MM3Z33VT1G

DATA SHEET www.onsemi.com Zener Voltage Regulators 300 mW SOD−323 Surface Mount MM3ZxxxT1G Series, SZMM3ZxxxT1G Series SOD−323 CASE 477 STYLE 1 This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 300 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. 1 Cathode 2 Anode MARKING DIAGRAM • Standard Zener Breakdown Voltage Range − 2.4 V to 75 V • Steady State Power Rating of 300 mW • Small Body Outline Dimensions: • • • • • xx G 0.067” x 0.049” (1.7 mm x 1.25 mm) Low Body Height: 0.035” (0.9 mm) Package Weight: 4.507 mg/Unit ESD Rating of Class 3 (> 16 kV) per Human Body Model SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* Mechanical Characteristics: CASE: Void-free, Transfer-Molded Plastic FINISH: All External Surfaces are Corrosion Resistant MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Plated with Pb−Sn or Sn Only (Pb−Free) POLARITY: Cathode Indicated by Polarity Band FLAMMABILITY RATING: UL 94 V−0 MOUNTING POSITION: Any Total Device Dissipation FR−4 Board, (Note 1) @ TA = 25°C Derate above 25°C G xx = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MM3ZxxxT1G, SZMM3ZxxxT1G SOD−323 (Pb−Free) 3,000 / Tape & Reel MM3ZxxxT3G, SZMM3ZxxxT3G SOD−323 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION MAXIMUM RATINGS Rating M Specification Features: Symbol PD Max Unit 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 416 °C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 December, 2021 − Rev. 13 1 Publication Order Number: MM3Z2V4T1/D MM3ZxxxT1G Series, SZMM3ZxxxT1G Series ELECTRICAL CHARACTERISTICS Symbol I Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF QVZ C IF VZ VR V IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @VR = 0 and f = 1 MHz ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Zener Voltage (Note 2) VZ (Volts) @ IZT Zener Impedance ZZT @ IZT Device Marking Min Nom Max mA W MM3Z2V4T1G MM3Z2V7T1G MM3Z3V0T1G MM3Z3V3T1G MM3Z3V6T1G 00 01 02 05 06 2.2 2.5 2.8 3.1 3.4 2.4 2.7 3.0 3.3 3.6 2.6 2.9 3.2 3.5 3.8 5 5 5 5 5 MM3Z3V9T1G MM3Z4V3T1G MM3Z4V7T1G MM3Z5V1T1G MM3Z5V6T1G 07 08 09 0A 0C 3.7 4.0 4.4 4.8 5.2 3.9 4.3 4.7 5.1 5.6 4.1 4.6 5.0 5.4 6.0 MM3Z6V2T1G MM3Z6V8T1G MM3Z7V5T1G MM3Z8V2T1G MM3Z9V1T1G 0E 0F 0G 0H 0K 5.8 6.4 7.0 7.7 8.5 6.2 6.8 7.5 8.2 9.1 MM3Z10VT1G MM3Z11VT1G MM3Z12VT1G MM3Z13VT1G MM3Z15VT1G 0L 0M 0N 0P 0T 9.4 10.4 11.4 12.4 14.3 MM3Z16VT1G MM3Z18VT1G MM3Z20VT1G MM3Z22VT1G MM3Z24VT1G 0U 0W 0Z 10 11 MM3Z27VT1G MM3Z30VT1G MM3Z33VT1G MM3Z36VT1G MM3Z39VT1G Leakage Current ZZK @ IZK IR @ VR C @ VR = 0 f = 1 MHz QVZ (mV/k) @ IZT W mA mA Volts Min Max pF 100 100 100 95 90 1000 1000 1000 1000 1000 0.5 0.5 0.5 0.5 0.5 50 20 10 5 5 1.0 1.0 1.0 1.0 1.0 −3.5 −3.5 −3.5 −3.5 −3.5 0 0 0 0 0 450 450 450 450 450 5 5 5 5 5 90 90 80 60 40 1000 1000 800 500 200 0.5 0.5 0.5 0.5 0.5 3 3 3 2 1 1.0 1.0 2.0 2.0 2.0 −3.5 −3.5 −3.5 −2.7 −2.0 −2.5 0 0.2 1.2 2.5 450 450 260 225 200 6.6 7.2 7.9 8.7 9.6 5 5 5 5 5 10 15 15 15 15 100 160 160 160 160 0.5 0.5 0.5 0.5 0.5 3 2 1 0.7 0.2 4.0 4.0 5.0 5.0 7.0 0.4 1.2 2.5 3.2 3.8 3.7 4.5 5.3 6.2 7.0 185 155 140 135 130 10 11 12 13.25 15 10.6 11.6 12.7 14.1 15.8 5 5 5 5 5 20 20 25 30 30 160 160 80 80 80 0.5 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.05 8.0 8.0 8.0 8.0 10.5 4.5 5.4 6.0 7.0 9.2 8.0 9.0 10 11 13 130 130 130 120 110 15.3 16.8 18.8 20.8 22.8 16.2 18 20 22 24.2 17.1 19.1 21.2 23.3 25.6 5 5 5 5 5 40 45 55 55 70 80 80 100 100 120 0.5 0.5 0.5 0.5 0.5 0.05 0.05 0.05 0.05 0.05 11.2 12.6 14.0 15.4 16.8 10.4 12.4 14.4 16.4 18.4 14 16 18 20 22 105 100 85 85 80 12 14 18 19 20 25.1 28 31 34 37 27 30 33 36 39 28.9 32 35 38 41 2 2 2 2 2 80 80 80 90 130 300 300 300 500 500 0.5 0.5 0.5 0.5 0.5 0.05 0.05 0.05 0.05 0.05 18.9 21.0 23.2 25.2 27.3 21.4 24.4 27.4 30.4 33.4 25.3 29.4 33.4 37.4 41.2 70 70 70 70 45 MM3Z43VT1G MM3Z47VT1G MM3Z51VT1G MM3Z56VT1G 21 1A 1C 1D 40 44 48 52 43 47 51 56 46 50 54 60 2 2 2 2 150 170 180 200 500 500 500 500 0.5 0.5 0.5 0.5 0.05 0.05 0.05 0.05 30.1 32.9 35.7 39.2 37.6 42.0 46.6 52.2 46.6 51.8 57.2 63.8 40 40 40 40 MM3Z62VT1G MM3Z68VT1G MM3Z75VT1G 2A 1F 1G 58 64 70 62 68 75 66 72 79 2 2 2 215 240 255 500 500 500 0.5 0.5 0.5 0.05 0.05 0.05 43.4 47.6 52.5 58.9 65.6 73.4 71.8 79.8 88.6 35 35 35 Device* *Includes SZ-prefix devices where applicable. 2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. www.onsemi.com 2 MM3ZxxxT1G Series, SZMM3ZxxxT1G Series TYPICAL CHARACTERISTICS 1000 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT , DYNAMIC IMPEDANCE ( Ω ) 1000 100 100 IZ = 1 mA 5 mA 10 1.0 3.0 10 VZ, NOMINAL ZENER VOLTAGE 75°C 1.0 80 150°C 10 0.4 Figure 1. Effect of Zener Voltage on Zener Impedance IR, LEAKAGE CURRENT ( μ A) C, CAPACITANCE (pF) 0 V BIAS 100 1 V BIAS BIAS AT 50% OF VZ NOM 10 1.1 1.2 4.0 10 VZ, NOMINAL ZENER VOLTAGE (V) 70 100 10 1.0 +150°C 0.1 0.01 0.001 + 25°C 0.0001 −55°C 0.00001 0 Figure 3. Typical Capacitance 100 10 1.0 0.1 2.0 4.0 6.0 8.0 VZ, ZENER VOLTAGE (V) 20 30 40 50 60 VZ, NOMINAL ZENER VOLTAGE (V) 100 TA = 25°C 0 10 70 Figure 4. Typical Leakage Current IZ , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) 1000 TA = 25°C 0.01 0°C Figure 2. Typical Forward Voltage 1000 1.0 0.5 25°C 10 12 TA = 25°C 10 1 0.1 0.01 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 6. Zener Voltage versus Zener Current (12 V to 75 V) Figure 5. Zener Voltage versus Zener Current (VZ Up to 12 V) www.onsemi.com 3 MM3ZxxxT1G Series, SZMM3ZxxxT1G Series TYPICAL CHARACTERISTICS 100 POWER DISSIPATION (%) 80 60 40 20 0 0 25 50 75 100 TEMPERATURE (°C) 125 Figure 7. Steady State Power Derating www.onsemi.com 4 150 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 1 STYLE 1 SOD−323 CASE 477−02 ISSUE H 2 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E A3 A C NOTE 3 DATE 13 MAR 2007 1 STYLE 2 L A1 NOTE 5 MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* XX M 0.63 0.025 STYLE 1 0.83 0.033 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASB17533C SOD−323 STYLE 2 XX = Specific Device Code M = Date Code 1.60 0.063 DOCUMENT NUMBER: XX M STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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