MKP3V120RLG

MKP3V120, MKP3V240 Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the AC power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Features • • • • • • • • High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR’s and Triacs Indicates UL Registered − File #E210057 These are Pb−Free Devices* http://onsemi.com SIDACS ( ) 1 AMPERE RMS 120 and 240 VOLTS MT1 MT2 MARKING DIAGRAM AXIAL LEAD (No Polarity) CASE 267 STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage VDRM, (Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) VRRM MKP3V120 MKP3V240 Value V "90 "180 IT(RMS) "1.0 A ITSM "20 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C On-State RMS Current (TL = 80°C, Lead Length = 3/8″, All Conduction Angles) Peak Non−Repetitive Surge Current (60 Hz One Cycle Sine Wave, Peak Value, TJ = 125°C) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Lead Length = 3/8″) Lead Solder Temperature (Lead Length w 1/16″ from Case, 10 s Max) A MKP 3Vxx0 YYWW G G Unit A = Assembly Location xx = 12 or 24 YY, Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† Symbol Max Unit MKP3V120G Axial Lead* 500 Units/Box RqJL 15 °C/W MKP3V120RLG Axial Lead* 1500/Tape & Reel TL 260 °C MKP3V240G Axial Lead* 500 Units/Box MKP3V240RLG Axial Lead* 1500/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 July, 2014− Rev. 7 1 Publication Order Number: MKP3V120/D MKP3V120, MKP3V240 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM − − 10 mA 110 220 − − 130 250 OFF CHARACTERISTICS Repetitive Peak Off−State Current (50 to 60 Hz Sine Wave) VDRM = 90 V VDRM = 180 V MKP3V120 MKP3V240 ON CHARACTERISTICS Breakover Voltage, IBO = 200 mA VBO V MKP3V120 MKP3V240 Breakover Current IBO − − 200 mA Peak On−State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%) VTM − 1.1 1.5 V Dynamic Holding Current (Sine Wave, 60 Hz, RL = 100 W) IH − − 100 mA Switching Resistance (Sine Wave, 50 to 60 Hz) RS 0.1 − − kW di/dt − 120 − A/ms DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of On−State Current, Critical Damped Waveform Circuit (IPK = 130 W, Pulse Width = 10 msec) Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current Symbol Parameter IDRM Off State Leakage Current VDRM Off State Repetitive Blocking Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage ITM Peak on State Current ITM VTM Slope = RS IH IS IDRM VDRM RS + http://onsemi.com 2 VS I(BO) + Voltage V(BO) (V (BO) – V S) (I S – I (BO)) MKP3V120, MKP3V240 CURRENT DERATING TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) 130 120 α α = Conduction Angle TJ Rated = 125°C 110 90 a = 180° 80 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 α = Conduction Angle TJ Rated = 125°C 120 100 80 a = 180° 60 40 20 0 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 α 140 1.0 1.25 25°C 0.8 125°C a = 180° 1.00 0.6 0.4 α α = Conduction Angle TJ Rated = 125°C 0.75 0.3 2.0 0.50 0.2 0.25 0.1 0.8 0.9 1.0 1.1 1.2 1.3 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0 Figure 3. Typical Forward Voltage 0.2 0.4 0.6 0.8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 4. Typical Power Dissipation http://onsemi.com 3 1.0 MKP3V120, MKP3V240 THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 0.5 0.3 0.2 0.1 0.05 LEAD LENGTH = 1/4″ The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: 0.03 0.02 TJ = TL + DTJL 0.01 0.2 0.5 1.0 2.0 5.0 20 10 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k t, TIME (ms) Figure 5. Thermal Response TYPICAL CHARACTERISTICS 90 225 80 200 IH , HOLDING CURRENT (mA) 250 I(BO) , BREAKOVER CURRENT ( mA) 100 70 60 50 40 30 20 150 125 100 75 50 25 10 0 -60 175 -40 -20 0 20 40 60 80 100 120 0 -60 140 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Breakover Current Figure 7. Typical Holding Current http://onsemi.com 4 120 140 MKP3V120, MKP3V240 PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G K NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267-04 OBSOLETE, NEW STANDARD 267-05. A D 1 2 B K DIM A B D K INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 --- STYLE 2: NO POLARITY ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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