MKP9V160

MKP9V160 Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Features http://onsemi.com SIDACS ( ) 0.9 AMPS RMS, 160 VOLTS MT1 MT2 • • • • • • • • High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR’s and Triacs Indicates UL Registered − File #E116110 Pb−Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) On-State Current RMS (TL = 80°C, Lead Length = 3/8″″ All Conduction Angles) Peak Non−repetitive Surge Current (60 Hz One Cycle Sine Wave, TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) Value "90 "0.9 Unit V A DO−41 AXIAL LEAD CASE 59 STYLE 2 ITSM TJ Tstg Symbol RqJL TL "4.0 −40 to +125 −40 to +150 A °C °C MARKING DIAGRAM A MKP 9V160 YYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Lead Lead Length = 3/8″ Lead Solder Temperature (Lead Length w 1/16″ from Case, 10 s Max) Max 40 260 Unit °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device MKP9V160RL MKP9V160RLG Package Axial Lead* Axial Lead* Shipping† 5000 Tape & Reel 5000 Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 1 1 Publication Order Number: MKP9V160/D MKP9V160 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Repetitive Peak Off−State Current (50 to 60 Hz Sine Wave) ON CHARACTERISTICS Breakover Voltage IBO = 200 mA Peak On−State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%) Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL = 100 W) Switching Resistance (Sine Wave, 50 to 60 Hz) DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of On−State Current, Critical Damped Waveform Circuit (IPK = 130 A, Pulse Width = 10 msec) di/dt − 120 − A/ms VBO VTM IH RS 150 − − 0.1 − 1.3 − − 170 1.5 100 − V V mA kW TJ = 25°C VDRM = 90 V IDRM − − 5.0 mA Symbol Min Typ Max Unit Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current Symbol IDRM VDRM VBO IBO IH VTM ITM Parameter Off State Leakage Current Off State Repetitive Blocking Voltage Breakover Voltage Breakover Current Holding Current On State Voltage Peak on State Current ITM IH VTM Slope = RS IS IDRM VDRM VS I(BO) + Voltage V(BO) RS + (V (BO) – V S) (I S – I (BO)) http://onsemi.com 2 MKP9V160 TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C) 140 IT(RMS) , ON−STATE CURRENT (AMPS) 130 120 110 100 90 80 70 60 50 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 IT(RMS), ON−STATE CURRENT (AMPS) TA, MAXIMUM AMBIENT TEMPERATURE (°C) TJ = 125°C Sine Wave Conduction Angle = 180°C TL 3/ ″ 8 3/ ″ 8 1.0 0.8 TJ = 125°C Sine Wave Conduction Angle = 180°C Assembled in PCB Lead Length = 3/8″ 0.6 0.4 0.2 Figure 1. Maximum Lead Temperature I T , INSTANTANEOUS ON−STATE CURRENT (AMPS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0 1.0 2.0 3.0 4.0 5.0 0 TJ = 25°C 125°C 1.25 PRMS , POWER DISSIPATION (WATTS) Figure 2. Maximum Ambient Temperature 1.00 TJ = 25°C Conduction Angle = 180°C 0.75 0.50 0.25 0.2 0.4 0.6 0.8 1.0 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) IT(RMS), ON−STATE CURRENT (AMPS) Figure 3. Typical On−State Voltage Figure 4. Typical Power Dissipation THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 5.0 10 20 t, TIME (ms) 50 100 200 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady−state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL 500 1.0 k 2.0 k 5.0 k 10 k Figure 5. Thermal Response http://onsemi.com 3 MKP9V160 VBO , BREAKOVER VOLTAGE (NORMALIZED) 1.4 IH , HOLDING CURRENT (NORMALIZED) 1.0 1.2 1.0 0.9 0.8 0.6 0.4 −60 0.8 −60 −40 −20 0 20 40 60 80 100 120 140 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Breakover Voltage Figure 7. Typical Holding Current 100 IPK, PEAK CURRENT (AMPS) 10 IPK 10% tw 1.0 0.1 1.0 tw, PULSE WIDTH (ms) 10 100 Figure 8. Pulse Rating Curve http://onsemi.com 4 MKP9V160 PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U B K F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− NO POLARITY MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− D A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K STYLE 2: ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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