MM3Z2V4T1G

MM3Z2V4T1 SERIES Zener Voltage Regulators 200 mW SOD−323 Surface Mount This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Specification Features: http://onsemi.com 1 Cathode 2 Anode • Standard Zener Breakdown Voltage Range − 2.4 V to 75 V • Steady State Power Rating of 200 mW • Small Body Outline Dimensions: • • • • 0.067” x 0.049” (1.7 mm x 1.25 mm) Low Body Height: 0.035” (0.9 mm) Package Weight: 4.507 mg/Unit ESD Rating of Class 3 (>16 kV) per Human Body Model Pb−Free Packages are Available 1 2 SOD−323 CASE 477 STYLE 1 Mechanical Characteristics: CASE: Void-free, Transfer-Molded Plastic FINISH: All External Surfaces are Corrosion Resistant MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM 260°C for 10 Seconds LEADS: Plated with Pb−Sn or Sn Only (Pb−Free) POLARITY: Cathode Indicated by Polarity Band FLAMMABILITY RATING: UL 94 V−0 MOUNTING POSITION: Any MAXIMUM RATINGS Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD 200 1.5 RqJA TJ, Tstg 635 −65 to +150 mW mW/°C °C/W °C Max Unit xx G G M xx = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MM3ZxxxT1 MM3ZxxxT1G Package SOD−323 SOD−323 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 Minimum Pad †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2006 1 November, 2006 − Rev. 7 Publication Order Number: MM3Z2V4T1/D MM3Z2V4T1 SERIES ELECTRICAL CHARACTERISTICS Symbol VZ IZT ZZT IZK ZZK IR VR IF VF QVZ C Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF Maximum Temperature Coefficient of VZ Max. Capacitance @VR = 0 and f = 1 MHz Parameter Reverse Zener Voltage @ IZT IF I VZ VR IR VF IZT V Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Zener Voltage (Note 2) VZ (Volts) Min 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 14.3 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 Nom 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13.25 15 16.2 18 20 22 24.2 27 30 33 36 39 43 47 51 56 62 68 75 Max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.8 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 @ IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Zener Impedance ZZT @ IZT W 100 100 100 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 200 215 240 255 ZZK @ IZK W 1000 1000 1000 1000 1000 1000 1000 800 500 200 100 160 160 160 160 160 160 80 80 80 80 80 100 100 120 300 300 300 500 500 500 500 500 500 500 500 500 mA 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Leakage Current IR @ VR mA 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.2 0.1 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 Volts 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 7.0 8.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.2 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 QVZ (mV/k) @ IZT Min −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 Max 0 0 0 0 0 −2.5 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10 11 13 14 16 18 20 22 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 C @ VR = 0 f = 1 MHz pF 450 450 450 450 450 450 450 260 225 200 185 155 140 135 130 130 130 130 120 110 105 100 85 85 80 70 70 70 70 45 40 40 40 40 35 35 35 Device* MM3Z2V4T1, MM3Z2V7T1, MM3Z3V0T1, MM3Z3V3T1, MM3Z3V6T1, MM3Z3V9T1, MM3Z4V3T1, MM3Z4V7T1, MM3Z5V1T1, MM3Z5V6T1, MM3Z6V2T1, MM3Z6V8T1, MM3Z7V5T1, MM3Z8V2T1, MM3Z9V1T1, G G G G G G G G G G G G G G G Device Marking 00 01 02 05 06 07 08 09 0A 0C 0E 0F 0G 0H 0K 0L 0M 0N 0P 0T 0U 0W 0Z 10 11 12 14 18 19 20 21 1A 1C 1D 1E 1F 1G MM3Z10VT1, G MM3Z11VT1, G MM3Z12VT1, G MM3Z13VT1, G MM3Z15VT1, G MM3Z16VT1, MM3Z18VT1, MM3Z20VT1, MM3Z22VT1, MM3Z24VT1, MM3Z27VT1, MM3Z30VT1, MM3Z33VT1, MM3Z36VT1, MM3Z39VT1, MM3Z43VT1, MM3Z47VT1, MM3Z51VT1, MM3Z56VT1, MM3Z62VT1 G G G G G G G G G G G G G G MM3Z68VT1, G MM3Z75VT1, G *The “G’’ suffix indicates Pb−Free package available. 2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. http://onsemi.com 2 MM3Z2V4T1 SERIES TYPICAL CHARACTERISTICS Z ZT , DYNAMIC IMPEDANCE (Ω) 1000 100 IZ = 1 mA 10 5 mA IF, FORWARD CURRENT (mA) TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz 1000 100 10 150°C 75°C 1.0 0.4 0.5 25°C 0°C 1.1 1.2 1.0 3.0 10 VZ, NOMINAL ZENER VOLTAGE 80 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 1. Effect of Zener Voltage on Zener Impedance Figure 2. Typical Forward Voltage 1000 IR, LEAKAGE CURRENT (μ A) TA = 25°C C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS 1000 100 10 1.0 0.1 0.01 + 25°C −55°C 0 10 20 30 40 50 60 VZ, NOMINAL ZENER VOLTAGE (V) 70 +150°C 100 10 BIAS AT 50% OF VZ NOM 0.001 0.0001 1.0 4.0 10 VZ, NOMINAL ZENER VOLTAGE (V) 70 0.00001 Figure 3. Typical Capacitance Figure 4. Typical Leakage Current http://onsemi.com 3 MM3Z2V4T1 SERIES TYPICAL CHARACTERISTICS 100 I Z , ZENER CURRENT (mA) TA = 25°C 100 IZ , ZENER CURRENT (mA) TA = 25°C 10 10 1.0 1 0.1 0.1 0.01 0.01 0 2.0 4.0 6.0 8.0 VZ, ZENER VOLTAGE (V) 10 12 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 5. Zener Voltage versus Zener Current (VZ Up to 12 V) Figure 6. Zener Voltage versus Zener Current (12 V to 75 V) 100 80 POWER DISSIPATION (%) 60 40 20 0 0 25 50 75 100 TEMPERATURE (°C) 125 150 Figure 7. Steady State Power Derating http://onsemi.com 4 MM3Z2V4T1 SERIES PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G HE D b 1 2 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 A3 A L NOTE 5 MIN 0.031 0.000 C NOTE 3 A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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