipation http://onsemi.com 3 MKP3V120, MKP3V240 THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. LEAD LENGTH = 1/4″ The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady−state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL 2.0 k 5.0 k 10 k 20 k Figure 5. Thermal Response TYPICAL CHARACTERISTICS 100 I(BO) , BREAKOVER CURRENT (m A) 90 IH , HOLDING CURRENT (mA) 80 70 60 50 40 30 20 10 0 −60 −40 −20 0 20 40 60 80 100 120 140 250 225 200 175 150 125 100 75 50 25 0 −60 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Breakover Current Figure 7. Typical Holding Current http://onsemi.com 4 MKP3V120, MKP3V240 PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G K D 1 A 2 NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267−04 OBSOLETE, NEW STANDARD 267−05. INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 −−− NO POLARITY MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 −−− B K DIM A B D K STYLE 2: ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MKP3V120/D
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